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    ATC100A3R9BW Price and Stock

    American Technical Ceramics Corp ATC100A3R9BW150XT

    CAP,CERAMIC,3.9PF,150VDC,.1-PF TOL,.1+PF TOL,90PPM-TC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A3R9BW150XT 121
    • 1 $3.15
    • 10 $3.15
    • 100 $2.1
    • 1000 $1.9425
    • 10000 $1.9425
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    ATC100A3R9BW150XT 121
    • 1 $3.15
    • 10 $3.15
    • 100 $2.1
    • 1000 $1.9425
    • 10000 $1.9425
    		Buy Now

    American Technical Ceramics Corp ATC100A3R9BW150X

    CAPACITOR, CERAMIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A3R9BW150X 40
    • 1 $2.744
    • 10 $2.058
    • 100 $1.715
    • 1000 $1.715
    • 10000 $1.715
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    ATC100A3R9BW150X 40
    • 1 $2.744
    • 10 $2.058
    • 100 $1.715
    • 1000 $1.715
    • 10000 $1.715
    		Buy Now

    Kyocera AVX Components 100A3R9BW150XT

    Silicon RF Capacitors / Thin Film 150volts 3.9pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100A3R9BW150XT Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.53
    • 10000 $3.53
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    Kyocera AVX Components 100A3R9BW150XTV

    Silicon RF Capacitors / Thin Film 150V 3.9pF Tol 0.1pF Las Mkg Vertical
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100A3R9BW150XTV Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.45
    • 10000 $2.45
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    ATC100A3R9BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A

    ATC100A100JW

    Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150

    diode R17 SMA

    Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB
    Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


    Original     		PDF MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB