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    Kyocera AVX Components 100B220GT500XT

    Silicon RF Capacitors / Thin Film 500volts 22pF 2%
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    marking WB1 sot-23

    Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		MRF9080 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		MRF9080 MRF9080LR3 PDF

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source


    Original     		MRF9080LR3 MRF9080 marking WB1 sot-23 marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT PDF