C109 ceramic capacitor
Abstract: TL235
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
H-34275G-6/2
C109 ceramic capacitor
TL235
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ATC100B6R2CT500X
Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110
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PTFB213208FV
PTFB213208SV
320-watt
PTFB213208FV
H-34275G-6/2
ATC100B6R2CT500X
TL230
TL235
TL156
TL247
C20210
ATC100B100FW500X
TL140
TL251
TL126
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AN1955
Abstract: ATC100B9R1CT500XT MRF5S19130H MRF5S19130HSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H - 2 Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HSR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19130H
MRF5S19130HSR3
AN1955
ATC100B9R1CT500XT
MRF5S19130HSR3
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ATC100B4R3CW500X
Abstract: PTVA035002EV V1
Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down
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PTVA035002EV
PTVA035002EV
a035002
ATC100B4R3CW500X
PTVA035002EV V1
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rf35
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S7235N
MRF8S7235NR3
rf35
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ATC100B9R1CT500XT
Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 ATC100B6R2CT500X
Text: Document Number: MRF5S19130H - 1 Rev. 3, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19130HR3 LIFETIME BUY Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19130H
MRF5S19130HR3
ATC100B9R1CT500XT
465B
AN1955
MRF5S19130HR3
ATC100B6R2CT500X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8S7235N
MRF8S7235NR3
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