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Kyocera AVX Components 600F1R0BT250XT Silicon RF Capacitors / Thin Film 250volts 1pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F1R0BT250XT		28,088			1 $1.46 10 $0.911 100 $0.627 1000 $0.488 10000 $0.4	Buy Now
Kyocera AVX Components 600F1R0BT250XT/500P REEL Silicon RF Capacitors / Thin Film 250volts 1pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600F1R0BT250XT/500P REEL	Reel	500		500	1 - 10 - 100 - 1000 $0.463 10000 $0.341	Buy Now

ATC600F1R0BT250XT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6	PDF
ATC100A101JP150 Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 DataMRFG35010AN ATC100A101JP150 GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14	PDF
ON SEMICONDUCTOR J122 Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122	PDF
MMG3014N Abstract: No abstract text available Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup	Original	MMG3014N MMG3014N	PDF
GRM31CR61H225KA88L Abstract: j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050GNR1 MD7IC2050NBR1 MD7IC2050NR1 A114 Text: Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage	Original	MD7IC2050N MD7IC2050N MD7IC205ubsidiaries, MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GRM31CR61H225KA88L j692 AN1955 AN1977 AN1987 JESD22 MD7IC2050NBR1 A114	PDF
C4532X7RIH685K Abstract: ATC600F1R0BT250XT AN1955 J373 Text: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6 C4532X7RIH685K ATC600F1R0BT250XT AN1955 J373	PDF
ATC600S10 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WHR3 ATC600S10	PDF
j295 Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606 Text: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage	Original	MD7IC2012N MD7IC2012NR1 MD7IC2012GNR1 j295 SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606	PDF
Untitled Abstract: No abstract text available Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage	Original	MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3	PDF
ATC600S2R7BT250XT Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth	Original	MRF8P20165WH MRF8P20165WHR3 MRF8P20165WHSR3 MRF8P20165WH ATC600S2R7BT250XT ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT	PDF
T491C106K050AT Abstract: ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT ATC600F1R0BT250XT Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6S9201H	PDF
T491C106K050AT Abstract: A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 ATC600F4R7BT250XT Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9201H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9201HR3 MRFE6S9201HSR3 Designed for broadband commercial and industrial applications with	Original	MRFE6S9201H MRFE6S9201HR3 MRFE6S9201HSR3 MRFE6S9201HR3 T491C106K050AT A114 A115 AN1955 C101 JESD22 MRFE6S9201H MRFE6S9201HSR3 ATC600F4R7BT250XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage	Original	MD7IC18120N MD7IC18120N/GN MD7IC18120NR1 MD7IC18120GNR1	PDF

RO4350B Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 500ating 8/2013Semiconductor, RO4350B	PDF
J350 Abstract: J449 ATC600F101JT250XT ATC600F0R5BT250XT SG732AT MD7IC AN1977 AN1987 ATC600F101 gsc3 Text: Freescale Semiconductor Technical Data Document Number: MD7IC18120N Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1880 MHz. This multi-stage	Original	MD7IC18120N MD7IC18120N/GN MD7IC18120NR1 MD7IC18120GNR1 J350 J449 ATC600F101JT250XT ATC600F0R5BT250XT SG732AT MD7IC AN1977 AN1987 ATC600F101 gsc3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8HP21130H 14mployees, MRF8HP21130HR3 MRF8HP21130HSR3	PDF
GSC351-HYB1900 Abstract: J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin MD7IC2050GNR1 Text: Document Number: MD7IC2050N Rev. 1, 5/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on- chip matching that makes it usable from 1750- 2050 MHz. This multi- stage	Original	MD7IC2050N MD7IC2050N MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 GSC351-HYB1900 J3328 GRM31CR61H225K j692 J3027 AN1955 AN1977 AN1987 Soshin	PDF