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Kyocera AVX Components 600F241JT250XT/500 Silicon RF Capacitors / Thin Film 250volts 240pF 5% NP0
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TTI	600F241JT250XT/500	Reel	10,500		500	1 - 10 - 100 - 1000 $0.75 10000 $0.62	Buy Now

ATC600F241JT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1	PDF
ATC600F241JT250XT Abstract: GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT AFT09MS031NR1 inductor 50 NH GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 1, 8/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of	Original	AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 13ogo, 8/2012Semiconductor, ATC600F241JT250XT GRM31CR61H106KA12L ATC100A220JT150XT ATC600F220JT250XT inductor 50 NH GRM31CR61H106KA12	PDF
AFT09MS031NR1 Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of	Original	AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1	PDF
atc 17-25 Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	MMRF1021N MMRF1021NT1	PDF
A5M06 Abstract: Transistor Z17 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M06 Transistor Z17	PDF
ATC600F470BT250XT Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor	PDF
Z6 3pin Abstract: J262 AFT09MS007NT1 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1	PDF
ATC600F241JT Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12	PDF
A5M0 Abstract: IC 2 5/A5M06 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT05MS006N AFT05MS006NT1 A5M0 IC 2 5/A5M06	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF