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    ATR80 Search Results

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    ATR80 Price and Stock

    Same Sky CUSA-TR80-15-2000-TH

    TRANCEIVER, 80 DEGREE BEAM ANGLE
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    DigiKey CUSA-TR80-15-2000-TH Tray 536 1
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    Mouser Electronics CUSA-TR80-15-2000-TH 477
    • 1 $3.24
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    Neutron USA CUSA-TR80-15-2000-TH
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    Same Sky CUSA-TR80-18-2400-TH

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    DigiKey CUSA-TR80-18-2400-TH Tray 436 1
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    Mouser Electronics CUSA-TR80-18-2400-TH 289
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    Master Electronics CUSA-TR80-18-2400-TH 250
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    Neutron USA CUSA-TR80-18-2400-TH
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    Same Sky CUSA-TR80-065-2000-TH68

    ULTRASONIC TRANSCEIVER ALUMINUM
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    DigiKey CUSA-TR80-065-2000-TH68 Tray 428 1
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    Mouser Electronics CUSA-TR80-065-2000-TH68 854
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    Same Sky CUSA-TR801-065-2000-TH68

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    DigiKey CUSA-TR801-065-2000-TH68 Tray 339 1
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    Mouser Electronics CUSA-TR801-065-2000-TH68 489
    • 1 $6.63
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    Allegro MicroSystems LLC ACS720KLATR-80AB-T

    HIGH ACCURACY DUAL FAULT OUTPUT
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    DigiKey ACS720KLATR-80AB-T Reel 6,000
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    Mouser Electronics ACS720KLATR-80AB-T
    • 1 $5.75
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    ATR80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S1-A13

    Abstract: foxconn compal ATR-80 Socket AM2 Compal Electronics NVIDIA schematics la-1611 Intel 845PE foxconn mPGA478
    Text: A B C D E 1 1 Manchester 200Z LA-1731 REV 1.0 Schematics Document 2 2 Intel Pentium 4 Processor it the 478-pin Package with 845PE / ICH4 chipset 3 3 4 4 Title Compal Electronics, Ltd. Cover Sheet Size B D ate: A B C D Document Number R ev 1.0 LA1731 ¬P 期二, 十二月 31, 2002


    Original
    PDF LA-1731 478-pin 845PE LA1731 LA-1731 W320-04 ATR80 S1-A13 foxconn compal ATR-80 Socket AM2 Compal Electronics NVIDIA schematics la-1611 Intel 845PE foxconn mPGA478

    ATP10K100M

    Abstract: 100w1000 Amplifier Research LA250
    Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation


    Original
    PDF 250T1G3, 200T2G8A 250T8G18 January/3500 ATP10K100M 100w1000 Amplifier Research LA250

    mt4c4001

    Abstract: MT4C4001-6 TC51440 20PIN MT4C4001-10 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10
    Text: 235 - 4M CMOS X íiSícffl m % ît £ °C TRAC max (ns) TRCY (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 4) Í TCAD min (ns) 2 0 P I N ¡if. TAH min (ns! TP min (ns) TWCY min (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) I DD max (raA) À I DD STANDBY


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    PDF 20PIN MN424400ASJ/AL/ATT/ATTR-07 IK/128 MN424400ASJ/AL/ATT/ATTR-08 MT4C4001-10 IK/16 TC514402AP/AJ/ASJ-70 TC514402AP/AJ/ASJ-80 mt4c4001 MT4C4001-6 TC51440 MT4C4001-12 MT4C4001-7 MT4C4001-8 MT4C4003-10

    TC5118160AJ

    Abstract: No abstract text available
    Text: TOSHIBA TC5118160AJ/AFT-70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5118160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    PDF TC5118160AJ/AFT-70/80 TC5118160AJ/AFT 002S750 G055751 TC5118160AJ

    ASJ-10

    Abstract: ATR10 ATR80
    Text: - 230C M O S X Ä m £ tt £ CO -f- >• D y y ft tt TRAC max ns TRCY min (ns) TCAD min (ns) TAH min (ns) TP min ¡ns) n C 3 m R A M ( 4 1 9 4 TDH mir (ns) TRWC nin (ns) V D D or V C C (V) 4 X 1 ) Â m M HCÏ min (ns) 3 I DD max (mA) CL O CM 4 M I DD STANDBY


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    PDF IK/16 TC514100AP/AJ/ASJ-80 TC514100MVAJL/ASJL-10 TC514102J/Z-10 IK/16 TC514102J/Z-80 TMS44100-10 ASJ-10 ATR10 ATR80

    tc511000aj

    Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
    Text: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100


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    PDF TC511000AJ/AZ-70 TC511000AJ/AZ-80 TC511000AJ/AZ-10 TC511OOOAJL/AZL-70 TC511000AJL/AZL-80 TC511000AJL/AZL-10 TC511000BJ/BZ/BFT/BTR-60 TC511000BFT/BTR-70 TC511000BFT/BTR-80 TC511000BFT/BTR-10 tc511000aj ATR80 1048576x4 TC511664 tc511665 TC511664BJl

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    514400A

    Abstract: ATR80 514400AZ ATR60
    Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC514400AP/AJ/ASJ-60,-70,-80 TC514400AZ/AFT/ATR-60,-70,-80 TENTATIVE DATA 1,048,576 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The T C 514400A P /A J/A SJ/A Z /A FT /A T R is the new generation dynamic RAM organized 1 ,0 4 8 ,5 7 6


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    PDF TC514400AP/AJ/ASJ-60 TC514400AZ/AFT/ATR-60 14400A 300/350m TC514400AP/AJ/ASJ-60, TC514400AZ/AFT/ATR-60, 514400A ATR80 514400AZ ATR60

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit


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    PDF ----------------TC5116180AJ/AFT-60/70/-80 TC5116180AJ/AFT TC5116180AJ/AFT-60/70/80

    AFT 518

    Abstract: A518 A531 a539 KAS 34
    Text: TOSHIBA TC5116180AJ/AFT-60/70/-80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    PDF TC5116180AJ/AFT-60/70/-80 TC5116180AJ/AFT TC5116180AJ/AFT-60/70/80 AFT 518 A518 A531 a539 KAS 34

    AX. A431

    Abstract: TC5118160A TOSHIBA 5118160 TC5118160AJ 5118160AJ
    Text: TOSHIBA TC511816QAJ/AFT -70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The T C 5118160 AJ/A FT is the new generation dynam ic RAM organized 1,048,576 word by 16 bit. The TC5118160A J/A FT utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit


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    PDF TC511816QAJ/AFT TC5118160A TC511816QAJ/AFT-70/80 rai8160AJ/AFT-70/80 TC5118160AJ/AFT-70/80 AX. A431 TOSHIBA 5118160 TC5118160AJ 5118160AJ