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    Untitled

    Abstract: No abstract text available
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • High Efficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm AW


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    AWC6323 PDF

    6323R

    Abstract: AWc6323 AWC6323RM47P9 AWC6323RM47Q7 directional coupler
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • High Efficiency: 37 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA 3 • Internal Voltage Regulation


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    AWC6323 AWC6323 6323R AWC6323RM47P9 AWC6323RM47Q7 directional coupler PDF

    6323R

    Abstract: No abstract text available
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • High Efficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm AW


    Original
    AWC6323 6323R PDF

    Untitled

    Abstract: No abstract text available
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Ampliier Module Data Sheet - Rev 2.2 FEATURES • InGaP HBT Technology • High Eficiency Cell Band : • 37.5 % @ POUT = +27.6 dBm • 23 % @ POUT = +16 dBm • 11.5 % @ POUT = +10 dBm •


    Original
    AWC6323 PDF

    AWC6323RM47Q7

    Abstract: 6323R AWc6323 AWC6323RM47P9
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • High Efficiency: 38 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA


    Original
    AWC6323 AWC6323 AWC6323RM47Q7 6323R AWC6323RM47P9 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWC6323 HELP3ETM Dual-band Cellular & PCS CDMA 3.4 V Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • High Efficiency: 38 % @ +27.6 dBm 22 % @ +16 dBm 11 % @ +10 dBm AW C 632 • Low Quiescent Current: <4 mA


    Original
    AWC6323 PDF