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    B3 HO TRANSISTOR Search Results

    B3 HO TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    B3 HO TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FSEB30

    Abstract: BFP640
    Text: A pp li c at i on N ot e , R ev . 1 . 2 , J an ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 3 6 L o w C o s t , 3 V ol t , + 1 4 d B m 2 .3 3 G H z S D A R S A c t i v e A nt e n n a 2n d S t a g e L ow N oi s e A m p l i f i e r u s i n g th e I n f i ne o n B F P 6 4 0 S i G e T r a n s i s to r


    Original     		PDF

    ir2101 datasheet

    Abstract: IR2101 IR2101 AN IR2101S MP150 B3 ho transistor
    Text: Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		IR2101 IR2101 EME6300 MP150 MP190 ir2101 datasheet IR2101 AN IR2101S B3 ho transistor PDF

    IR2101

    Abstract: ir2101 datasheet IR2101 AN IR2101S MP150 silicon rectifier data manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		IR2101 IR2101 EME6300 MP150 MP190 ir2101 datasheet IR2101 AN IR2101S silicon rectifier data manual PDF

    gps schematic diagram

    Abstract: BFP740 BFP740F gps lna gps 1575 1575-r amplifier
    Text: A pp li c at io n N o t e, R e v . 1. 3 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 1 7 L o w N o i s e A m p l i fi e r L N A f o r 1 5 7 5 M H z ( G P S ) A p pl i c a t i o n s us i n g t h e U lt r a - L o w N o i s e S i G e : C B FP 7 40 F Tr a ns i s t o r


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    BFP640

    Abstract: gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR
    Text: A p p l i c a t i o n N o t e , R e v . 1 . 2 , A ug us t 2 00 7 A p p li c a t i o n N o t e N o . 1 2 1 L o w N o i s e A m p l i f i e r f o r G P S A p p l i c at i o n s u s i ng B FP 6 40 S i G e T ra n s i s t o r R F & P r o t e c ti o n D e v i c e s


    Original     		BFP640 gps schematic diagram transistor cross reference chart BFP640 noise figure schematic diagram DC amplifier Transistor Cross Reference low noise transistor table SiGe RF TRANSISTOR PDF

    FSEM30

    Abstract: BFR360F TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 0 A 900 MHz Low Noise Amplifier Using the B F R 3 6 0 F T r a n s i s t o r i n T S F P - 3 P ac k a g e R F & P r o t e c ti o n D e v i c e s Edition 2008-02-22


    Original     		BFR360F FSEM30 TSFP-3 transistor A 928 d 882 transistor Transistor Cross Reference transistor cross reference chart PDF

    sdars

    Abstract: network analyzer measure antenna BFP640
    Text: A pp li c at i on N ot e , R ev . 1 . 2 , J an ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 3 7 L o w C o s t , 3 V ol t , + 1 2 . 5 dB m 2 . 3 3 G H z S D A R S A c t i v e A nt e n n a 2n d S t a g e L ow N oi s e A m p l i f i e r u s i n g th e I n f i ne o n B F P 6 4 0 S i G e T r a n s i s to r


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    FSEB30

    Abstract: 1575 GPS BFP640
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 4 L o w - C u r r e nt L o w N o i s e A m p l if i e r L N A f o r 1 5 7 5 M H z G l o b a l P o s i ti o n i n g S a t e l l i te ( G P S ) A p pl i c a t i o n s us i n g t h e S i G e B F P 6 4 0 T r a n s i s t o r


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    digital multimedia broadcasting

    Abstract: dmb transistor BFP640 6723 uhf amplifier design Transistor FSEB30 Satellite power supply schematic diagram SOT343 lna transistor dmb
    Text: A pp li c at io n N o t e, R e v . 1. 2 , N ov e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 3 3 Low Noise Amplifier for Satellite Digital M u l t i m e d i a B r o ad c a s t i n g D M B A p p l i c a t i on s u s i n g th e S i G e B F P 64 0 T r a n s i s t or


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    class h power amplifier schematic

    Abstract: class d amplifier schematic diagram SMC-02 BFP650 Miteq network analyzer measure antenna CLASS D amplifier diagram class g power amplifier schematic sdars
    Text: A pp li c at i on N ot e , R ev . 1. 2 , S e pt e m be r 2 00 7 A p p li c a t i o n N o t e N o . 1 2 3 L o w C o s t 2. 3 3 G H z C l a s s A S D A R S A c t i v e A n te n n a A m p l i f i e r O ut p u t S ta g e u s i n g t h e I n f i ne o n B FP 6 50 S i G e T ra n s i s t o r


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    DTA114EX2

    Abstract: DTA114E DTC114E DTC114EX2 KIY transistors
    Text: Transistors/Surface Mounting Type 73 Digital Transistors with Two Internal Circuits • UMT5 • SMT5 Package Two transistors with internal resistors have been built into the 2125 UMT5 and 2916 (SMT5) packages. Since the circuit architecture is completed internally, no external connections are required, so less space is needed.


    OCR Scan     		UMA10N UMA11N UMG10N UMG11N FMA10A FMA11A DTA124EX2 DTA144EX2 DTA143T DTC143T DTA114EX2 DTA114E DTC114E DTC114EX2 KIY transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^537 GQE'HIS 3 m ^ - 2 P \ - ö 7 SGS-TfiOMSON IILliOTMt» 5 1 s6 s - SGSP201 thomson N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss SGSP201 100 V ^DS on 1.4 0 *D 2.0 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING


    OCR Scan     		SGSP201 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3225 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3225 INDUSTRIAL APPLICATIONS Unit in mm SW ITCHING APPLICTIONS. SOLENOID DRIVE APPLICATIONS. • • High DC Current Gain : l r p E = 500 Min. (Iß = 400mA) Low Saturation Voltage : V qe ( s a t ) = ^-5V (Max.) (Iq = 300mA)


    OCR Scan     		2SC3225 400mA) 300mA) O-92MOD 36gay PDF

    KTA1666

    Abstract: KTC4379 OB2 SOT-89
    Text: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)


    OCR Scan     		KTC4379 KTA1666. KTC4379 250mm 250mm2 KTA1666 OB2 SOT-89 PDF

    A1402

    Abstract: 25CC 2SA1402 T0126
    Text: [~Ordering num ber: EN 1761B 2SA1402/2SC3596 PNP/NPN Epitaxial Planar Silicon Transistors U ltrahigh-D efinition CRT D isplay Video Output A pplications A p p licatio n s •Ultrahigh-definition CRT display. • Video output. • Color TV chroma output. • Wide-band amp.


    OCR Scan     		1761B 2SA1402/2SC3596 700MHz. 2SA1402/2SC3596. 2SA1402 A1402 25CC T0126 PDF

    ERIE CAPACITORS

    Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics


    OCR Scan     		MRF658 ERIE CAPACITORS MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor PDF

    hard disk head preamp

    Abstract: MAGNETIC HEAD impedance Pre amplifier hdd BF transistor series 90 TDA5152X MA4853 HDD Preamplifier MAGNETIC HEAD read amplifier magnetic stripe integrated circuit HDD MAGNETIC HEAD Read Amplifier
    Text: Philips Semiconductors Product specification Pre-amplifier for Hard Disk Drive HDD with MR-read / Inductive write heads TDA5152 FEATURES GENERAL DESCRIPTION • Designed for 10 dual-stripe MR-read/inductive write heads The 5.0 V pre-amplifier for HDD applications has been


    OCR Scan     		TDA5152 amplifier25 7110fl2b 010724fl hard disk head preamp MAGNETIC HEAD impedance Pre amplifier hdd BF transistor series 90 TDA5152X MA4853 HDD Preamplifier MAGNETIC HEAD read amplifier magnetic stripe integrated circuit HDD MAGNETIC HEAD Read Amplifier PDF

    harris 8 lead cerdip DIMENSIONS

    Abstract: No abstract text available
    Text: HFA3127/883 HARRIS S E M I C O N D U C T O R Ultra High Frequency Transistor Array February 1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    OCR Scan     		HFA3127/883 HFA3127/883 1-800-4-HARRIS harris 8 lead cerdip DIMENSIONS PDF

    BLW40

    Abstract: MCD205 TLO 721
    Text: Philips Sem iconductors I 7 1 1 DS2 b 0 0 t>3232 3 bS ^BPHIN PHILIPS INTERNATIONAL VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. Product specification


    OCR Scan     		711065b 00b3535 BLW40 OT120 PINNING-SOT120 BLW40 MCD205 TLO 721 PDF

    b050 TRANSISTOR

    Abstract: bipolar transistor ghz s-parameter 7.1 power amplifier circuit diagram BFG10 Transistor BC817 power amplifier circuit diagram at c15 100 3p9 amplifier TRANSISTOR 12 GHZ BC817 BFG11
    Text: Philips Semiconductors Power amplifier for 1.9 GHz at 3 V Application report In this note some results of measurements are described performed on a RF amplifier for 1.9GHz applications. The amplifier is build up from three bipolar transistors, the broadband


    OCR Scan     		BFG540/X BFG10/X BFG11/X. BFG540, BFG10 BFG11 26dBm, 1900MHz. BFG505 b050 TRANSISTOR bipolar transistor ghz s-parameter 7.1 power amplifier circuit diagram Transistor BC817 power amplifier circuit diagram at c15 100 3p9 amplifier TRANSISTOR 12 GHZ BC817 PDF

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SH EET ISSU E B - JU L Y 1997 FEATURES * C o m p a ct package * L o w on state losses * L o w d rive re q u ire m e n ts * O perates up to 20V s u p p ly * 2.5 A m p c o n tin u o u s ratin g PARTM ARKING DETAIL - Z H B 6718


    OCR Scan     		ZHB6718 PDF

    2n4080

    Abstract: 2N4260 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad
    Text: RAYTHEON/ 57 SEMICONDUCTOR SMALL SIGNAL TRANSISTORS p r o d u c t s p e c ific a tio n s 7597360 R AY THEON CO» 27C Ultra High Speed Logic Switches •raytheonI GV 75T?3t,0 □ □ 0 3 5 5 e] 1 PNP 03559 D J - 37- / 3 Popular Types Description Ultra high speed Silicon epitaxial


    OCR Scan     		2N4260 2N4261/JAN 2N4957/JAN 2N4261J 2N4957J 10Oil 0003St 050BSC 100BSC 54BSC 2n4080 2N4957 JAN JAN2N4957 2N4261 JAN raytheon npn raytheon emitter pad PDF

    DIODE ku 1490

    Abstract: k 246 transistor 1.4901 bd135 equivalent
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM


    OCR Scan     		MRF15090/D DIODE ku 1490 k 246 transistor 1.4901 bd135 equivalent PDF