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diode RN 1220 Abstract: NDT455N diode 561 Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS	OCR Scan	PDF	NDT455N OT-223 LSD113D 00401EÃ diode RN 1220 NDT455N diode 561
2N6427 Abstract: MMBT6427 MPSA14 Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from	OCR Scan	PDF	2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427
2NS087 Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581 Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.	OCR Scan	PDF	2N5086 2N5087 MMBT5086 MMBT5087 OT-23 b501130 bSD113D 2NS087 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5087 MMBT5087 T092 0013581
DM3000 Abstract: NDM3000 SOIC-16 spindle motor control q406 Text: Nationa l f i Semiconductor May 1996 " N D M 3000 3 Phase Brush less M otor Driver G en eral D escription Features The NDM3000 three phase brushless m otor driver consists o f three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using National's proprietary,	OCR Scan	PDF	NDM3000 NDM3000 b50113G DM3000 SOIC-16 spindle motor control q406
transistor t04 76 Abstract: GV 475 diode transistor T04 NDB6060 004027S Text: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDP6060/NDB6060 025ft b50113G 0DMQ27H bS01130 004027S transistor t04 76 GV 475 diode transistor T04 NDB6060
56 pF CH Abstract: NDS8858H cft 455 f Text: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very	OCR Scan	PDF	NDS8858H LSD113Ã 56 pF CH NDS8858H cft 455 f
SOT23 B2X Abstract: BZX84-C27 BZXB4 b2x84 bzx84c BZX84C10 bzx84c18 BZX84C33 BZX84-C BZX84C33-V Text: 4V7 - BZX84C 33 Series BZX84C e? Discrete POWER & Signal Technologies National Semiconductor' BZX84C 4V7 - BZX84C 33 Series Zeners Tolerance: C = 5% Absolute Maximum Ratings* T A = 25°C unless otherwise noted Parameter Value Units + 150 °c °c Total Device Dissipation	OCR Scan	PDF	BZX84C BZX84C OT-23 bS01130 SOT23 B2X BZX84-C27 BZXB4 b2x84 BZX84C10 bzx84c18 BZX84C33 BZX84-C BZX84C33-V
6c2 diode Abstract: NDH8436 Text: e i Na t i o n a l Semiconductor" May 1996 NDH8436 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.	OCR Scan	PDF	NDH8436 bS01130 6c2 diode