Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B5D113D Search Results

    B5D113D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4740A

    Abstract: 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a 1N4729A 1N4730A
    Text: bar DO-41 1 Watt Zener Diodes Vi Volts Tolerance 5% lit (m A) D • b5D113D 003T513 757 « N S C S DO-41 1.3 Watt Zener Diodes n a t l s e p i i c o n d ( D I S C R E T E ) Zz (Ö ) •r (MÄ) (Volts) Tolerance 5% (mA) Zz m Ir (HA) 3.3 1N4728A 76 10 100


    OCR Scan     		PDF DO-41 b5D113D 1N4728A BZX85C3V3 1N4729A BZX85C3V6 1N4730A BZX85C3V9 1N4731A 1N4740A 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a

    BAV99

    Abstract: BAW56 sot23 baw56 t22 sot23
    Text: S e m ic o n d u c t o r BAW56 tß Discrete POW ER & Signal Technologies National BAW56 CONNECTION DIAGRAMS JH A1 HI SOT-23 ET High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 2 5'C unless otherwise noted


    OCR Scan     		PDF OT-23 BAW56 BAV99 bS0113D 0040S5S BAW56 sot23 baw56 t22 sot23

    PN4258

    Abstract: process 65
    Text: PN4258 I MMBT4258 t? D iscrete POW ER & S ig n a l Technologies National Semiconductor'" MMBT4258 PN4258 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings*


    OCR Scan     		PDF PN4258 MMBT4258 PN4258 D040b process 65

    T3D diode

    Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
    Text: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT451N b501130 T3D diode T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30

    B5G1

    Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		PDF NDP605A/NDP605B, NDP606A/NDP606B 0-1B0-534 B5G1 ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41

    Untitled

    Abstract: No abstract text available
    Text: BSS64 Discrete POWER & Signal Technologies National m y y S e m i c o n d u c t o r “ BSS64 Mark: U3 NPN General Pupose Amplifier This device is designed far general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.


    OCR Scan     		PDF BSS64 bS01130 bSD113G G04Cm4 b5D113D 04CH15

    DIODE 5H

    Abstract: mmbd1201 fw sot-23 5H MARKING BD4148 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE Diode Marking 1p SOT-23
    Text: MMBD4148 I SE I CC I CA i Discrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r M M B D 4148 / SE / CC / CA FI r CONNECTION DIAGRAMS 5H TU ET M M B D 4148 M M B D 4148C C 5H Dò M M B D 4148C A M M B D 4148S E -V t + * t +* 1 D6 D4


    OCR Scan     		PDF MMBD4148 OT-23 MMBD4148CA MMBD4148CC MMBD4148SE 414SSE 414SCC 4141C MMBD1201-1205 DIODE 5H mmbd1201 fw sot-23 5H MARKING BD4148 Diode Marking 1p SOT-23