Untitled
Abstract: No abstract text available
Text: O K I SEMICONDUCTOR GROUP 23E D b724540 0007^74 1 r 1.3/*m Laser Diode - T —47 —0 7 mïÿws&M 0L301A, 0L303A •s / ‘’ ’i w»' ’ ’V".?V • DESCRIPTION OKI OL301A, OL3Û3A are 1.3jum InGaAsP/lnP laser diodes developed as light sources for fiber-optic
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b724540
0L301A,
0L303A
OL301A,
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AC power SAVING CIRCUIT DIAGRAM
Abstract: MSM7508B MSM7509B MSM7541 MSM7542
Text: O K I Semiconductor MSM754177542 Single Rail CODEC GEN ERA L DESCRIPTION T he MSM7541 a n d MSM7542 a re single-channel CODEC CM O S IC s for voice sig n als ra n g in g from 300 to 3400 H z. T hese devices contain filters for A /D a n d D /A conversion. D esigned especially for a sing le-p o w er su p p ly a n d lo w -p o w er ap p licatio n s, th ese devices are
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MSM7541/MSM7542
MSM7541
MSM7542
MSM7508B
MSM7509B.
b724240
AC power SAVING CIRCUIT DIAGRAM
MSM7509B
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oki old122
Abstract: OLD122 OLD122C
Text: OKI electronic components OLP1 2 2 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO18 metal case. Its light emission wave peaks at940 nm. Because of its sharp directivity, multiple units
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OLD122_
OLD122
at940
940nm
b72424G
OLD122
Ifm/100
b724540
oki old122
OLD122C
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MSM64162-XXX
Abstract: MSM64162 sis 496 Ml17
Text: O K I Semiconductor M S M 6 4 1 6 2 _ Built-in RC Oscillator type A/D Converter and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 64162 is a low pow er 4-bit m icrocontroller using O K I original C P U core n X -4 /2 0 . The M SM 64162 has the m inim u m instruction execution tim e o f 7.5 |is @ 400 kH z and has
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MSM64162_
MSM64162
nX-4/20.
2016-byte
128-nibble
MSM64162
b7e4E40
MSM64162-XXX
sis 496
Ml17
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MSM64153A
Abstract: MSM64P155 SEG23
Text: O K I Semiconductor MSM6 4 153A/6 4 153AL Built-in Melody Circuit and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64153A 1.5 V /64153A L (3.0 V) is a 4-bit microcontroller that incorporates an nX-4/20 CPU core. The MSM64153A family offers a built-in 160-nibble data memory, 3-Kbyte program
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MSM64153A
MSM64153AL
MSM64153A
/64153A
nX-4/20
160-nibble
B724240
MSM64153A/64153AL
MSM64P155
SEG23
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AA 170 circit diagram
Abstract: 256KX16 MSM5416256 ucas zip
Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY
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MSM5416256/MSM54V16256
MSM5416256
256KX16
MSM54
DQ8-15
b72M2M0
b7S424D
AA 170 circit diagram
MSM5416256 ucas zip
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Piezo sounder
Abstract: TONE/VOLUME CONTROL CIRCUIT MSM6895 MSM7502 MSM7502GS-BK MSM7543 RM01
Text: O K I Semiconductor MSM7502 Multi-Function PCM CODEC G E N E R A L D E S C R IP T IO N The M SM 7502, developed especially for low -pow er and m ulti-function applications in touch tone telephone sets and digital telephone term inals o f digital PBXs, is a single +5 V pow er supply
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MSM7502_
MSM7502,
MSM7543
MSM7502
Piezo sounder
TONE/VOLUME CONTROL CIRCUIT
MSM6895
MSM7502GS-BK
RM01
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001472
Abstract: No abstract text available
Text: Sfl E D • b7EMEM0 001M712 446 MOKIJ -S 2 / M 5 -Æ O K I MSC7125-XX ? SEMI CONDUCTOR GROUP 5 x 7 DOT MATRIX, 8-DIGIT GENERAL DESCRIPTION The MSC7125-xx is a Bi-CMOS dot matrix display controller for vacuum fluorescent display tube. The MSC7125-xx drives displays with up to
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b7EME40
MSC7125-XX
MSC7125-xx
16-bit
SEG36-40
SEG1-35
001472
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mx232
Abstract: YS2 100 a 741 j
Text: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs
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b724E4Q
MSC2328A-XX
MSM514256AJS)
MSM514256A
RAM-MSC2328A-XXYS2/KS2"
T-46-23-17
RAM-MSC2328A-XX
mx232
YS2 100
a 741 j
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transistor a7g
Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Text: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.
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MSM514101_
304-Word
MSM514101
26-pin
20-pin
18-pin
--MSM514101.
transistor a7g
a105g
MSM temperature spec
til 31a
MSM514101-10
MSM514101-70
MSM514101-80
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oki m6688
Abstract: M6688 SHARP IC 701 I X11 voice activated recorder circuit evo cn GP 502 op amp ua 743 VOICE REC playback VOICE RECORDER and playback IC MSM6595 MSM6688
Text: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The M S M 6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a m icrophone, a speaker, a speaker drive am plifier, and dedicated DRAM through the
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MSM6688
MSM6688
MSM6791
M6688
XXX-96Q9INSIAI
XXX-96S9IAISIAI
b72424D
oki m6688
M6688
SHARP IC 701 I X11
voice activated recorder circuit
evo cn GP 502
op amp ua 743
VOICE REC playback
VOICE RECORDER and playback IC
MSM6595
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of
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MSM7503
MSM7503
MSM7502.
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Untitled
Abstract: No abstract text available
Text: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.
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MSMS6V16400
152-word
4096cycles/64m$
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23108B/BL-XXDS2 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23108B/BL-xxDS2 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs in SOJ MSM514400B/BL packages mounted
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MSC23108B/BL-XXDS2
576-Word
SC23108B/BL-xxDS2
MSM514400B/BL)
30-pin
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R2h DIODE
Abstract: CCDs Charge Coupled Devices images of 74107 photo diode array amplifier OPA256C-1 A2LB
Text: O K I electronic components OPA256C-1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset
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OPA256C-1
OPA256C-1
256-bit,
b72424rd
b724540
b72424G
R2h DIODE
CCDs Charge Coupled Devices
images of 74107
photo diode array amplifier
A2LB
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514265B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE D ESC R IP T IO N T h e M SM 5 1 4 2 6 5 B/BSL is a n e w generation D yn am ic R A M org an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 4 2 6 5 B/BSL is O K I's C M O S silico n gate process
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MSM514265B/BSL
144-Word
16-Bit
MSM514265B/BSL
cycles/128ms
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HS-757
Abstract: SHARP IC 701 I X11 hs 757 sami csi
Text: OKI Semiconductor MSM6688 ADPCM SOLID-STATE RECORDER LSI • GENERAL DESCRIPTION The MSM6688 is a “solid-state-recorder” LSI developed using the ADPCM method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM through the
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MSM6688
MSM6688
MSM6791
096MHz
HS-757
SHARP IC 701 I X11
hs 757
sami csi
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Untitled
Abstract: No abstract text available
Text: O K I O SEMICONDUCTOR GROUP K I s e m MSM5248 ic o S3E D n d u • c t o b7SMH4Q 000 3734 b r " P 7 7 - I3 _ 48K BIT ROM ADPCM VOICE SYNTHESIZER _ GENERAL DESCRIPTION The MSM5248 Is an ADPCM voice synthesizer LSI using the CMOS technology process. Its internal
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MSM5248
MSM5248
10-bit
MSM5248-04
OP-10,
OP-12
OP-14
MSM5248-05
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Untitled
Abstract: No abstract text available
Text: OKI electronic components OP125_ InGaAs PIN Photodiode for Optical Communications GENERAL DESCRIPTION The OD125 is designed as a receiver AMP for 30-Mbit digital signals. It features a PIN photodiode and AMP built into a TO-18 metal package. FEATURES
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OP125_
OD125
30-Mbit
30MHz
1300nm
b7E424G
0G1AT37
OD125
b724540
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514100C/CL 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514100C /C L is a 4 , 1 9 4 ,3 0 4 -w o r d * 1-bit dynam ic RAM fabricated in OKI's C M O S silicon gate technology. The M SM 514100C /C L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single m etal CM O S. The M SM 514100C /C L is
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MSM514100C/CL
304-Word
514100C
leina26/20-p
J/20-p
r26/20-p
514100CL
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17170is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI'sCMOS silicon gate technology. The MSM51V17170 achieves high integration, high-speed operation, and low-power
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MSM51V17170
576-Word
16-Bit
TheMSM51
V17170is
MSM51V17170
42-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V I6100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
MSM51V
I6100
cycles/64ms
b724240
001035b
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Bv 42 transistor
Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.
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MSM5117190
576-Word
18-Bit
MSM5117190
cycles/32ms
Bv 42 transistor
tsop50
42-PIN
MSM5117190-70
MSM5117190-80
SOJ42-P-400
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23S136B/BL-XXBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23S136B/BL -xxBS12/D S12 is a fully decoded 1,048,576-word x 36-bit CM OS dynamic Ran dom Access Memory module com posed of eight 4-Mb DRAMs in SOJ M SM 514400B/BL packages and
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MSC23S136B/BL-XXBS12/DS12
576-Word
36-Bit
MSC23S136B/BL-xxBS12/DS12
MSM514400B/BL)
MSM511000B/BL)
72-pin
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