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BA142 Abstract: No abstract text available Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142
BA157B Abstract: No abstract text available Text: BA157-BA159 Fast Recovery Rectifiers VOLTAGE RANGE: 400 - 1000 V CURRENT: 1.0 A DO - 41 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents	Original	PDF	BA157-BA159 DO-41 BA157 TJ-25 BA157B
SBLF10100CT Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510 Text: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V	Original	PDF	SZQ50A24L3 SZQ50A28L3 SZQ50A34L3 SZQ50A38L3 SZQ50K24L3 SZQ50K28L3 SZQ50K34L3 SZQ50K38L3 SBLF10100CT SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
2cn4d Abstract: RH1Z DO41 2CG04 DO-41 SK2023 2CG30 ERD09 SK3-0230 30df1-30df10 Text: 2.快恢复塑封整流二极管序型号号 IF VRRM VF Trr A V V µs 外形（1）快恢复塑封整流二极管 1 1F1-1F7 2 FR10-FR60 1A 50-1000V 1.3 0.15-0.5 R-1 1A-6A 50-1000V 1.3 0.15-0.5	Original	PDF	FR10-FR60 0-1000V 1N4933-1N4937 1N4942-1N4948 00-1000V DO-41 BA157-BA159 2cn4d RH1Z DO41 2CG04 DO-41 SK2023 2CG30 ERD09 SK3-0230 30df1-30df10
K8Q2815UQB Abstract: BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141 Text: K8Q2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8Q2815UQB 128Mb 56TSOP) 56-PIN 50TYP K8Q2815UQB BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141
1N007 Abstract: fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005 Text: FAGQR ELECTRONICS 57E D WÊ 3 ^ 3 2 5 Q000LS3 T31 « F G R S CROSS REFERENCE COMPETITIVE SERIES COMPETITOR FAGOR SERIES 1 5SKE 8 2 - 1 5KE 300 1 SKE 8 2 A -1 5KE 300 A THOM/CS1/MOT/GI THOM/GSI/MOT/GI 1 SKE 8 2 C -1 5KE 300 C 1 5SE 12 - 1 SSE 300 1 5SE 12 A • 1 5SE 300 A	OCR Scan	PDF	0G0Gb53 15SKE 15KE82 5KE300C 1KAB10-1KAB1C0 W005F-W10F 100JB FB1001 FB1006 1N007 fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005