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    BA232 Price and Stock

    ITT Interconnect Solutions CA3102E24-9P-B-A232

    CONN RCPT PNL MNT W/PIN 2POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3102E24-9P-B-A232 Bulk 100 1
    • 1 $43.53
    • 10 $35.488
    • 100 $29.3125
    • 1000 $29.3125
    • 10000 $29.3125
    Buy Now

    ITT Interconnect Solutions CA3106E10SL-3S-B-A232

    CONN PLUG W/SKT 3POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3106E10SL-3S-B-A232 Bulk 48 1
    • 1 $51.3
    • 10 $41.816
    • 100 $35.075
    • 1000 $35.075
    • 10000 $35.075
    Buy Now

    ITT Interconnect Solutions CA3100R14S-7P-B-A232

    CONN RCPT W/PIN 3POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3100R14S-7P-B-A232 Bulk 26 1
    • 1 $44.86
    • 10 $36.565
    • 100 $30.2875
    • 1000 $30.2875
    • 10000 $30.2875
    Buy Now

    ITT Interconnect Solutions CA3106E18-13P-B-A232

    CONN PLUG W/PINS 4POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3106E18-13P-B-A232 Bulk 26 1
    • 1 $76.04
    • 10 $61.991
    • 100 $53.95
    • 1000 $53.95
    • 10000 $53.95
    Buy Now

    ITT Interconnect Solutions CA3106E10SL-3P-B-A232

    CONN PLUG W/PINS 3POS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CA3106E10SL-3P-B-A232 Bulk 25 1
    • 1 $50.58
    • 10 $41.23
    • 100 $34.5375
    • 1000 $34.5375
    • 10000 $34.5375
    Buy Now

    BA232 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA232010R0KE Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 700W Original PDF
    BA232050R0KE Ohmite Chassis Mount Resistors, Resistors, RES CHAS MNT 50 OHM 10% 700W Original PDF

    BA232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA232

    Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325
    Text: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS


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    PDF BA232 100oC BA232-5 BA232-10 BA232-20 BA232-30 BA232-40 BA232-50 BA232-60 BA232-70 BA232 Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


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    PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    BY238

    Abstract: BV043 XAL W6 n117 BY236 BZ141 ZA2-BV043 xalb02 BV073 XALJ174
    Text: Characteristics Control stations and enclosures Double insulated control stations, for control circuits Environment Conformity to standards Product certifications Protective treatment Ambient air temperature Vibration resistance Shock resistance Electric shock protection


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    PDF 35051-EN fm/11 BY238 BV043 XAL W6 n117 BY236 BZ141 ZA2-BV043 xalb02 BV073 XALJ174

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


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    PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    CH2124

    Abstract: CH2156 CH2160 MNP10 imodem 56k
    Text: HIGH SPEED INTERNET MODEM FAMILY CH2124 CH2156 CH2160 - FEATURES • • • • • • • • • • • • • • • • • • • • • • • • • • • • Point-to-Point Protocol PPP with Password Authentication Protocol (PAP) to connect to the Internet.


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    PDF CH2124 CH2156 CH2160 34bvis, 22bis, MNP10. 42bis MNP10 CH21XX CH2124 CH2156 CH2160 imodem 56k

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


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    PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


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    PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


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    PDF K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


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    PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA251

    Abstract: 16N10
    Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA95

    Abstract: 8A0000
    Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


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    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H BA95 8A0000

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original
    PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    ba2325

    Abstract: BA232 Silicon rectifier single phase
    Text: EDAL INDUSTRIES, INC 51 COMMERCE STREET*EAST HAVEN, CONNECTICUT 06512*TELEPHONE 203 -467-2591*FAX (203)-469-5928 WWW: http://eemoniine.com/edai INTERNET: edalindtâ),aol.com BA232- SILICON RECTIFIER SINGLE PHASE L .200 MAX - f LEAD DIA: .032 REFERENCE ONLY”


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    PDF BA232- --r320 N--r320 BA232-5 BA232-10 BA232-20 BA232-30 BA232-40 BA232-50 BA232-60 ba2325 BA232 Silicon rectifier single phase

    Untitled

    Abstract: No abstract text available
    Text: EDAL INDUSTRIES, INC. 51 COMMERCE STREET*EAST HAVEN, CONNECTICUT 06512TELEPHONE 203 467-2591*FAX (203)-469-5928 WWW: http://eemonline.comyedal INTERNET: [email protected] BA232- SILICON RECTIFIER SINGLE PHASE I .200 MAX. _r LEAD DIA: .032 * REFERENCE ONLY”


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    PDF 06512TELEPHONE BA232- BA232-5 BA232-10 BA232-2 BA232-20 BA232-30 BA232-40

    48939-2

    Abstract: corrosion inhibitor BA343
    Text: HELIAX Coaxial Cables W all Entry System s A Single Entrance Wall/Roof Feed-Thru Assembly. Includes rubber boot, clamp and galvanized steel plate. Order from table. B Multiple Entrance Wall/Roof Feed Thru Plate. Plate with one or more 4 or 5 inch entry holes. Use


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    PDF STPORT-14 STPORT-22 STPORT-23 STPORT-24 STPORT-26 STPORT-34 STPORT-36 STPORT-46 48939-2 corrosion inhibitor BA343

    transistor smd S27

    Abstract: Z541 smd transistor BL s27 SSV288ACW R4800 B-426 rc288acl cellular "cellular connection" SMT DF T1A smd transistor t1A 55
    Text: SSV288ACW SSV288ACW SocketModem Family O R ockw ell INTRODUCTION FEATURES Rockwell's SSV288ACW SocketModem™ family provides the OEM with a complete V.34 data/Jax/voice modem in a compact aocket-mountable module. This complete solution allows OEMs to bring new features to market


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    PDF SSV288ACW SSV288ACW MD136 002fc SV288ACW -Z541 PD-SSV144ACWAJ P08SV288ACW transistor smd S27 Z541 smd transistor BL s27 R4800 B-426 rc288acl cellular "cellular connection" SMT DF T1A smd transistor t1A 55