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    BASE STATION LTE Search Results

    BASE STATION LTE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    BASE STATION LTE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    jrc 78L08

    Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
    Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN


    Original     		AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08 PDF

    Untitled

    Abstract: No abstract text available
    Text: TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •


    Original     		TQP0103 TQP0103 PDF

    SKY65351-11

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKY65351-11: 450 MHz Receive/IF Module For 2G/3G Base Station Applications Applications • 2G, 2.5G, 3G base station transceivers: − GSM, EDGE, CDMA, WCDMA, LTE • General purpose RF systems Features • Programmable gain range: 3 to 23 dB


    Original     		SKY65351-11: 44-pin, J-STD-020) SKY65351-11 201384B PDF

    Untitled

    Abstract: No abstract text available
    Text: TQP0104 DC to 4 GHz, 30 W, Discrete PA Applications • • • • • • W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features • • • •


    Original     		TQP0104 TQP0104 PDF

    SKY65350-11

    Abstract: SKY65350 201198B SKY65350-1 GSM module 2011
    Text: PRELIMINARY DATA SHEET SKY65350-11: 350 MHz Receive/IF Module For 2G/3G Base Station Applications Applications • 2G, 2.5G, 3G base station transceivers: − GSM, EDGE, CDMA, WCDMA, LTE • General purpose RF systems Features • Programmable gain range: 3 to 23 dB


    Original     		SKY65350-11: 44-pin, J-STD-020) SKY65350-11 201198B SKY65350 201198B SKY65350-1 GSM module 2011 PDF

    how dsp is used in radar

    Abstract: JESD204 JESD204A Application of dsp in radar nxp proximity antenna design JESD204B beam steering DAC1408D radar front end Altera Stratix V
    Text: JESD204A for wireless base station and radar systems November 2010 Maury Wood- NXP Semiconductors Deepak Boppana, Ian Land - Altera Corporation 0.0 Introduction - New trends for wireless base station and radar systems Digital Signal Processing DSP technology continues to transform radar systems and


    Original     		JESD204A how dsp is used in radar JESD204 Application of dsp in radar nxp proximity antenna design JESD204B beam steering DAC1408D radar front end Altera Stratix V PDF

    ALTERA avalon

    Abstract: RRU 32 SFP altera base station lte hsmc altera
    Text: OBSAI Reference Design Data Sheet DS-01026-1.0 June 2011 The Open Base Station Architecture Initiative OBSAI specifications for base transceiver station (BTS) modules support a wide range of wireless communication protocols. This data sheet introduces and describes the Altera OBSAI reference design. The


    Original     		DS-01026-1 RP3-01 ALTERA avalon RRU 32 SFP altera base station lte hsmc altera PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief Lantiq COSIC™-Modem The future-proven Single Chip Base Station Solution for DECT/ CAT-iq™ Basestations in VoIP Home Gateways DECT/ CAT-iq™ Solution • COSIC™-Modem: – CAT-iq base station functionality in combination with Lantiq Gateway solutions


    Original     		ARX300 GRX300 PB-e-0034-v2 PDF

    T3150

    Abstract: No abstract text available
    Text: Transcede 3xxx Wireless Base Station System on Chip Data Sheet 843xx-DSH-001-A October 2013 Contents Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		843xx-DSH-001-A T3150 PDF

    SEMINAR ON 4G TECHNOLOGY

    Abstract: HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater
    Text: Wireless Infrastructure 2G/3G/4G Base Station Solutions Guide national.com/wireless 2Q 2008 1Q 2008 Solutions for 2G, 2.5G, 3G, LTE and 4G wireless mobile base stations e.g. GSM/EDGE/ GPRS, W-CDMA, CDMA2000, TD-SCDMA, WiMAX as well as other applications


    Original     		CDMA2000, SEMINAR ON 4G TECHNOLOGY HDMI TO VGA MONITOR PINOUT LTE MIMO repeater lte RF Transceiver MIMO 2x2 catalog 4000 single family smd cmos VGA TO HDMI PINOUT LM97593 GSM hsdpa repeater circuit GSM 3g repeater circuit dual gsm repeater PDF

    mrf8s21140hs

    Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
    Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3 mrf8s21140hs MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L j491 PDF

    232272461009

    Abstract: MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3 232272461009 MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 PDF

    frequency synthesizer for mobile wimax

    Abstract: wimax base station base station lte ndk ocxo
    Text: Crystal Oscillator Model Name NH37M28LC Oven-Controlled Crystal Oscillator OCXO for Fixed Communication Equipment • Main Application ● Mobile communications(LTE,WiMAX) base station ● Measuring instrument ● Synthesizer ● Exchanger ● High-end router


    Original     		NH37M28LC NH37M28LC-10M-NSA3487A NH37M28LC frequency synthesizer for mobile wimax wimax base station base station lte ndk ocxo PDF

    HSR6

    Abstract: IRL96 J637
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 0, 10/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HSR6 MRF8S21200H HSR6 IRL96 J637 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 MRF8P8300HR6 PDF

    j598

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 j598 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S26060H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S26060HR3 MRF8S26060HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26060H MRF8S26060HR3 MRF8S26060HSR3 MRF8S26060HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 PDF

    j377

    Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S26120H MRF8S26120HR3 MRF8S26120HSR3 MRF8S26120HR3 j377 MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA j382 ATC800B HSR3 PDF

    GSC356-HYB2500

    Abstract: MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P26080H Rev. 0, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P26080HR3 MRF8P26080HSR3 Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8P26080H MRF8P26080HR3 MRF8P26080HSR3 MRF8P26080HR3 GSC356-HYB2500 MRF8P26080 LTE base station GRM32DR71H335KA MRF8P26080HS AN1955 atc600f ATC600F220JT250XT 2595MHz J625 PDF

    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453 PDF