BCW60A
Abstract: BCW60D BCW61A BCW61B BCW61C BCW61D
Text: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse
|
Original
|
BCW61A
BCW61D
OT-23
O-236)
UL94V-0
BCW60A
BCW60D
BCW60A
BCW60D
BCW61A
BCW61B
BCW61C
BCW61D
|
PDF
|
BCW61A
Abstract: No abstract text available
Text: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-07-31 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse
|
Original
|
BCW61A
BCW61D
BCW61D
OT-23
O-236)
UL94V-0
BCW60A
BCW60D
BCW61A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61D SOT-23 TRANSISTOR PNP FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR AXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units
|
Original
|
OT-23
BCW61D
OT-23
-50mA
-50mA,
-10mA
100MHz
|
PDF
|
NPN marking 8e
Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
|
OCR Scan
|
OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
NPN marking 8e
FMMT2222A
H9 sot 23
BCW33
|
PDF
|
bc 357 transistor
Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D
Text: BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
|
Original
|
BCW61B
BCW61C
BCW61D
OT-23
200Hz
bc 357 transistor
bc 357 transistor datasheet
BCW61B
BCW61C
BCW61C-BC
BD 140 transistor
PNP Epitaxial Silicon Transistor sot-23
transistor BC 55
transistor BD 140
BCW61D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Central BCW61B BCW61C BCW61D TM Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
|
Original
|
BCW61B
BCW61C
BCW61D
BCW61B:
BCW61C:
BCW61D:
OT-23
200Hz
|
PDF
|
Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
|
OCR Scan
|
OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
|
PDF
|
FMMT2222A
Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
|
OCR Scan
|
OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
FMMT2222A
FMMT-A06
BCW33
|
PDF
|
Diodes Marking K6
Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C
|
OCR Scan
|
OT-23
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BSS63
BSS64
Diodes Marking K6
BCX17
Diodes Marking K7
MARKING U1
marking A06
MARKING C4
Marking H2
S4 2A
S5 MARKING
|
PDF
|
BCW61A
Abstract: BCW61B BCW61C BCW61D BCw6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
|
Original
|
OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
BCW61B
BCW61D
BCw6
|
PDF
|
100MHZ
Abstract: BCW61D
Text: RECTRON BCW61D SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed
|
Original
|
BCW61D
OT-23
OT-23
MIL-STD-202E
100MHZ
BCW61D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
|
Original
|
OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
|
PDF
|
990Q
Abstract: BCW61D MMBT5086 lb21
Text: SAMSUNG SEMICONDUCTOR INC; BCW61D 1ME D | 7 ^ 1 4 2 0007515 1 | PNP EPITAXIAL SILICON TRANSISTOR T -A V GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cottector-Base Voltage CoSector-Emitter Voltage Emitter-Base*Voltage
|
OCR Scan
|
BCW61D
MMBT5086
OT-23
10/jA
990Q
lb21
|
PDF
|
BCW61A
Abstract: BCW61B BCW61C BCW61D
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors
|
Original
|
OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
BCW61B
BCW61D
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise
|
Original
|
BCW61B
BCW61C
BCW61D
BCW61B
OT-23
|
PDF
|
bc 357 transistor
Abstract: BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61B BCW61D BC transistor series transistor W-32 Bcw61d sot23
Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise
|
Original
|
BCW61B
BCW61C
BCW61D
BCW61B
OT-23
bc 357 transistor
BCW61C-BC
BCW61C
transistor BC SERIES
transistor BC 55
BCW61D
BC transistor series
transistor W-32
Bcw61d sot23
|
PDF
|
BCW61DR
Abstract: BCW61CR BCW61BR H12E BCW61AR K3024 BCW60 h22e BCW61A BCW61B
Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW61 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES -20 -20 µA nA VCES =-32V VCES =-32V ,Tamb=150oC
|
Original
|
BCW61
BCW60
150oC
-10mA
-50mA,
BCW61DR
BCW61CR
BCW61BR
H12E
BCW61AR
K3024
BCW60
h22e
BCW61A
BCW61B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Tb MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC d ËT| 96D 8 1 9 4 9 CXSTRS/R F M A X IM U M RATINGS b3t>?254 O O a n ^ Rating Symbol Value U nit Collector-Emitter Voltage v CEO 32 V Collector-Base Voltage v CBO 32 V Emitter-Base Voltage Ve b o 5.0 V •c
|
OCR Scan
|
BCW61A,
BCW61B
BCW61C,
BCW61D
OT-23
O-236AA/AB)
BCW61B,
|
PDF
|
313 Motorola
Abstract: 25CC 2N5086 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C
Text: MOTOROLA SC -CXSTRS/R F> 6 3 6 7 2 54 MOTOROLA SC Tb XSTRS/R M A X IM U M RATINGS D eT| b3L.72S4 ODÖITM? 1 F 96D 8 1 9 4 7 ^ D _ * Symbol Value Unit Coilector-Emitter Voltage VCEO 32 V Collector-Base Voltage V cB O 32 V Ve b o 5.0 V ic 100 mAdc Symbol Max
|
OCR Scan
|
62Adc,
BCW61A,
BCW61B,
BCW61C,
BCW61D
b3b72SM
313 Motorola
25CC
2N5086
BCW60A
BCW60B
BCW60C
BCW60D
BCW61A
BCW61B
BCW61C
|
PDF
|
BCW61A
Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
|
Original
|
BCW61A/B/C/D
OT-23
KS5086
BCW61B
BCW61C
BCW61D
BCW61A
BCW61A
transistor mark BA
transistor BC 310
BCW61C
transistor BC 55
BCW61D
|
PDF
|
transistor smd marking BA
Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Text: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05
|
Original
|
BCW61A/B/C/D
OT-23
BCW61B
BCW61C
BCW61D
BCW61A
transistor smd marking BA
transistor smd marking bb
transistor BC 550
transistor smd marking BA sot-23
transistor smd marking BC
BCW61B
bc transistor icbo nA
MARKING SMD PNP TRANSISTOR
transistor smd ba rs
TRANSISTOR BC 550 b
|
PDF
|
transistor bc 537
Abstract: BCW61A BCW61C TRANSISTOR BV 32 BD marking BCW61D
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic SOT-23 T a = 2 5 T : Symbol Rating Unit VcBO VcEO -32 -32 -5.0 -100 350 -55-150 V Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
|
OCR Scan
|
BCW61A/B/C/D
KST5086
OT-23
BCW61B
BCW61C
BCW61D
BCW61A
transistor bc 537
TRANSISTOR BV 32
BD marking
|
PDF
|
transistor smd marking BA
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
|
Original
|
BCW61A/B/C/D
OT-23
BCW61A
BCW61B
BCW61C
BCW61D
transistor smd marking BA
|
PDF
|
BCw610
Abstract: transistor marking code 431 BCW61B
Text: Philips Semiconductors Product specification PNP general purpose transistors BCW61 series PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.
|
OCR Scan
|
BCW61
BCW60.
BCW61A
BCW61B
BCW61C
BCW610
8CW61C
BCw610
transistor marking code 431
|
PDF
|