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    BD115 TRANSISTOR Search Results

    BD115 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BD115 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD115 TRANSISTOR

    Abstract: BD115 EMITTER BASE COLLECTOR BD115 VCE1 BD115 application TRANSISTOR bd115
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF BD115 C-120 BD115Rev110301D BD115 TRANSISTOR BD115 EMITTER BASE COLLECTOR BD115 VCE1 BD115 application TRANSISTOR bd115

    BD115

    Abstract: TRANSISTOR bd115 BD115 TRANSISTOR ic 245 EMITTER BASE COLLECTOR BD115
    Text: Transys Electronics L I M I T E D NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage (RBE<1KΩ Ω Collector Base Voltage


    Original     		PDF BD115 BD115 TRANSISTOR bd115 BD115 TRANSISTOR ic 245 EMITTER BASE COLLECTOR BD115

    BD115 TRANSISTOR

    Abstract: BD115 BD115 application EMITTER BASE COLLECTOR BD115
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BD115 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION Collector Emitter Voltage


    Original     		PDF BD115 C-120 BD115Rev110301D BD115 TRANSISTOR BD115 BD115 application EMITTER BASE COLLECTOR BD115

    2n5859 equivalent

    Abstract: BFW16A bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP


    Original     		PDF 2N5784 2N5785 2N5786 BFW16A BFW44 BFX34 BFX84 BFX85 2n5859 equivalent bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141

    2n5861

    Abstract: 2n5859 equivalent 2N5859 BD115 BF178 2N5784 2N5785 2N5786 2N6190 2N6191
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ (mA) VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP *ICEO *ICES


    Original     		PDF 2N5784 2N5785 2N5786 BFW16A BFW44 BFX34 BFX84 BFX85 25-June 2n5861 2n5859 equivalent 2N5859 BD115 BF178 2N5784 2N5785 2N5786 2N6190 2N6191

    2N5859

    Abstract: 2N6191 2N5784 2N5785 2N5786 2N5861 2N6190 2N6192 2N6193 BC140
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP MAX *ICEO *ICES


    Original     		PDF 2N5784 2N5785 2N5786 BFW16A BFW44 BFX34 BFX84 BFX85 2N5859 2N6191 2N5784 2N5785 2N5786 2N5861 2N6190 2N6192 2N6193 BC140

    BF337

    Abstract: 2N5859 BF257-BF258-BF259 BF178 BFR36
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MIN MAX *ICEO *ICES


    Original     		PDF BFT28C BFW16A BFW44 BFX34 BFX84 BFX85 BF337 2N5859 BF257-BF258-BF259 BF178 BFR36

    BC319B

    Abstract: BF337 BC115 BC114 BC207 BC113 BC207A BC207b fairchild semiconductors BC208
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE T A B LE M a x R a tin g s Co d e Vceo V o lts Ptot T a — 25*C M in mW C h a r a c te r is tic s @


    OCR Scan     		PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC319B BF337 BC207b fairchild semiconductors BC208

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistore NFN Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, U n le ss Otherwise Specified) Po (W) @Tc=25°c ^C80 VC8 (mA) Max e (V) 'cES V CE @ (V) hFE @ 'c & (mA) VBE(SAT) 'c e c * ^CBO ^CEO V E0O (V) Min (VI


    OCR Scan     		PDF BFX85 BFX86 BFY50 BFY51 BFY52 BFY56

    BF117

    Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
    Text: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18


    OCR Scan     		PDF BC236 O-106 BC285 BC312 BC393 BC394 BC450 O-92F BC530 O-92A BF117 BF294 BF178 BF299 BF174 BF298 BF120 BF137

    PE7058

    Abstract: PE7059 BD115 2N5832 BC533 2N5831 se7055 BF337 high voltage npn to-92 SE7056
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL HIGH VOLTAGE AMPLIFIER TRANSISTORS BY ASCENDING VcEO VCEO Item DEVIC E NO. Poliirity NPN PNP hFE »T @ ic V Min Min/Max mA MHz Min Pd C0b pF Max (Confd) Ta 25° C mW TC 25° C W Package No. 1.79 TO-92 1 BC533 160 80/250


    OCR Scan     		PDF BC533 MPS5551M 2N5831 2N5832 2N5833 BF336 BD115 BF337 2N4926 MPSA43 PE7058 PE7059 BD115 2N5832 BC533 2N5831 se7055 BF337 high voltage npn to-92 SE7056

    2N5859

    Abstract: 2N5861 bc140 BC441 transistor BD115 BFW16A 2N5784 2N5785 2N5786 2N6190
    Text: Small Signal Transistors TO-39 Case Continued T Y P E NO. D E S C R IP T IO N v CBO (V ) v C EO V e (V) b h :E O • C BO @ V C B O <V) (HA) (V ) @ IC @ vCE <mA) (V) VC E (S A T ) @ lc (V ) (m A ) *'C E O *VC E R *T c ob ton *off NF (MHz) (pF> (ns) (ns)


    OCR Scan     		PDF 2N5784 2N5785 2N5786 2N5859 2N5861 BFS95 BFT28C BFW16A BFW44 BFX34 bc140 BC441 transistor BD115 2N6190

    2N5859

    Abstract: 2N5784 2N5785 2N5786 2N5861 2N6190 2N6191 2N6192 2N6193 BC140
    Text: Small Signal Transistors TO-39 Case Continued T Y PE NO. DESCRIPTION VC BO h :E @ I C @ VC E VCE(SA T) lc (roA) (MHz) <mA) (V) (V) C0 b *TYP NF *off (ns) (dB) *TYP *TYP *TYP *TYP MIN MIN MIN *'C EO *'C E S *ICEV *'CER MIN M AX MIN MAX M AX M AX


    OCR Scan     		PDF 2N5784 2N5785 2N5786 2N5859 2N5861 BFS89 BFS95 BFT28C BFW16A BFW44 2N6190 2N6191 2N6192 2N6193 BC140

    bfr36

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO m h|*E v CEO v EBO ! c b o v CBO (V) (V) m VeSBM T)*C m («A» • *c mt (V) ’teE O *VCER NF ♦r (MU*} <PF) ton <*) *off (n*) (dB) •TYP *TYP *TYP TYP -TYP MM MAX MAX MAX MAX


    OCR Scan     		PDF 2N5784 2N5785 2N5786 2N5859 2N6190 2N6192 2N6193 BC140 bfr36

    BF174

    Abstract: BF336 BF178 BC-530 BF117 BF338 bf391 t bc285 b*137 BFI79
    Text: High Voltage Transistors T Y PE P O L A ­ NO . R IT Y C A SE BC285 BC312 BC393 BC394 BC450 N N P N P M A X IM U M R A T IN G S ^CEO Pi Ic Ic.Yl* ^CER* m W (m A) (V) H FE fT VcE(sat) min m ax Ic (m A) VfE (V) m ax (V) Ic (m A ) m in (M H z) m ax (M H z)


    OCR Scan     		PDF BC285 BC312 BC393 BC394 BC450 BC530 BC531 BC532 BC533 BCW50 BF174 BF336 BF178 BC-530 BF117 BF338 bf391 t b*137 BFI79

    BF337

    Abstract: 2N5832 BF336 2N5058 bf338 se7055 FAIRCHILD TO-106 se7056 BD115 PE7058 transistor
    Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L HIGH VOLTAGE AMPLIFIER TRANSISTORS BY ASCENDING VcEO VCEO Item DEVIC E NO. Poliirity NPN PNP hFE »T @ ic V Min Min/Max mA MHz Min Pd C0b pF Max (Confd) Ta 25° C mW TC 25° C W Package No. 1.79 TO-92 1 BC533 160


    OCR Scan     		PDF BC533 MPS5551M 2N5831 2N5832 2N5833 BF336 BD115 BF337 2N4926 MPSA43 BF337 2N5832 BF336 2N5058 bf338 se7055 FAIRCHILD TO-106 se7056 BD115 PE7058 transistor

    BF336

    Abstract: PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059
    Text: FAIRCHILD TRANSISTORS PO W ER Item IC = 0.1 A 0» @ lc m VCEO hFE V Max Mln/Max o DEVICE NO. Polarity NPN PNP < POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING VQEO V Max @ ic A *T MHz Min(Typ) PD(Max) W T C= 25°C Package No. A Max Continuous 1 BF257


    OCR Scan     		PDF BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F BF336 PE7058 transistor SE7055 BF338 2N5832 SE7056 BD115 BF152 fairchild to-106 2N5059

    bc207

    Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B


    OCR Scan     		PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H ME1120 bc208 BC209 BC207b BC209C BC107B fairchild BC209B

    BEL 100N TRANSISTOR

    Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
    Text: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ


    OCR Scan     		PDF 143S3Tfl 2N2218 285max 2N2219A 2N3501TV 20min. 22min. 2N918 2N929 BEL 100N TRANSISTOR BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115

    BC207b

    Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
    Text: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW


    OCR Scan     		PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC113 SGS BC208A BC209B BF257 BC209 BC208 transistor

    BD115

    Abstract: TO-92-4pin
    Text: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)


    OCR Scan     		PDF 2N3439 2N3742 BD115 TO-92-4pin

    BC236

    Abstract: BF305 BCW50 BC285 BF137 BF298 BF299 BC312 BCW5 BCX30
    Text: NO. v 'c Cob V CE SAT Tl X M A X IM U M R A T IN G S CEO Pd (mW) 'c m • Im A I (V ) min max BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 T O -18 TO-39 T O -18 TO-18 300 360 800 400 400 50 100 150 100 100 120 120 100 180 180 25 30 50 50 30 200 BC450 BC530


    OCR Scan     		PDF BC236 O-106 BC285 BC312 BC393 BC394 BC450 O-92F BC530 O-92A BF305 BCW50 BF137 BF298 BF299 BCW5 BCX30

    2N3501

    Abstract: 2N3439 2N3440 2N3500 2N3742 2N4926 BD115 BF258 BF259 BF336
    Text: CONTINENTAL DEVICE INDIA b3E D • 23033*14 OQQOOflb W ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO VCEO (V) (V) Min Min VEBO (V) Min •cBO (MA) Max VCB (V) hFE ® lc •& VCE (mA) (V) Min Max 10.0 0.75 10.000 10.0 1.00 40 2N3742 300


    OCR Scan     		PDF 2N3439 2N3742 BF259 2N3501 2N3440 2N3500 2N4926 BD115 BF258 BF336

    CDIL BC141-16

    Abstract: BFX40 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840
    Text: -39 : H DIM A B C D E F G H J K PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR L MEN 8,50 7,74 6,09 0,40 - 2,41 4,82 0,71 0,73 12,7 42 DEG . ' MAX 9,39 8,50 6,60 0,53 0,88 2,66 5,33 0,86 1,02 48 DEG ALL DIMENSIONS ARE IN M.M. TO-39 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N656 2N657 BFX40 BFX41 BFX87 CK100 CK150 CDIL BC141-16 CDIL 2N2219a 2N3019 CDIL bfx64 h071 2N1613 2N1644 2N1837 2N1840