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    BD316 Search Results

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    BD316 Price and Stock

    IndustrialSupplies.com CBD31624

    24X175' X 3/16" BUBLLE ROLL W/ D
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    DigiKey CBD31624 Box
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    Panasonic Electronic Components ERJ-6RBD3161V

    RES 3.16K OHM 0.5% 1/10W 0805
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    DigiKey ERJ-6RBD3161V Reel 5,000
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    Avnet Americas ERJ-6RBD3161V Reel 20 Weeks 5,000
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    Mouser Electronics ERJ-6RBD3161V
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    Newark ERJ-6RBD3161V Bulk 5,000
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    Panasonic Electronic Components ERJ-6RBD3160V

    RES 316 OHM 0.5% 1/10W 0805
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    DigiKey ERJ-6RBD3160V Reel 5,000
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    Avnet Americas ERJ-6RBD3160V Reel 20 Weeks 5,000
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    Mouser Electronics ERJ-6RBD3160V
    • 1 $0.16
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    Master Electronics ERJ-6RBD3160V
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    Ozdisan Elektronik ERJ-6RBD3160V
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    JRH Electronics 805-061-16Z18-4BD316

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16Z18-4BD316 1
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    JRH Electronics 805-061-16ZNU8-7BD316

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16ZNU8-7BD316 1
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    BD316 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD316 Motorola The European Selection Data Book 1976 Scan PDF
    BD316 Motorola Complementary silicon power NPN transistor. 16 A, 80 V, 200 W. Scan PDF
    BD316 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD316 Unknown Cross Reference Datasheet Scan PDF
    BD316 Unknown Transistor Replacements Scan PDF
    BD316 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BD316 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD316 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD316 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD316 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD316G On Semiconductor TRANS GP BJT NPN 80V 16A 2TO-3 Scan PDF

    BD316 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    BT061S

    Abstract: BDX50 GENTRON STH16018 MRF435 BDY77
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT ICBO Max ON) Min (Hz) (A) Max r (CE)sat Max (s) Max (Ohms) Tp.r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 BT061 BT061R BT061RS BT061S


    Original     		PDF BT061 BT061R BT061RS BT061S BT062 BT062R BT062RS BT062S BT069 BT069R BDX50 GENTRON STH16018 MRF435 BDY77

    BD-316

    Abstract: TMP76 bq2050 bq2050H ZVNL110A SCR SN 101 BENCHMARQ MICROELECTRONICS
    Text: Preliminary bq2050H Lithium Ion Power Gauge IC Features Ø Ø Ø Conservative and repeatable measurement of available capacity in Lithium Ion rechargeable batteries 16-pin narrow SOIC Designed for battery pack integration - Ø Ø Ø 120µA typical operating current


    Original     		PDF bq2050H 16-pin BD-316 TMP76 bq2050 ZVNL110A SCR SN 101 BENCHMARQ MICROELECTRONICS

    BD317

    Abstract: transistor npn 3-326 bd 317 BD318 BD-316 S357 BD317 TRANSISTOR AN-415 BD315 BD316
    Text: motorola -c x s t r s / r sc .6367254 MOTOROLA f > SC CXSTRS/R F » TJt.3t.7aS4 DOÖOSTD 96D D T -S W -T 80590 f-33- ¿>3 NPN MOTOROLA BD315, BD316 SEMICONDUCTOR PNP TECHNICAL DATA BD317, BD318 C O M P L E M E N T A R Y SILICO N HIGH-POW ER T R A N S IS T O R S


    OCR Scan     		PDF b3fci7554 BD31S, BD316 BD317, BD318. BD315 BD317 BD318 3b755L| transistor npn 3-326 bd 317 BD-316 S357 BD317 TRANSISTOR AN-415

    transistor D318

    Abstract: d318 transistor transistor D317 BD317 BD318 d318 80592
    Text: motorola -c x s t r s / r sc .6367254 f MOTOROLA > » T Jt.3t.7aS 4 SC CXSTRS/R F 96D NPN MOTOROLA BD317, BD318 C O M PLEM ENTARY SILICO N HIGH-POWER TRANSISTO RS . designed for high' quality amplifiers operating up to 100 Watts into 4 ohm load with BD31S, BD316 and into 8 ohm load with BD317,


    OCR Scan     		PDF BD315, BD316 BD317, BD318 BD31S, BD318. AN-415) transistor D318 d318 transistor transistor D317 BD317 BD318 d318 80592

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    sd317

    Abstract: Motorola 3-326 transistor SS3672 BD317 BD318 BD315 BD-316 H2525 transistor BP 109 S357
    Text: motorola -c x s t r s / r sc »FJt.3t.7aSM fj 6 3 6 7 2 5 4 ; MOTOROLA SC CXS T RS / R F 96D 80590 NPN B D 315, B D 316 PNP BD317, BD318 M OTOROLA SEMICONDUCTOR TECHNICAL DATA C O M P L E M E N T A R Y SILICON HIGH-POW ER T R A N S IS T O R S . OGfi OSTD


    OCR Scan     		PDF BD315, BD316 BD317, BD318. BD315 BD317 BD318 AN-415) b3b755M sd317 Motorola 3-326 transistor SS3672 BD-316 H2525 transistor BP 109 S357

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BD267

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E I fll331fl? 0000040 3 • S d L B I - 3 3 - 6 1 ^ 1 i tj j ■type No. SST' Package V q e o . cont ^FE VCE/>C PD BD262B BD263A BD263B BD266 BD267 PNP NPN NPN PNP NPN T0126 T0126 T0126 T0220 T0220 100 100 120 60 60 4 4 4 8 8 750rain 750min


    OCR Scan     		PDF fll331fl? BD262B BD263A BD263B BD266 BD267 T0126 T0220 BD267

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan     		PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    Germanium drift transistor

    Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
    Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of


    OCR Scan     		PDF orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor

    Untitled

    Abstract: No abstract text available
    Text: 6 7 DRAWI NG THIS MADE IN THI RD DRAWI NG ANGLE PROJECTION 15 U N P U B L I 5 H E D CO PYR IG H T 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED . ALL 5 2 3 4 IN T ER N A T IO N A L R IG H T S DI ST LOC 19 BD RESERVED. REV I 5 I0N5 77 LTR ZONE DE5CR[RTION


    OCR Scan     		PDF BD3165 BD3825 BD4960 BD5477 BD6559 PONYE57EP, IN-C-50, HD-20 12-FEB-99 amp40973

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


    OCR Scan     		PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


    OCR Scan     		PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175