MAX478
Abstract: MAX4783 MAX4785 MAX479 MAX4793 MAX4795 MAX406B MAX921-924 max941 r1398
Text: Various Maxim Spice Macromodels MAX478 FAMILY MACROMODELS * -* FEATURES: * 17uA Max Supply Current * 70uV Max Offset Voltage * 250pA Max Input Offset Current * Input Voltage Range Includes Ground * Available in 8-Pin DIP/SO Dual MAX478
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MAX478
250pA
MAX478)
14-Pin
MAX479)
MAX47815
MAX478
MAX4785
MAX4783
MAX4783
MAX4785
MAX479
MAX4793
MAX4795
MAX406B
MAX921-924
max941
r1398
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BFG425W
Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power
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BFG425W
BFG21W
BFG21W
603508/01/pp12
amplifier 2606
BFG425
STR 6507
texas rf power transistor
transistor bf 203
PHILIPS TRANSISTORS
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2SC3953-SPICE
Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f
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12A02CH-SPICE
12A02CH
12A02CH
2SB1205
2SB1205
2SC3953-SPICE
2sa1538 spice
2sc3953 spice
2SC5610
MJE-360
2SC4548
2sk4096
2SB631K
2SC5706 equivalent
2SC2911-SPICE
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Dec-07-2001
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BFP540F
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Aug-09-2001
BFP540F
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BFP540
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Jan-28-2004
BFP540
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marking ats
Abstract: BFP540F
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
Jan-28-2004
marking ats
BFP540F
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BFP540
Abstract: 030232
Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Aug-29-2003
BFP540
030232
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BFP540F
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s
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BFP540F
Sep-05-2003
BFP540F
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
-j100
Jul-14-2003
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
50Ohm
Jul-22-2004
-j100
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STR G 9656
Abstract: BFG590W npn transistors MATV amplifiers NF 0.8
Text: DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION
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M3D123
BFG590W;
BFG590W/X
OT343N
BFG590W
SCA60
125104/00/03/pp12
STR G 9656
BFG590W
npn transistors MATV amplifiers NF 0.8
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BFC520
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor
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BFC520
OT353
SCA55
127127/00/03/pp12
BFC520
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Untitled
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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ic marking Yb
Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
ic marking Yb
INFINEON ATS
TRANSISTOR MARKING YB
BFP420F
BFP540F
E6327
keic
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Untitled
Abstract: No abstract text available
Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP540
VPS05605
OT343
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Philips FA 261
Abstract: str 5708 BFG403W
Text: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Apr 17 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES
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BFG403W
MSB842
BFG403W
SCA55
127127/00/03/pp12
Philips FA 261
str 5708
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str 5708
Abstract: BFG403W
Text: DISCRETE SEMICONDUCTORS BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES
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BFG403W
SCA57
125104/00/04/pp12
str 5708
BFG403W
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transistor equivalent book FOR D 1047
Abstract: TR zo 103 ma PRF957 d 1047 transistor MGS513 marking 28 SOT323 uhf transistor equivalent 1047
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PRF957 UHF wideband transistor Product specification Supersedes data of 1999 Mar 01 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor PRF957 FEATURES PINNING • Small size
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M3D102
PRF957
OT323
125006/03/pp16
transistor equivalent book FOR D 1047
TR zo 103 ma
PRF957
d 1047 transistor
MGS513
marking 28 SOT323 uhf
transistor equivalent 1047
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"MARKING CODE P4"
Abstract: BFG410W RF NPN POWER TRANSISTOR 3 GHZ CA 5668
Text: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES
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BFG410W
SCA57
125104/00/04/pp12
"MARKING CODE P4"
BFG410W
RF NPN POWER TRANSISTOR 3 GHZ
CA 5668
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES
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BFG410W
SCA55
127127/00/03/pp12
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vexta
Abstract: mje 3001 RESISTOR BF 0207 BF243 BF 184 transistor NPN/NF 034 BF249 VAR10 bf345 BETA-240
Text: Semi-Custom & Custom Solutions Calogic designs and manufactures Semi-Custom and Custom Bipolar Junction Isolated Jl and Dielectrically isolated (Dl) products SPICE models, layout, DRC and ERC are available. These processes are executed in our own state of the art FAB
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TRANSISTOR C 2577
Abstract: transistor A62
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector
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PRF957
OT323
AM062
/printrun/ed/pp14
TRANSISTOR C 2577
transistor A62
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PBR941
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y iI T PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification UHF wideband transistor
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OCR Scan
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PBR941
PBR941
125104/1200/05/pp16
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