Untitled
Abstract: No abstract text available
Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz
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BFP620F
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Untitled
Abstract: No abstract text available
Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4
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BFP620F
Oct-12-2004
0mA/50
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BFP620F
Abstract: TRANSISTOR Bf 522 marking R2s transistor bf 425 TRANSISTOR MARKING 707 transistor marking R2s BFP620F AC
Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4
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BFP620F
Apr-21-2004
BFP620F
TRANSISTOR Bf 522
marking R2s
transistor bf 425
TRANSISTOR MARKING 707
transistor marking R2s
BFP620F AC
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Untitled
Abstract: No abstract text available
Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4
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BFP620F
Jul-08-2004
0mA/50
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Transistor BC 1078
Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data High gain low noise RF transistor 3 Small package 1.4 x 0.8 x 0.59 mm 2 4 Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz Maximum stable gain
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BFP620F
E7764
Jul-03-2003
Transistor BC 1078
Transistor BC 1078 transistor
transistor marking R2s
TRANSISTOR MARKING YB
BC 1078 transistor
BF 245 C equivalent
BI 425
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ic marking Yb
Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
ic marking Yb
INFINEON ATS
TRANSISTOR MARKING YB
BFP420F
BFP540F
E6327
keic
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BFP620F
Abstract: BFP420F
Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz
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BFP620F
BFP620F
BFP420F
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Untitled
Abstract: No abstract text available
Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4
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BFP620F
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BFP620F
Abstract: No abstract text available
Text: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4
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BFP620F
BFP620F
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Untitled
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
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TRANSISTOR MARKING YB
Abstract: BFP420F BFP540F s parameters 4ghz
Text: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line to p v ie w " ! A T s d ir e c tio n o f u n r e e lin g
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BFP540F
TRANSISTOR MARKING YB
BFP420F
BFP540F
s parameters 4ghz
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W24512AK-15
Abstract: No abstract text available
Text: W24010 inbond Electronics Corp. -~-l_p-w-e-_I.-I-I-P-IIII-y_ -1_-LI- .-.-mme.-.I_ I_., .-L-.~I-.-I-.III-.-~- -.a-m-m-._-_ 128K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24010 is a normal-speed, very low-power CMOS static RAM organized as 131072 x 8 bits that
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W24010
W24010
W240107OSL,
W24010-70LE
W24010-7OLI,
l-408-9436666
l-408-9436668
W24512AK-15
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marking ats
Abstract: BFP540F
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
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BFP540F
Jan-28-2004
marking ats
BFP540F
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BFP540F
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s
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BFP540F
Sep-05-2003
BFP540F
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Untitled
Abstract: No abstract text available
Text: BFP620F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 1 • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz
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BFP620F
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2T908A
Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,
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OCR Scan
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T-0574D.
30Eiaa
Coi03nojiH
2T908A
2T602
2T907A
KT604
1HT251
1T813
2t903
KT920A
PO6 115.05
KT117
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led 7 doan
Abstract: sla 6102 LT 8521 lg 7607 DB82 JL - 012C Z8000 8C08 5252 F 0906 LT 210D
Text: Advanced Micro Computers A subsidiary of Advanced Micro D evices A m 96/4016 Evaluation Board Monitor Listing REVISION RECORD REVISION A DESCRIPTION In itial Is s u e 1 2 /3 /7 9 B S e c o n d P rin tin g ( 1 /7 /8 0 ) Publication No. 0 0 6801 46 Address com m ents concerning
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Am96/4016
Z8000
000STK:
led 7 doan
sla 6102
LT 8521
lg 7607
DB82
JL - 012C
8C08
5252 F 0906
LT 210D
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