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    BFP 95 Search Results

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    BFP 95 Price and Stock

    ITT Interconnect Solutions CA3100R24-11SBF80

    Circular MIL Spec Connector CA3100R24-11SBF80
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    ABLIC Inc. S-19509BFPA-BCT1U4

    LDO Voltage Regulators
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    Mouser Electronics S-19509BFPA-BCT1U4
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    ABLIC Inc. S-19519BFPA-BCT1U4

    LDO Voltage Regulators
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    Mouser Electronics S-19519BFPA-BCT1U4
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    BFP 95 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFP67

    Abstract: BFP67R
    Text: BFP 67 / BFP 67 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features


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    BFP67 BFP67R D-74025 PDF

    16 point bfp fft verilog code

    Abstract: verilog code for single precision floating point multiplication IFFT verilog code for FFT 16 point verilog code for floating point adder VERILOG code for FFT 1024 point how to test fft megacore verilog code for FFT 256 point verilog code radix 4 multiplication verilog code for 64 point fft
    Text: FFT/IFFT Block Floating Point Scaling Application Note 404 October 2005, ver. 1.0 Introduction The Altera FFT MegaCore® function uses block-floating-point BFP arithmetic internally to perform calculations. BFP architecture is a trade-off between fixed-point and full floating-point architecture.


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    PDF

    delta hmi

    Abstract: hmi 1200 power cable fault locator NCS 1704-Y15R ABB EH 250 SUBSTATION CONTROL SYSTEM 60870 RTXP 18
    Text: %UHDNHU SURWHFWLRQ WHUPLQDO ZLWK DXWRPDWLF UHFORVLQJ DQG V\QFKURFKHFN HDWXUHV • Current - Breaker failure protection BFP) • Secondary system supervision - Fuse failure supervision (FUSE) • Control - Synchrocheck (SYN) - Automatic reclosing function (AR)


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    009-BEN 112-BEN SE-721 096-BEN delta hmi hmi 1200 power cable fault locator NCS 1704-Y15R ABB EH 250 SUBSTATION CONTROL SYSTEM 60870 RTXP 18 PDF

    Block Floating Point Implementation

    Abstract: tms320c54x floating point processor a 69258 specifications block diagram of of TMS320C54X radix-4 DIT FFT C code 0C72 SPRA610 n5 st pt 2245 ym 238
    Text: Application Report SPRA610 - December 1999 A Block Floating Point Implementation on the TMS320C54x DSP Arun Chhabra and Ramesh Iyer Digital Signal Processing Solutions ABSTRACT Block floating-point BFP implementation provides an innovative method of floating-point


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    SPRA610 TMS320C54x Block Floating Point Implementation tms320c54x floating point processor a 69258 specifications block diagram of of TMS320C54X radix-4 DIT FFT C code 0C72 n5 st pt 2245 ym 238 PDF

    CR7006

    Abstract: MIL-M-81531 CR7001-000 CR7008-000 CR7012-000 CR7014-000
    Text: Introducing BFP Bubble-free Polyester Label TE Connectivity TE has developed bubble-free polyester labels, which support clear identification and readability of instructional labels. These industrial high-tack, permanent adhesive labels have unique micro-channels to allow entrapped gas from


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    ENV00 CR7023-000 CR7024-000 CR7025-000 CR7026-000 CR7027-000 BFP-064064-25-9 CR7006 MIL-M-81531 CR7001-000 CR7008-000 CR7012-000 CR7014-000 PDF

    Q62702-F1577

    Abstract: 193W
    Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    900MHz OT-343 Q62702-F1577 Dec-12-1996 Q62702-F1577 193W PDF

    Q62702-F1318

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFP 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F1318 OT-143 Q62702-F1318 PDF

    Q62702-F1319

    Abstract: tp 806
    Text: NPN Silicon RF Transistor BFP 183 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    Q62702-F1319 OT-143 Q62702-F1319 tp 806 PDF

    BFP92A

    Abstract: No abstract text available
    Text: BFP 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range, especially for wide band antenna amplifiers. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: 92 V


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    D-74025 BFP92A PDF

    acs sot-343

    Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 PDF

    620 sot-343

    Abstract: acs sot-343
    Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


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    VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343 PDF

    274 231

    Abstract: 955 539 ic
    Text: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143


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    D-74025 274 231 955 539 ic PDF

    ACS 086

    Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
    Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


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    VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP 193W NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers up to 2 GHz 4  For linear broadband amplifiers  fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    VPS05605 OT-343 900MHz Oct-12-1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP 93 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 2 3 1 4 94 9279 Marking: FE Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter


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    D-74025 PDF

    transistor b 1238

    Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
    Text: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1


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    VPS05605 Q62702-F1794 OT-343 50Ohm 45GHz -j100 Sep-09-1998 transistor b 1238 Q62702-F1794 transistor bf 520 transistor bfp 520 PDF

    NF 847 G

    Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
    Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W


    OCR Scan
    858/W 857/W IQ62702-C1847 Q62702-C954 62702-C1884 Q62702-C1850 Q62702-C1742 Q62702-F1393 Q62702-F1394 Q62703-F97 NF 847 G NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSORS M51167BP,BFP SINGLE CHIP PREAMPLIFIER FOR DUAL CASSETTE RECORDERS WITH NOISE REDUCTION DESCRIPTION PIN CONFIGURATION TOP VIEW The M51167BP, BFP is a semiconductor integrated circuit for use in dual cassette recorders with noise reduction systems.


    OCR Scan
    M51167BP M51167BP, PDF

    H7C18

    Abstract: HA17384APS sop14 164 uc3843a applications CT3000 H7C1 FRD DFG1C8
    Text: ADE-204-022 Z HA17384APS, HA17384BPS/BFP, HA17385BPS/BFP High Speed Current Mode PWM Control IC for Switching Power Supply HITACHI Description HA17384A/B and HA17385B are PWM control sw itching regulator IC series suitable for highspeed, current-m ode sw itching pow er


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    ADE-204-022 HA17384APS, HA17384BPS/BFP, HA17385BPS/BFP HA17384A/B HA17385B D-85622 H7C18 HA17384APS sop14 164 uc3843a applications CT3000 H7C1 FRD DFG1C8 PDF

    transistor rf cm 1104

    Abstract: SL 1424 11p
    Text: NPN Silicon RF Transistor BFP 93A • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking


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    OT-143 transistor rf cm 1104 SL 1424 11p PDF

    M51167BFP

    Abstract: m51167 M-511 36P2R-A M511* mitsubishi M51167BP
    Text: MITSUBISHI SOUND PROCESSOR ICs M51167BP,BFP SINGLE CHIP PREAMPLIFIER FOR DUAL CASSETTE RECORDER DESCRIPTION The M 51167 is an IC designed fo r radio C D /cassette tape players. The IC, in addition to recording and playback preamplifiers 2 ch fo r dual cassette, has


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    M51167BP M51167 220ui M51167BFP M-511 36P2R-A M511* mitsubishi PDF

    ac 0624 transistor 17-33

    Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
    Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


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    F1217 OT-143 ac 0624 transistor 17-33 uc 1604 0166 415 04 1 060 transistor cq 529 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz


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    Q62702-F1794 OT-343 PDF

    Untitled

    Abstract: No abstract text available
    Text: T e m ic U6225B-BFP TELEFUNKEN Semiconductors 2.9 GHz PLL for SAT TV Receiver with Universal Bus Features • 2.9 GHz divide-by-16 prescaler integrated • Universal bus: PC-bus or 3-wire-bus PC-bus software compatible to U6204B 3-wire-bus software compatible to


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    U6225B-BFP divide-by-16 U6204B U6358B 0015EFUNKEN 1554E SO-16 PDF