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Infineon Technologies AG BFP540ESDH6327XTSA1 RF TRANS NPN 5V 30GHZ SOT343-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP540ESDH6327XTSA1	Cut Tape	3,117		1	1 $0.5 10 $0.348 100 $0.2703 1000 $0.22941 10000 $0.22941	Buy Now
	BFP540ESDH6327XTSA1	Digi-Reel	3,117		1	1 $0.5 10 $0.348 100 $0.2703 1000 $0.22941 10000 $0.22941	Buy Now
	BFP540ESDH6327XTSA1	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21747	Buy Now
Mouser Electronics	BFP540ESDH6327XTSA1		4,352			1 $0.5 10 $0.312 100 $0.251 1000 $0.23 10000 $0.203	Buy Now
Newark	BFP540ESDH6327XTSA1	Cut Tape	2,992		5	1 $0.557 10 $0.399 100 $0.318 1000 $0.318 10000 $0.318	Buy Now
	BFP540ESDH6327XTSA1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.257	Buy Now
Rochester Electronics	BFP540ESDH6327XTSA1		2,515		1	1 $0.21 10 $0.21 100 $0.1974 1000 $0.1785 10000 $0.1785	Buy Now
Chip One Stop	BFP540ESDH6327XTSA1	Cut Tape	3,900			1 - 10 $0.46 100 $0.248 1000 $0.211 10000 $0.2	Buy Now

EBV Elektronik	BFP540ESDH6327XTSA1		369,000	9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BFP540ESDH6327XTSA1		294,000		1	1 - 10 - 100 - 1000 - 10000 $0.3435	Buy Now
Win Source Electronics	BFP540ESDH6327XTSA1		18,200			1 - 10 - 100 $0.6023 1000 $0.4663 10000 $0.4663	Buy Now
Infineon Technologies AG BFP540FESDH6327XTSA1 RF TRANS NPN 5V 30GHZ 4TSFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP540FESDH6327XTSA1	Digi-Reel	1,878		1	1 $0.48 10 $0.339 100 $0.2628 1000 $0.22285 10000 $0.22285	Buy Now
	BFP540FESDH6327XTSA1	Cut Tape	1,878		1	1 $0.48 10 $0.339 100 $0.2628 1000 $0.22285 10000 $0.22285	Buy Now
	BFP540FESDH6327XTSA1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.21119	Buy Now
Mouser Electronics	BFP540FESDH6327XTSA1		3,440			1 $0.35 10 $0.265 100 $0.235 1000 $0.221 10000 $0.183	Buy Now
Newark	BFP540FESDH6327XTSA1	Cut Tape	2,938		1	1 $0.536 10 $0.389 100 $0.309 1000 $0.267 10000 $0.267	Buy Now
Rochester Electronics	BFP540FESDH6327XTSA1		35,483		1	1 $0.2038 10 $0.2038 100 $0.1916 1000 $0.1732 10000 $0.1732	Buy Now
Chip One Stop	BFP540FESDH6327XTSA1	Cut Tape	1,975			1 - 10 $0.15 100 $0.14 1000 $0.14 10000 $0.14	Buy Now

EBV Elektronik	BFP540FESDH6327XTSA1			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFP-540F-E6327 RF TRANS NPN 5V 30GHZ 4TSFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP-540F-E6327	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG BFP540FESDE6327 RF TRANS NPN 5V 30GHZ 4TSFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP540FESDE6327	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.34052	Buy Now
NexGen Digital	BFP540FESDE6327		6,763			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BFP540E6327BTSA1 RF TRANS NPN 5V 30GHZ SOT343-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BFP540E6327BTSA1	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.25484	Buy Now

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BFP54 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
BFP540	Infineon Technologies	NPN Silicon Germanium RF Transistor	Original	PDF
BFP540	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFP540	Infineon Technologies	NPN Silicon RF Transistor low noise- 1.8 GHz	Original	PDF
BFP540	Infineon Technologies	Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; V_CEO (max): 4.5 V; I_C(max): 80.0 mA; P_tot (max): 250.0 mW; f_T (typ): 30.0 GHz; F (typ): 0.9 dB;	Original	PDF
BFP540	Philips Semiconductors	NPN 9 GHz Wideband Transistor	Original	PDF
BFP540E6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V SOT-343	Original	PDF
BFP540E6327BTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V SOT-343	Original	PDF
BFP540E6433	Infineon Technologies	TRANS GP BJT NPN 4.5V 0.08A 4	Original	PDF
BFP540ECSP	Infineon Technologies	BFP540ECSP	Original	PDF
BFP540ESD	Infineon Technologies	NPN Silicon RF Transistor	Original	PDF
BFP540ESD	Infineon Technologies	Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; V_CEO (max): 4.5 V; I_C(max): 80.0 mA; P_tot (max): 250.0 mW; f_T (typ): 30.0 GHz; F (typ): 0.9 dB;	Original	PDF
BFP540ESDE6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V ESD SOT-343	Original	PDF
BFP540ESDE6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V ESD SOT-343	Original	PDF
BFP540ESDH6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 4.5V 80MA SOT343	Original	PDF

BFP540ESDH6327XTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 4.5V 80MA SOT343	Original	PDF
BFP540F	Infineon Technologies	NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4	Original	PDF
BFP540F	Infineon Technologies	NPN Silicon Germanium RF Transistor	Original	PDF
BFP540FE6327	Infineon Technologies	TRANS GP BJT NPN 4.5V 0.08	Original	PDF
BFP 540F E6327	Infineon Technologies	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 4.5V TSFP-4	Original	PDF
BFP540FE6327	Infineon Technologies	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 4.5V TSFP-4	Original	PDF

BFP54 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and	Original	540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3	PDF
marking AUs Abstract: BFP420F BFP540FESD amplifier marking code a Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)	Original	BFP540FESD marking AUs BFP420F BFP540FESD amplifier marking code a	PDF
BFP540 Abstract: INFINEON application note Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Aug-09-2001 BFP540 INFINEON application note	PDF
BFP540F Abstract: No abstract text available Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !	Original	BFP540F Aug-09-2001 BFP540F	PDF
Transistor BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 Transistor BFP540	PDF
marking AUs Abstract: No abstract text available Text: BFP540ESD NPN Silicon RF Transistor 3 Preliminary data 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21.0 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line • Exellent ESD performance	Original	BFP540ESD VPS05605 OT343 marking AUs	PDF
ic marking Yb Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g	Original	BFP540F ic marking Yb INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic	PDF
marking aus Abstract: BFP420F BFP540FESD amplifier marking code a Text: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)	Original	BFP540FESD marking aus BFP420F BFP540FESD amplifier marking code a	PDF
INFINEON ATS Abstract: BFP540 BGA420 Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343 INFINEON ATS BFP540 BGA420	PDF
BFP540 Abstract: capacitor 0402 AN057 N057 murata VCOs Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 7 A 1 . 9 G H z L o w N o i s e A m p l i f i e r o pt i m i z e d f o r h i g h IP3 using BFP540 R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by	Original	BFP540 BFP540 capacitor 0402 AN057 N057 murata VCOs	PDF
Untitled Abstract: No abstract text available Text: BFP540FESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small	Original	BFP540FESD AEC-Q101	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon Germanium RF Transistor 3 4 For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB Gold metallization for high reliability 1 SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jul-14-2003	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm Jul-22-2004 -j100	PDF
Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343	PDF

Untitled Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)	Original	BFP540 OT343	PDF
BFP540ESD Abstract: BGA420 Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343 BFP540ESD BGA420	PDF
BFP540 Abstract: No abstract text available Text: Application Note No. 057 High Frequency Components T. Tracht A 1.9 GHz Low Noise Amplifier optimised for high IP3 using BFP540 Features • NF = 1.3 dB • Gain = 15.5 dB • OIP3 = 24 dBm • Small SOT 343 Package Description 1900 MHz LNA Design Example Infineon’s BFP540 is a high performance, low	Original	BFP540 BFP540 BFP540,	PDF
BFP540 Abstract: No abstract text available Text: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 VPS05605 OT343 50Ohm -j100 Jan-28-2004 BFP540	PDF
BFP540 Abstract: INFINEON ATS BGA420 Transistor BFP540 Text: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFP540 OT343 BFP540 INFINEON ATS BGA420 Transistor BFP540	PDF
Untitled Abstract: No abstract text available Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g	Original	BFP540F	PDF
BFP540ESD Abstract: BGA420 Text: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line	Original	BFP540ESD OT343 10may BFP540ESD BGA420	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency	OCR Scan	bbS3T31 D0314T7 BFP540 OT173X) BFP540 OT173 OT173X RE120	PDF
SOT-173 Abstract: SOT173 BFP540 wideband transistor sot173 SOT173 RF transistor Text: Philips Semiconductors H b t i 53 T 31 0 03 14 ^7 TT? AP X Objective specification NPN 9 GHz wideband transistor — ^ — BFP540 N AMER PHILIPS/DISCRETE bTE D e PINNING features • High power gain • Low noise figure PIN DESCRIPTION 1 collector • High transition frequency	OCR Scan	bti53T31 OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 wideband transistor sot173 SOT173 RF transistor	PDF
SOT-173 Abstract: sot173 BFP96 BFQ32C Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A	OCR Scan	BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C	PDF

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Infineon Technologies AG BFP540ESDH6327XTSA1

Infineon Technologies AG BFP540FESDH6327XTSA1

Infineon Technologies AG BFP-540F-E6327

Infineon Technologies AG BFP540FESDE6327

Infineon Technologies AG BFP540E6327BTSA1

BFP54 Datasheets (26)

BFP54 Datasheets Context Search

Untitled

marking AUs

BFP540

BFP540F

Transistor BFP540

marking AUs

ic marking Yb

marking aus

INFINEON ATS

BFP540

Untitled

Untitled

Untitled

Untitled

Untitled

BFP540ESD

BFP540

BFP540

BFP540

Untitled

BFP540ESD

Untitled

SOT-173

SOT-173