Untitled
Abstract: No abstract text available
Text: Alphanumeric Type Index SIEMENS Type Ordering Code BH 201 Page Q68000-A8759- F261 143 BH 701 Q68000-A8760- F261 156 BH 704 Q68000-A8761-F261 159 BH 705 Q68000-A8762-F261 162 BH-900 Series on request 164 FH 301-20 Q68000-A8764- F261 146 FH 301-40 Q68000-A8765-F261
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Q68000-A8759-
Q68000-A8760-
Q68000-A8761-F261
Q68000-A8762-F261
BH-900
Q68000-A8764-
Q68000-A8765-F261
Q68000-A8766-F261
Q68000-A8767-F261
Q65210-L101
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philips ferrite core 4b1
Abstract: OM2064 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1
Text: Philips Sem iconductors bb53T31 DDaSHTT bh? Product specification IAPX Hybrid integrated VHF/UHF wideband amplifier OM2064 N AMER PHILIPS/DISCR ETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for
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btiS3T31
0D325QS
OM2064
OM2064
DM2064
philips ferrite core 4b1
ei ferrite core
vHF amplifier DIAGRAM
philips ferrite 4b1
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Untitled
Abstract: No abstract text available
Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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HYM536100A
36-bH
36-bit
HY514400A
HY531000A
HYM536100AM/ALM
HYM536100AMG/ALMG
DQ0-DQ35)
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16-Blt
Abstract: b7ah
Text: O K I Semiconductor MSM531632C : - 1,048,576-Word x 16-BH or 2,097,152-Word x 8-Bit Low-Voltage Mask ROM ' D E S C R IP T IO N w„e,d °“ o o , Ï "d5P* Ï > CM<? M“ k ROM lhat ca" ' ' “ “ “ »'y betweu, 1,048576- 2,097,152-w ord x 8-bit configurations. The MSM531632C operates on a single 3 0 V or
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MSM531632C---
576-Word
16-Bit
152-Word
576-wora
MSM531632C
MSM531622C)
b7E424Ã
E10T3
16-Blt
b7ah
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fc4k
Abstract: on4546 BH6410KN BH6410KN-1 BH6410KN-1-2 BH641OKN-1 TSZ22111 TSZ22111-04 ts2022
Text: PAGE TYPE PRODUCTS 1/19 BH 6 4 1 Q K N SEMICONDUCTOR LSI Model name BH 6 41 0 K N Structure Silicon monolithic; Integration Circuit Product name Audio I/O L SI for Digital still camera Outer dimensions Fig. 1 Plastic mold Block diagram Fig. 2 Measurement circuit diagram
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BH6410KN
BH6410KN
12PIN
16PIN
47KC2.
TS202201-BH6410KN-1-2
TSZ22111â
fc4k
on4546
BH6410KN-1
BH6410KN-1-2
BH641OKN-1
TSZ22111
TSZ22111-04
ts2022
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Untitled
Abstract: No abstract text available
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
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Si4953DY
Abstract: No abstract text available
Text: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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SI9945
Abstract: Si9945DY
Text: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9945DY
SI9945
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Power MOSFET, Fairchild
Abstract: Si9410DY
Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9410DY
Power MOSFET, Fairchild
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Si9936DY
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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Power MOSFET, Fairchild
Abstract: Fairchild MOSFET Si4416DY
Text: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4416DY
Power MOSFET, Fairchild
Fairchild MOSFET
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Si4420DY
Abstract: w8 mosfet
Text: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4420DY
w8 mosfet
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Untitled
Abstract: No abstract text available
Text: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9936DY
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SI9430DY
Abstract: No abstract text available
Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9430DY
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4410DY
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SI4412DY
Abstract: No abstract text available
Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4412DY
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Si9955DY
Abstract: a6aa Power MOSFET, Fairchild 9a2a bhra
Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9955DY
a6aa
Power MOSFET, Fairchild
9a2a
bhra
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SI4936DY
Abstract: av 66
Text: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4936DY
av 66
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Si9953DY
Abstract: No abstract text available
Text: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si9953DY
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Untitled
Abstract: No abstract text available
Text: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching
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Si4953DY
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Si4410DY
Abstract: No abstract text available
Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4410DY
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Untitled
Abstract: No abstract text available
Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si4410DY
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BB515
Abstract: BAND III stabiliser circuit diagram BA282 BB619 S11A S11B SO20 U2329B-AFL usw 334
Text: U2329B–AFL TELEFUNKEN Semiconductors Gm bH TV-Tuner-IC with Two Separate Oscillators and Mixers, SAW-Driver and Dual-State Band Switch Features D 9 V supply voltage D SAW filter driver with low impedance output D Frequency range from 48 to 860 MHz D Voltage regulator for stable operating characteristics
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U2329B
D-74025
BB515
BAND III
stabiliser circuit diagram
BA282
BB619
S11A
S11B
SO20
U2329B-AFL
usw 334
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AW SO-8
Abstract: No abstract text available
Text: Si9410DY Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9410DY
AW SO-8
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