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Infineon Technologies AG SI4410DY MOSFET N-CH 30V 10A 8SO
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DigiKey	SI4410DY	Tube			95	1 - 10 - 100 $2.29389 1000 $2.29389 10000 $2.29389	Buy Now
Rochester Electronics LLC SI4410DY MOSFET N-CH 30V 10A 8SOIC
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DigiKey	SI4410DY	Bulk			523	1 - 10 - 100 - 1000 $0.57 10000 $0.57	Buy Now
onsemi SI4410DY MOSFET N-CH 30V 10A 8SOIC
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DigiKey	SI4410DY	Cut Tape			1	1 $1.06 10 $1.06 100 $1.06 1000 $1.06 10000 $1.06	Buy Now
	SI4410DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.32844	Buy Now
Infineon Technologies AG SI4410DYPBF MOSFET N-CH 30V 10A 8SO
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DigiKey	SI4410DYPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4410DYPBF	Bulk			3,800	1 - 10 - 100 - 1000 - 10000 $0.81	Get Quote
Win Source Electronics	SI4410DYPBF		10,873			1 - 10 - 100 $1.519 1000 $1.274 10000 $1.274	Buy Now
NXP Semiconductors SI4410DY,518 MOSFET N-CH 30V 8SO
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DigiKey	SI4410DY,518	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SI4410DY,518		192		1	1 $0.325 10 $0.325 100 $0.3055 1000 $0.2763 10000 $0.2763	Buy Now

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SI4410DY Datasheets (23)

Part	Manufacturer	Description	Datasheet Type	PDF
Si4410DY	Fairchild Semiconductor	Single N-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI4410DY	Fairchild Semiconductor	Single N-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI4410DY	International Rectifier	HEXFET Power Mosfet	Original	PDF
SI4410DY	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
SI4410DY	NXP Semiconductors	SI4410DY - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@[email protected] mOhm; VDSmax: 30 V	Original	PDF
SI4410DY	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF
Si4410DY	Philips Semiconductors	N-Channel Enhancement Mode Field-Effect Transistor	Original	PDF
Si4410DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4410DY	Vishay Telefunken	N-channel 30-v (d-s) Mosfet	Original	PDF
SI4410DY	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier	Scan	PDF
SI4410DY,118	NXP Semiconductors	SI4410DY - N-channel TrenchMOS logic level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
SI4410DY,518	NXP Semiconductors	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I_D DC: 10 A; Q_gd (typ): 7 nC; R_DS(on): 13.5@[email protected] mOhm; V_DSmax: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"	Original	PDF
SI4410DY_NL	Fairchild Semiconductor	Single N-Channel, Logic Level, PowerTrench MOSFET	Original	PDF
SI4410DYPBF	International Rectifier		Original	PDF

SI4410DY-REVA	Vishay Siliconix	MOSFETs	Original	PDF
SI4410DY-REVA	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8	Scan	PDF
SI4410DY-REVA-E3	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4410DY SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410DY-T1-A-E3	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410DY-T1-REVA	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF

SI4410DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MS-012AA Abstract: Si4410DY Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced	Original	PDF	91853C Si4410DY 800mW MS-012AA
D0807 Abstract: Si4410DY Text: Si4410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4410DY S45252Rev. D0807
PC505 Abstract: PR503 PD506 PC502 mitac 8 MAX786 PR504 Text: 1 2 3 4 5 6 7 8 A A PWR_ON_P PR504 100K 0603B 2 S 2 3 1 OUT 1 +12V_P 21 B 2 PC3 1U 1206 4 PC501 100U/25V ELC01 2 1 3 2 S LI2208 LI2209 PR2 0.01_1% 2512 PL2 L2301 +5V_P PD501 EC10QS04 S PQ1 SI4410DY_V SO8 G 4 PD502 1 PU2 MAX786 PC18 0.01U 0603B 21 BEAD 1812	Original	PDF	PR504 0603B SI4410DY 0603B PC507 10U/16V CP3528 PD506 BAS32 PC510 PC505 PR503 PC502 mitac 8 MAX786
Si4410DY Abstract: Si4936DY Si6434DQ Si9410DY Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8	Original	PDF	Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96
Untitled Abstract: No abstract text available Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced	Original	PDF	91853C Si4410DY 800mW
Untitled Abstract: No abstract text available Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced	Original	PDF	Si4410DYPbF 800mW EIA-481 EIA-541.
irf 739 mosfet Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced	Original	PDF	Si4410DYPbF 800mW EIA-481 EIA-541. irf 739 mosfet mosfet irf 380 EIA-541 ic power so 8 single mosfet
4410 SO-8 Abstract: FDR4410 Si4410DY SOIC-16 Text: April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. 9.3 A, 30 V. RDS ON = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V.	Original	PDF	FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 4410 SO-8 SOIC-16
Si4410DY-T1-REVA Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3 Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA	Original	PDF	Si4410DY Si4410DY-REVA Si4410DY-T1-REVA Si4410DY-REVA-E3 Si4410DY-T1-A-E3 08-Apr-05
Si4410DY Abstract: No abstract text available Text: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4410DY
9959 Abstract: No abstract text available Text: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	PDF	Si4410DY 9959
Si4410DY SPICE Device Model Abstract: Si4410DY Text: \\\ SPICE Device Model Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4410DY 0-to-10V 29-Jul-03 Si4410DY SPICE Device Model
SI4410DY-T1 Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3 Si4410DY-T1-REVA Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA	Original	PDF	Si4410DY Si4410DY-REVA Si4410DY-T1-REVA Si4410DY-REVA-E3 Si4410DY-T1-A-E3 18-Jul-08 SI4410DY-T1
FDR4410 Abstract: Si4410DY SOIC-16 Text: May 1997 ADVANCE INFORMATION FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8	Original	PDF	FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 70oC/W 125oC/W 135oC/W SOIC-16

a-14-s Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ	Original	PDF	Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 a-14-s
4410 SO-8 Abstract: c125t-a 4410 FDR4410 Si4410DY SOIC-16 Text: November 1997 PRELIMINARY FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8	Original	PDF	FDR4410 FDR4410 Si4410DY OT-23 OT-223 SOIC-16 4410 SO-8 c125t-a 4410 SOIC-16
Si4410DY Abstract: No abstract text available Text: Si4410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4410DY S-47958--Rev. 15-Apr-96
power mosfet so8 FL Abstract: 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA Si4410DY Text: PD - 91853B Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International	Original	PDF	91853B Si4410DY 800mW power mosfet so8 FL 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA
Si4410DY Abstract: No abstract text available Text: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4410DY 18-Jul-08
PR25 Abstract: PC517 L2403 PL503 L2401 CP3528 PC504 elc02 PD508 PC519 Text: 1 2 3 4 5 6 7 8 A A VMAIN_P 1 21,22,23 PR29 10 0805C 1 B PQ7 SI4410DY_V 2 D PR31 G 2 L2404 PR32 X 0603B PD508 BAS32 PR18 PL4 L2402 L2403 0.01_1% 2512 5 6 7 8 PC519 47P 0603B PQ8 D G 2 4 L2405 PC518 0.1U 0603B 1 PR506 1M 0603B PC23 10U/16V CP3528 PC17 PD507	Original	PDF	0805C 0603B MAX798 PC518 PC520 PR25 PC517 L2403 PL503 L2401 CP3528 PC504 elc02 PD508 PC519
Si9410DY Abstract: Siliconix Si4410DY Si4936DY Si6434DQ Text: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D	Original	PDF	Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 Siliconix
Si4410DY Abstract: No abstract text available Text: Si4410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	PDF	Si4410DY S-47958--Rev. 15-Apr-96
s49536 Abstract: No abstract text available Text: TEMIC C’/I/IIATW Si4410DY Se mi conduct ors N-Channel 30-V D-S Rated MOSFET Product Summary V ds (V) 30 rDS(on) (ß) Id (A) 0.0135 @ V G s = 10 V ±10 0.020 @ V q s = 4.5 V ±8 D O S O -8 s [T ~ n s [X ~T~1 D s d ~6~\| D G \|~ 4 ~ 1 2 D d Ô S Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)	OCR Scan	PDF	Si4410DY 150cC S-49536--Rev 18-Aug-97 4410DY S-49536-- s49536
Untitled Abstract: No abstract text available Text: May 1997 FAIRCHILD S E M IC O N D U C T O R ADVANCE INFORMATION tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOT -8 package is 40% smaller than the SO-8	OCR Scan	PDF	FDR4410 Si4410DY

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Infineon Technologies AG SI4410DY

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SI4410DY Datasheets (23)

SI4410DY Datasheets Context Search

MS-012AA

D0807

PC505

Si4410DY

Untitled

Untitled

irf 739 mosfet

4410 SO-8

Si4410DY-T1-REVA

Si4410DY

9959

Si4410DY SPICE Device Model

SI4410DY-T1

FDR4410

a-14-s

4410 SO-8

Si4410DY

power mosfet so8 FL

Si4410DY

PR25

Si9410DY

Si4410DY

s49536

Untitled