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    BIPOLAR JUNCTION TRANSISTOR Search Results

    BIPOLAR JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDMOS

    Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
    Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior


    Original     		PDF AN1223 LDMOS LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications

    amplitude modulation applications

    Abstract: LDMOS AN1223
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 amplitude modulation applications LDMOS AN1223

    mosfet high power rf ldmos

    Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
    Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain


    Original     		PDF AN1223 mosfet high power rf ldmos Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB

    ccb transistor

    Abstract: HP4279A Bipolar Junction Transistor "parasitic capacitance" coax C22E AN024
    Text: Application Note No. 024 Discrete & RF Semiconductors Parasitic Capacitance in Bipolar Junction Transistors The parasitic capacitance present in any bipolar junction transistor can be best modeled as three capacitors connected between each of the three ports of the transistor.


    Original     		PDF

    bipolar junction transistor

    Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
    Text: New Product Announcement February 23, 2007 Announcing Medium Power SOT-223 Bipolar Junction Transistor Product Line Product Highlights DZT851, DZT853, DZT951, DZT953 • Single Transistors in SOT-223 Package • Highest Collector Current Rating Among Diodes, Inc.’s Bipolar Junction Transistor Product


    Original     		PDF OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    Semefab Scotland

    Abstract: semefab
    Text: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and


    Original     		PDF

    BU931 ST

    Abstract: BU931P BU931 bu931 equivalent BU931T
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931 ST BU931P BU931 bu931 equivalent BU931T

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


    Original     		PDF HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405

    BU931P

    Abstract: BU931 BU931T JESD97
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 BU931P BU931 BU931T JESD97

    BU931

    Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
    Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors


    Original     		PDF BU931 BU931P, BU931T O-247 O-220 JESD97. BU931 BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


    Original     		PDF 20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging

    fmmt451ta

    Abstract: FZT1049ATC FZT603TA fzt689bta ZDT6790TA BCX41TA FZT855TA MMSTA13
    Text: DATE: 21st July, 2010 PCN #: 2007 Rev 01 PCN Title: Qualification of Additional Wafer Fabrication Facility for NPN Bipolar Junction Transistors. Qualification of Alternate Die Attach Material for SOT223 Packaged Products.


    Original     		PDF OT223 ZTX855STZ ZXTN5551FLTA ZTX857 ZXTN5551GTA ZTX857STZ ZXTN5551ZTA ZTX869 ZXTN617MATA ZTX869STZ fmmt451ta FZT1049ATC FZT603TA fzt689bta ZDT6790TA BCX41TA FZT855TA MMSTA13

    FMMTL717TA

    Abstract: FMMT723TA FMMT560TA
    Text: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.


    Original     		PDF OT223 s12DE6TA ZXT13P40DE6TA ZXT1M322TA ZXT2M322TA ZXT2M322TC ZXT3M322TA ZXT4M322TA ZXT790AKTC ZXT951KTC FMMTL717TA FMMT723TA FMMT560TA

    tsmc 0.18um CMOS transistor

    Abstract: TSMC 0.18um Process parameters Bipolar Junction Transistor TSMC 0.18um ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model ic 7490 TSMC cmos 0.18um 7490 IC CHIP
    Text: Maxim > App Notes > COMMUNICATIONS CIRCUITS Keywords: Source Resistance, CMOS, Source-Follower, Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating source resistance, intrinisic gm', low-noise amplifier


    Original     		PDF com/an4231 MAX2645: AN4231, APP4231, Appnote4231, tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters Bipolar Junction Transistor TSMC 0.18um ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model ic 7490 TSMC cmos 0.18um 7490 IC CHIP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON  FEATURES * High Operating Junction Temperature * High Voltage Ignition Coil Driver * Very Rugged Bipolar Technology  INTERNAL SCHEMATIC DIAGRAM  ORDERING INFORMATION


    Original     		PDF BU931Z BU931ZL-TA3-T BU931ZG-TA3-T BU931ZL-T3P-T BU931ZG-T3P-T O-220 QW-R214-015

    matched pair JFET

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier jfet differential transistor jfet having voltage gain 741 op-amp transistor jfet 741 opamp field effect transistors opamp 741 jfet idss 10 vp -6
    Text: APPLICATION NOTES JFETS P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors JFETs The Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) AN569)

    bu931 equivalent

    Abstract: transistor bu931 ignition coil npn power darlington COIL IGNITION r214 Transistors Bipolar NPN TO-3P BU931 BU931L-T3P-T BU931-T3P-T Bipolar Junction Transistor npn
    Text: UNISONIC TECHNOLOGIES CO., LTD BU931 NPN SILICON TRANSISTOR NPN POWER DARLINGTON „ FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology „ INTERNAL SCHEMATIC DIAGRAM Lead-free: BU931L Halogen-free:BU931G


    Original     		PDF BU931 BU931L BU931G BU931-T3P-T BU931L-T3P-T BU931G-T3P-T QW-R214-012 bu931 equivalent transistor bu931 ignition coil npn power darlington COIL IGNITION r214 Transistors Bipolar NPN TO-3P BU931 BU931L-T3P-T BU931-T3P-T Bipolar Junction Transistor npn