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    BLF7G27 Price and Stock

    Ampleon BLF7G27L-140,112

    RF MOSFET LDMOS 28V SOT502A
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    Ampleon BLF7G27L-75P,118

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF7G27L-135,112

    RF MOSFET LDMOS 28V SOT502A
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    Rochester Electronics BLF7G27L-135,112 114 1
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    Ampleon BLF7G27L-135,118

    RF MOSFET LDMOS 28V SOT502A
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    Rochester Electronics LLC BLF7G27L-90P,118

    RF MOSFET LDMOS 28V LDMOST
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    DigiKey BLF7G27L-90P,118 Bulk 5
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    BLF7G27 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF7G27L-100 NXP Semiconductors RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications Original PDF
    BLF7G27L-100 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G27L-100,112 NXP Semiconductors BLF7G27L-100 - Power LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack Original PDF
    BLF7G27L-100,118 NXP Semiconductors BLF7G27L-100 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G27L-135 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G27L-135,112 NXP Semiconductors BLF7G27L-135 - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G27L-135,118 NXP Semiconductors BLF7G27L-135 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G27L-140 NXP Semiconductors RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications Original PDF
    BLF7G27L-140 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G27L-140,112 NXP Semiconductors BLF7G27L-140 - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G27L-140,118 NXP Semiconductors BLF7G27L-140 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G27L-150P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G27L-150P,112 NXP Semiconductors BLF7G27L-150P - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G27L-150P,118 NXP Semiconductors BLF7G27L-150P - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF
    BLF7G27L-200PB NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G27L-200PB,112 Ampleon USA Uncategorized - Miscellaneous - TRANS RF LDMOS 200W SOT1110A Original PDF
    BLF7G27L-200PB,118 Ampleon USA Uncategorized - Miscellaneous - TRANS RF LDMOS 200W SOT1110A Original PDF
    BLF7G27L-200PB,112 NXP Semiconductors BLF7G27L-200PB - Power LDMOS transistor, SOT1110A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original PDF
    BLF7G27L-200PB,112 NXP Semiconductors Miscellaneous, Undefined Category, TRANS RF LDMOS 200W SOT1110A Original PDF
    BLF7G27L-200PB,118 NXP Semiconductors BLF7G27L-200PB - Power LDMOS transistor, SOT1110A Package, Standard Marking, Reel Pack, SMD, 13" Original PDF

    BLF7G27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF7G27LS-100

    Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 BLF7G27LS-100 ACPR1980 BLF7G27 flanged pin

    150P

    Abstract: BLF7G27LS-150P ACPR1980 ACPR885
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885

    BLF7G27L-100

    Abstract: No abstract text available
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 IS-95 ACPR885k IS-95 BLF7G27L-100 7G27LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k BLF7G27L-140 7G27LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-200PB

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G27L-135

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-90P; BLF7G27LS-90P IS-95 ACPR885k IS-95 BLF7G27L-90P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 ACPR885k IS-95 IS-95 BLF7G27L-140 7G27LS-140

    transistor j449

    Abstract: BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor
    Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-200PB transistor j449 BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor

    200PB

    Abstract: BLF7G27LS-200
    Text: BLF7G27L-200PB; BLF7G27LS-200PB Power LDMOS transistor Rev. 1 — 5 April 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-200PB; BLF7G27LS-200PB ACPR885k 27LS-200PB 200PB BLF7G27LS-200

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-90P; BLF7G27LS-90P IS-95 ACPR885k BLF7G27L-90P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-100; BLF7G27LS-100 IS-95 ACPR885k BLF7G27L-100 7G27LS-100

    BLF7G27LS-140

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k IS-95 BLF7G27L-140 7G27LS-140 BLF7G27LS-140

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k BLF7G27L-150P 7G27LS-150P

    Untitled

    Abstract: No abstract text available
    Text: NXP power LDMOS transistors BLF7G27LS-100 and BLF7G27LS-140 RF power transistors for leading performance in 2.5 to 2.7 GHz LTE applications Designed for W-CDMA/LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPD-friendly transistors cover the entire frequency range from 2.5 to 2.7 GHz. They enable


    Original     		PDF BLF7G27LS-100 BLF7G27LS-140 BLF7G27LS-100 BLF7G27LS-140

    j310 replacement

    Abstract: 26275
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		PDF BLF7G27L-135 j310 replacement 26275

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k BLF7G27L-140 7G27LS-140

    BLF7G27LS-90P

    Abstract: No abstract text available
    Text: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 1 — 2 November 2010 Objective data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-90P; BLF7G27LS-90P IS-95 ACPR885k IS-95 BLF7G27L-90P BLF7G27LS-90P

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original     		PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-135 Power LDMOS transistor Rev. 1 — 1 November 2011 Objective data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-135 IS-95 ACPR885k bandwidth11

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 01 — 29 March 2010 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF7G27L-75P; BLF7G27LS-75P IS-95 ACPR885k IS-95 BLF7G27L-75P BLF7G27LS-75P