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Ampleon BLF8G20LS-200V RF MOSFET LDMOS 28V LDMOST
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DigiKey	BLF8G20LS-200V	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF8G20LS-230VJ RF MOSFET LDMOS 28V CDFM6
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DigiKey	BLF8G20LS-230VJ	Digi-Reel			1	1 $80.11 10 $80.11 100 $80.11 1000 $80.11 10000 $80.11	Buy Now
	BLF8G20LS-230VJ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BLF8G20LS-230VJ	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BLF8G20LS-230VJ		144		1	1 $68.85 10 $68.85 100 $64.72 1000 $58.52 10000 $58.52	Buy Now
Rochester Electronics LLC BLF8G20LS-230VJ RF MOSFET LDMOS 28V CDFM6
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DigiKey	BLF8G20LS-230VJ	Bulk			5	1 - 10 $71.6 100 $71.6 1000 $71.6 10000 $71.6	Buy Now
Ampleon BLF8G20LS-230VU RF MOSFET LDMOS 28V CDFM6
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DigiKey	BLF8G20LS-230VU	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	BLF8G20LS-230VU		60		1	1 $61.72 10 $61.72 100 $58.02 1000 $52.46 10000 $52.46	Buy Now
Rochester Electronics LLC BLF8G20LS-230VU RF MOSFET LDMOS 28V CDFM6
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DigiKey	BLF8G20LS-230VU	Bulk			5	1 - 10 $64.19 100 $64.19 1000 $64.19 10000 $64.19	Buy Now

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BLF8G20L Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
BLF8G20LS-140GVJ	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B	Original	PDF
BLF8G20LS-140GVQ	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B	Original	PDF
BLF8G20LS-140VJ	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B	Original	PDF
BLF8G20LS-140VU	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT1244B	Original	PDF
BLF8G20LS-160VJ	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, TRANS RF 160W LDMOS CDFM6	Original	PDF
BLF8G20LS-160VU	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, TRANS RF 160W LDMOS CDFM6	Original	PDF
BLF8G20LS-200V	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET	Original	PDF
BLF8G20LS-200V	NXP Semiconductors	Extended video bandwidth with Doherty efficiency	Original	PDF
BLF8G20LS-200V	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G20LS-200V,112	NXP Semiconductors	BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor	Original	PDF
BLF8G20LS-200V,115	NXP Semiconductors	BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor	Original	PDF
BLF8G20LS-200V,118	NXP Semiconductors	BLF8G20LS-200V - BLF8G20LS-200V - Power LDMOS transistor	Original	PDF
BLF8G20LS-220	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G20LS-220J	NXP Semiconductors	BLF8G20LS-220 - BLF8G20LS-220 - Power LDMOS transistor	Original	PDF

BLF8G20LS-220U	NXP Semiconductors	BLF8G20LS-220 - BLF8G20LS-220 - Power LDMOS transistor	Original	PDF
BLF8G20LS-230V	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF8G20LS-230VJ	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT1239B	Original	PDF
BLF8G20LS-230VJ	NXP Semiconductors	BLF8G20LS-230V - BLF8G20LS-230V - Power LDMOS transistor	Original	PDF
BLF8G20LS-230VJ	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, TRANS RF 230W LDMOS CDFM6	Original	PDF
BLF8G20LS-230VU	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT1239B	Original	PDF

BLF8G20L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-210V; BLF8G20LS-210GV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 210 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.	Original	BLF8G20LS-210V; BLF8G20LS-210GV BLF8G20LS-210V 20LS-210GV	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.	Original	BLF8G20LS-160V	PDF
RO4350B max current Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G20LS-200V RO4350B max current	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A	PDF
J37 transistor Abstract: No abstract text available Text: BLF8G20LS-260A Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.	Original	BLF8G20LS-260A J37 transistor	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 1 — 4 July 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G20LS-200V	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-200V	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-220 Power LDMOS transistor Rev. 1 — 7 March 2013 Objective data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G20LS-220	PDF
transistor TO-220 Outline Dimensions Abstract: No abstract text available Text: BLF8G20LS-220 Power LDMOS transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.	Original	BLF8G20LS-220 transistor TO-220 Outline Dimensions	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-140V; BLF8G20LS-140GV Power LDMOS transistor Rev. 1 — 7 February 2014 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.	Original	BLF8G20LS-140V; BLF8G20LS-140GV BLF8G20LS-140V 20LS-140GV	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV	PDF
Bv 42 transistor Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-200V Bv 42 transistor	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 4 — 21 October 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-200V	PDF
transistor f1 j39 Abstract: F1 J37 BLF8G20LS-260A transistor 746 Text: BLF8G20LS-260A Power LDMOS transistor Rev. 3 — 1 May 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.	Original	BLF8G20LS-260A transistor f1 j39 F1 J37 BLF8G20LS-260A transistor 746	PDF

Untitled Abstract: No abstract text available Text: BLF8G20LS-230V Power LDMOS transistor Rev. 1 — 7 November 2013 Preliminary data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-230V	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-230V Power LDMOS transistor Rev. 2 — 21 February 2014 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-230V	PDF
transistor SMD g 28 Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-160V Power LDMOS transistor Rev. 1 — 5 March 2014 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-160V	PDF
BLF8G20LS-260A Abstract: ATC800B blf8g20 X3C19 Text: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A BLF8G20LS-260A ATC800B blf8g20 X3C19	PDF
Untitled Abstract: No abstract text available Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.	Original		PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
Untitled Abstract: No abstract text available Text: NXP Gen8 ceramic LDMOS power transistors with video bandwidth Extended video bandwidth with Doherty efficiency Perfect for today’s multi-mode, multi-carrier base stations, within NXP’s range of Gen8 final-stage broadband amplifiers there is a dedicated family that delivers extended video bandwidth in	Original	BLF8G27LS-150 OT1244	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104	PDF
BLF188XRS Abstract: BLF574XR,112 Text: Updated: 26-Nov-13 RF Power Model Overview Type Number ADS Model ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLD6G22L-50 BLD6G22LS-50 BLF1043 BLF1046 BLF145 BLF147 BLF174XR	Original	26-Nov-13 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600 BLC8G24LS-240AV BLC8G27LS-160AV BLC8G27LS-240AV BLF188XRS BLF574XR,112	PDF

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BLF8G20L Price and Stock

Ampleon BLF8G20LS-200V

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Rochester Electronics LLC BLF8G20LS-230VJ

Ampleon BLF8G20LS-230VU

Rochester Electronics LLC BLF8G20LS-230VU

BLF8G20L Datasheets (41)

BLF8G20L Datasheets Context Search

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RO4350B max current

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J37 transistor

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transistor TO-220 Outline Dimensions

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Bv 42 transistor

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transistor f1 j39

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transistor SMD g 28

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BLF8G20LS-260A

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UPC8236

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BA 7891 NG

BLF188XRS