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    Untitled

    Abstract: No abstract text available
    Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Thin silicon nitride Si3N4 films deposited using plasma-enhanced


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    Untitled

    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


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    ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    Abstract: No abstract text available
    Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have


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    PDF 01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

    blonk

    Abstract: No abstract text available
    Text: LTR G1 Tetlschniff : C - REVISION RECORD DATE REVISED PER ECO-11-005294 13APR11 Name HMR C 4, 65 t& 5 Schnitt : A ' A Schnitt : B - B , WftR f i f i - 9094-2 < 3 ,9 TI "öl Drahtgröfienbereich : 0,5 r 1,0 mm1 L e itu n g s q u e rs c h n itt in m m 2 CROSS-SECTION IN mm*


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    PDF ECO-11-005294 13APR11 blonk

    AR95X

    Abstract: AZA MARKING CODE AR35 MARKING ALF A-R marking
    Text: S TAÏWAN AR35 SERIES SEMICONDUCTOR 35.0 AMPS. High Current Button Rectifiers RoHS COMPLIANCE AR Features P la s lic m a te r ia l u s e d c a r r ie s U n C e rw ritB rs I M o ra to ry C lassification 94V-0 l o w cost construction u tilising void-free molded


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    PDF MIL-STD-202. 11PWll" AR95X AZA MARKING CODE AR35 MARKING ALF A-R marking

    SN7401

    Abstract: SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407
    Text: Series 64N and 64LN These devices have identical characteristics to Series 74N or Series 74LN respectively but are guaranteed over the temperature range of - 40° C to +85° C Refer to the appropriate 74 Series data sheet for parameters. G E N E R A L IN F O R M A T IO N A B O U T T T L IN T E G R A T E D C IR C U IT S


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    PDF 54H/74H, 4L/74L. Chiana56 SN7401 SN7449 vogt IL 050 321 31 01 VOGT 406 69 74L95 SN74L00 TME 87 SN6407

    TDK Power Supply MRW

    Abstract: K-Line L line tda9151 TDA9151B
    Text: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification


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    PDF TDA9151B 16-bit 7110flEb G7fi21ci TDK Power Supply MRW K-Line L line tda9151 TDA9151B

    Untitled

    Abstract: No abstract text available
    Text: m > CD CD O —I 5 g $ rm K to O > _ 73 $£ 5 è T3 OJ Ji > w » 1 £ MICRO-CHANGE ’8 0 ’ SERIES M ALE/M ALE PORTABLE CONNECTOR LEAD o H (-H <J M YE LLO W COMPOUND 3 If O P IN 5 f H PIN 2 -CABLE 1 PIN 4 PIN 5 3, 4 OR 5 CORE O Z " ° =r 33Ï -HO I/) _ ~0


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    SN7441

    Abstract: 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p
    Text: TTL Integrated Circuits Catalog from Texas Instruments 1 August 1969 T e x a s In s t r u m e n t s IN C O R P O R A T E D P O S T O F F IC E B O X 5 0 1 2 • D ALLAS. TEXAS 75222 GENERAL INFORMATION INDEXES Numerical • Functional • Cross-Reference TTL APPLICATION REPORTS


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    PDF 54H/74H 54L/74L SN7441 74L78 Sw 7441Aj SN7401 SN7449 7475n itt u6a9601 N8490 National Semiconductor Linear Data Book c2003p

    Untitled

    Abstract: No abstract text available
    Text: Preliminary specification Philips Sem iconductors Programmable deflection controller TDA9151B FE A T U R E S G en eral U • 6.75, 13.5 an d 27 M H z c lo c k fre q u e n c y II m ! BUS] • Few e xte rn a l c o m p o n e n ts • S y n c h ro n o u s logic


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    PDF TDA9151B 16-bit 9151B MMA72A

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541

    A101

    Abstract: No abstract text available
    Text: 3114 Series □upnn 2.0m m Flex Shroud Header Material: Housing: High Temperature Plastic UL94V-0. Contacts: Brass. Electrical Characteristics: Current Rating:2 AMP. Dielectric Withstanding VoltageAC 1000V For 1 minute. Insulator Resistance: 1000MQmin. at DC 500V.


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    PDF UL94V-0. 30mQmax. 100mA. A101

    SECAM Encoders

    Abstract: 1470 LM TDA4510 TDA8501 nf03 SDIP32 TDA8505 UKA460 MKM73-1
    Text: INTEGRATED CIRCUITS % S H IE T TDA8505 SECAM encoder Preliminary specification Supersedes data of May 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS • I 7110fl2b 007M533 A3? PHILIPS Philips Semiconductors Preliminary specification


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    PDF TDA8505 7110fl2b 007M533 SECAM Encoders 1470 LM TDA4510 TDA8501 nf03 SDIP32 TDA8505 UKA460 MKM73-1

    UKA720

    Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
    Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller


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    PDF TDA9150B 711002b 16-bit 7110fl2b UKA720 TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555

    CEC4L-03C

    Abstract: 125L 302G 303G 304G 307G FR301G FR307G
    Text: E FR301G - FR307G TAIW AN SEMICONDUCTOR 3.0 A M PS . G lass Passivated Fast Recovery R ectifiers RoHS DQ-201AD C O M P L IA N C E -T J - 1.0 :25.1 :- .TùTWt MIN. Features ❖ r_ l G lass passivated chip junction. High efficiency. Low VF <• High c u rre n t c a p a b ility


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    PDF FR301G FR307G DQ-201AD MIL-5TD-202, CEC4L-03C 125L 302G 303G 304G 307G FR307G