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    BM2741M Search Results

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    1400

    Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
    Text: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)


    OCR Scan     		PDF bM2741M NE202 NE202XX) NE202XX-1 NE20248) NE20283A) 1400 NE202 circuit NE20200 NE20248 NE20283A NE202XX W2603

    al 232 nec

    Abstract: NE64400 NE644 NE64408 S21E
    Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors


    OCR Scan     		PDF b427414 NE64400 NE64408 NE644 gain60 al 232 nec NE64408 S21E

    1SS105

    Abstract: 1SS105A 1SS11 1SS11-3G diode 5f ND5051-3G ND5052-3G ND5111-3G 1SS105A3G 3g marking
    Text: N E C / C A L IF O R N I A 1=427414 G D D n i O 1SE D NEC T-cî-ùl A G aA s EPITAXIAL SCH O TTKY B A R R IE R DIO DE ND5000 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • LOW C O N V E R SIO N L O S S The ND5000, GaAs Epitaxial Schottky Barriercliodes, offer low


    OCR Scan     		PDF 14E7414 ND5000 ND5000, ND5111, ND5112, ND5113 ND5112 ND5111 1SS105 1SS105A 1SS11 1SS11-3G diode 5f ND5051-3G ND5052-3G ND5111-3G 1SS105A3G 3g marking

    2SC2150

    Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
    Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use


    OCR Scan     		PDF bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42

    PC1675G

    Abstract: 1675P
    Text: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G


    OCR Scan     		PDF b4E7414 G002b4b UPC1675B UPC1675G UPC1675P OT-143) UPC1675B, UPC1675 PC1675G 1675P

    81E TRANSISTOR

    Abstract: 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475 NEM080481-12 NEM081081-12
    Text: NEC/ CALIFORNIA NEC SbE ]> • b4B7414 0002552 22b — CLASS C, 800-960 MHz, 12 VOLT POWER TRANSISTOR INECC \ ' Z Z -I s NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 FEATURES DESCRIPTION AND APPLICATIONS • LOW OPERATING VOLTAGE: 13.5 V NEC’s NEM0800 series of NPN epitaxial UHF power


    OCR Scan     		PDF b427414 0002SS2 NEM080481-12 NEM081081-12 NEM082081B-12 NEM084081B-12 NEM0800 NEM080481E-12 NEM081081E-12 81E TRANSISTOR 2SC3282 2SC3282A NEC J 302 2SC3283A 2SC3283 J349 J475

    NE050214-12

    Abstract: 2SC2672 bM27414
    Text: N E C / SbE CALIFORNIA NEC bM5?mM D 00G2S37 TIT BINECC - T '^ 3 - 0 5 CLASS C, 500 MHz, 12 VOLT POWER TRANSISTOR NE050214-12 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C • GOOD RF PERFORMANCE SYMBOLS PARAMETERS UNITS RATINGS • HIGH EFFICIENCY: 65% TYP.


    OCR Scan     		PDF 00G2S37 NE050214-12 NE050214-12 bM27414 0GG253Ã 2SC2672