BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2N6041
2SBS72A
2SB939A
2SB951A
BOX54B
B0266A
B064S
B0700
B0700A
BOX34B
bot64a
sgs-ates transistors
bot64
MJ0117
BOW94B
BOV64
MJ-01
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PDF
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AO-A15
Abstract: 8l35 MCM72F6 MCM72F7
Text: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory
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MCM72F6/D
512KB
MCM72F6
MCM72F7
512KB)
Box5405,
l-303-675-21400
rl-600-441-2447
AO-A15
8l35
MCM72F6
MCM72F7
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PDF
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AN569
Abstract: MMDF6N03HD MMDF6N03HDR2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order thisdocument by MMDF6N03HD/D DATA E Advance /formation Medium Power Surface Mount Products TMOS Dual N-ChanneI FieBdEffect Transistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s
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MMDF6N03HD/D
Box54W,
30H7G21W
Ok7741846
AN569
MMDF6N03HD
MMDF6N03HDR2
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MCM72F6A
Abstract: MCM72F7A max2781 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MCM72F6ND DATA 512KB and 1MB Synchronous Fast Static RAM Module The MCM72F6A 512KB is configured as 64K x 72 bits and the MCM72F7A (1 MB) is configured as 128K x 72 bits. Both are packaged in a 168-pin dualin–line memory module DIMM. Each module uses Motorola’s 3.3 V 64K x 18 bit
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Original
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MCM72F6ND
512KB
MCM72F6A
512KB)
MCM72F7A
168-pin
Box5405,
l-303-675-21400r
l-800-441-2447
ONLY1-800-774-1848
MCM72F6A
MCM72F7A
max2781
Nippon capacitors
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PDF
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80244C
Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Text: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0
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bot64
Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091
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MJE1091
MJE2090
MJE2091
BOW64A
BOW24A
220AB
bot64
B0698
BOW84
B064S
BOW94A
bot62
2ns04
BOX54A
11J2
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PDF
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box54c
Abstract: BOX34C b0336 BOW84C B0650 2SB1100K 2SB1098L BOW24C 2SB1099 2SB897
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max tf Max (s) (s) TOper Max (Oe) Package Style PNP Darlington Transistors, (Co nt' d) 5 10 B0262B B0262B B0682 2SB1098M 2SB1098L
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Original
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B0262B
B0682
2SB1098M
2SB1098L
2SB1098K
2SB1227
2SB885
SGS127
box54c
BOX34C
b0336
BOW84C
B0650
2SB1100K
BOW24C
2SB1099
2SB897
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PDF
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y148 amplifier
Abstract: 4504B L1025 MC145170D1 phas locked loop Nippon capacitors MCI 4504B 1/y148 amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MC145170-1/D DATA ~ Advance Information PLL Frequency Synthesizer with Serial 9nterface CMOS The MC1 451 70–1 is a singl+chip synthesizer capable of direct usage in the MF, HF, and VHF bands. A special architecture makes this PLL the easiest to
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Original
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MC145170-1/D
Box5405,
OW4l-2447
24M609
OW77A184S
MC1451
y148 amplifier
4504B
L1025
MC145170D1
phas locked loop
Nippon capacitors
MCI 4504B
1/y148 amplifier
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PDF
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BOX53C
Abstract: Bow94c box33c BOW94CH B0X54C BDXS38 BOX54B B0X54 BU508 225/B0X54C
Text: SELECTION GUIDE BY PART NUMBER DEVICE TYPE V cbo V ceo N PN PNP BD909 BD910 BD911 BD912 BDW51C BDW52C BDW83C BDWB4C BDW93B BDW93C BDW93CP1 BÎHS941B BOW94C BOW94CH e m m BOX33C BDX34B BDX34C BDX53A BDXS38 BD^33BFI BOX53C BDX53F BOX54BFI B0X54C BDX54F BDX67C
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OCR Scan
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O-220
O-22G
BD909
BD910
BD911
BD912
BDW51C
BDW52C
BOX53C
Bow94c
box33c
BOW94CH
B0X54C
BDXS38
BOX54B
B0X54
BU508
225/B0X54C
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PDF
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bdx548
Abstract: B0X54
Text: BDX54, BOX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited, UK_ MAY 1989 - R E V IS E O M A R C H 1997 • Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C • 60 W at 25°C Case Temperature
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OCR Scan
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BDX54,
BOX54A,
BDX54B,
BDX54C
BDX53,
BDX53A,
BDX53B
BDX53C
O-220
BDX54
bdx548
B0X54
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PDF
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MC74VHC32
Abstract: a488 DL203 MC74VHCXXD MC74VHCXXDT MC74VHCXXM VQC 10 D Y3
Text: L M OTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2-Input OR G ate M C74VH C32 The MC74VHC32 is an advanced high speed CMOS 2-input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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OCR Scan
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MC74VHC32
Box5405,
Colorado80217
303-675-2140or
51Ting
MC74VHC32/D
DL203
a488
DL203
MC74VHCXXD
MC74VHCXXDT
MC74VHCXXM
VQC 10 D Y3
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PDF
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2N6059 MOTOROLA
Abstract: 2N6058 MOTOROLA
Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —
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OCR Scan
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2N6052/D
2N6058
2N6052,
2N6059
2N6052*
2N6059*
Box5405,
2N6059 MOTOROLA
2N6058 MOTOROLA
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PDF
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bdx538
Abstract: BOX53C transistor box54c box54c Transistors BDX538 box53b box54 B0X53C BOX53 BOX53A
Text: MO TO RO LA SC 12E D I b3b?BS4 0004703 1 I X S T RS/R F • " NPN B0X53 BDX53A BDX53B BDX53C MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEM ENTARY SILICON TRANSISTORS DA RLIN G TO N 8 AMPERE .d e s ig n e d fo r general-purpose a m p lifie r and low-speed sw itc h in g
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OCR Scan
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B0X53
BDX53A
BDX53B
BDX53C
BDX54
BDX54A
BDX54B
BDX54C
BDX53,
X53Ai
bdx538
BOX53C
transistor box54c
box54c
Transistors BDX538
box53b
box54
B0X53C
BOX53
BOX53A
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PDF
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B507D
Abstract: BD95280 A940 A614-Y a968 B507E A968B A614 CSA6140 bs340
Text: Electrical Characteristics Ta*25‘C, Unless OthenrfM SpadfM Maximum Ritingi Type No. P» (W) (V) Mm flTc=25‘c VcE (V) t (A) c* <pn Max f, (MHz) Typ Min vcao (V) Min V C£0 2N6107 80 70 5 40 7 * 100 75 30 150 2.3 2 7 4 4 3.5 1 7 2 250 10 500 2N6109 60
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OCR Scan
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2N6107
2N6109
TIP115
TIP116
TIP117
TIP125
TIP126
TIP127
TIP135
TIP136
B507D
BD95280
A940
A614-Y
a968
B507E
A968B
A614
CSA6140
bs340
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PDF
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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OCR Scan
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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PDF
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