Untitled
Abstract: No abstract text available
Text: ¿¿F” MPSA12 1 The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of NPN S IL IC O N DARLINGTON TRAN SISTO R TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms.
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MPSA12
PSA12
500mA
625mW
100KHz
Boxt9477,
3-898M4
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BF397
Abstract: No abstract text available
Text: BF397 SSî! WíSs. PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage
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BF397
BF397
O-92F
625mW
100mA
10jiA
100mA
Boxi9477,
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Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-gg . . . 6 0 V • Low Level, 'Low Noise Am plifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
BOXt9477
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Untitled
Abstract: No abstract text available
Text: M BF397 PNP SILICON TRANSISTOR T O -9 2 F BF397 is PNP silicon transistor designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage VCBO 90V VCEO 90V 6V 625mW 100mA VE BO Ptot Emitter-Base Voltage Total Power Dissipation
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BF397
BF397
625mW
100mA
10jiA
100uA
100mA
Boxt9477,
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PDF
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Untitled
Abstract: No abstract text available
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES APPLICATIONS • High Breakdown Voltage BV^-^q . . . 6 0 V • Low Level, 'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A MECHANICAL OUTLINE TO-92A ■ Audio Through High Frequency Ranges
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PN2483,
PN2484
O-92A
N2484
BOXt9477
8-e98EM
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PDF
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Untitled
Abstract: No abstract text available
Text: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW
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BFX85
BFX85
800mW
150mA
500mA
100mA*
20MHz
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bc536
Abstract: bc537
Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM PLEMENTARY TO THE PNP TYPE BC527, BC528
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BC537Â
BC538
BC537,
BC527,
BC528
O-92A
BC537
BC536
100mA
bc536
bc537
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2N2222
Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.
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2N2222
PN2222
2N2222A
PN2222A
2N2222,
2N2222A,
PN2222,
2N2907,
2N2907A,
FN2222
2n2222 micro electronics
pn2222 2n2222
FN2222A
PN2222A le
tr 2n2222
PN2907
T092
2N2222-PN2222
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E3510
Abstract: N248 30MHZ PN2483 PN2484
Text: PN2483, PN2484 LOW LEVEL, LOW NOISE NPN SILICON PLANAR TRANSISTORS FEATURES A P PLICA TIO N S • High Breakdown Voltage BV^-gQ . . . 60V • Low Level,'Low Noise Amplifier • High Gain hpg . . . 2 0 0 @ 500m>A ■ Audio Through High Frequency Ranges • Low Noise N.F. . . . 3 dB
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PN2483,
PN2484
O-92A
N2484
50J/A,
30MHZ
BOXt9477
E3510
N248
PN2483
PN2484
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Untitled
Abstract: No abstract text available
Text: PN3641 PN3642 PN3643 NPN SILICON TRANSISTORS TO-92A PN3641, PN3642 & PN3643 are NPN silicon planar transistors designed for small signal general purpose amplifiers and switches. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage
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PN3641
PN3642
PN3643
O-92A
PN3641,
PN3643
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PDF
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BC537
Abstract: BC538 BC527 BC528
Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM PLEMENTARY TO THE PNP TYPE BC527, BC528
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BC537,
BC538
BC527,
BC528
O-92A
BC537
100mA
BC527
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100khz 5v transistor npn
Abstract: MPSA12
Text: NPN S IL IC O N DARLINGTON TRAN SISTO R The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms. ABSO LU TE MAXIMUM RATIN GS
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MPSA12
500mA
625mW
100pA
100KHz
100khz 5v transistor npn
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