BD401
Abstract: bq4015 bq4015Y
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
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Original
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bq4015/Y
512Kx8
bq40MS)
32-pin
34-pin
BD401
bq4015
bq4015Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
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Original
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bq4015/Y
512Kx8
32-pin
34-pin
bq40MS)
|
PDF
|
BD4015
Abstract: BD401 bq4015 bq4015Y bq4013
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
bq40MS)
32-pin
34-pin
BD4015
BD401
bq4015
bq4015Y
bq4013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
32-pin
34-pin
bq40MS)
|
PDF
|
bq4015
Abstract: bq4015Y
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
bq40MS)
32-pin
34-pin
bq4015
LCR34
bq4013
bq40MS.
bq4015
bq4015Y
|
PDF
|
BD4015
Abstract: No abstract text available
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
32-pin
34-pin
bq40MS)
BD4015
|
PDF
|
bq4015
Abstract: bq4015Y
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
bq40MS)
32-pin
34-pin
bq4015
bq4015Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: bq4015/Y 512Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power - Snap-on power-source for lithium battery backup is unconditionally write-protected to prevent an inadvertent write operation. - Replaceable power-source part number: bq40MS
|
Original
|
bq4015/Y
512Kx8
32-pin
34-pin
bq40MS)
|
PDF
|
bq4013
Abstract: bq4013Y
Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application
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Original
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bq4013/Y
128Kx8
32-pin
34-pin
bq40MS)
576-bit
bq4013
bq4013Y
|
PDF
|
bq4013
Abstract: bq4013Y
Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features ➤ Data retention for at least 10 years without power ➤ Automatic write-protection during power-up/power-down cycles ➤ Conventional SRAM operation, including unlimited write cycles ➤ Internal isolation of battery before power application
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Original
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bq4013/Y
128Kx8
32-pin
34-pin
bq40MS)
576-bit
static91
bq4013
LCR34
bq4013
bq4013Y
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PDF
|
Untitled
Abstract: No abstract text available
Text: bq 4015 /Y U IM IT R O D E 512Kx8 Nonvolatile SRAM Features >• D a t a r e t e n t i o n fo r a t l e a s t 10 y e a rs w ith o u t pow er >• A utom atic w rite-protection d uring power-up/power-down cycles >• C o n v e n tio n a l SR A M o p e ra tio n ,
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OCR Scan
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512Kx8
bq40em
bq4013
bq40M
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PDF
|
Untitled
Abstract: No abstract text available
Text: bq4 0 1 3 /Y U IM IT R O D E 128Kx8 Nonvolatile SRAM Features >• D a t a re te n tio n fo r a t le a s t 10 y e ars w ithout pow er >• Automatic write-protection during power-up/power-down cycles >• C o n v e n tio n a l SR A M o p e ratio n , including u n lim ited w rite cycles
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OCR Scan
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128Kx8
34-pin
bq40M
bq4013
|
PDF
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