Untitled
Abstract: No abstract text available
Text: benchuarú hicroelec bûE D • 137flfln 0GG1575 015 H B E N bq4115 Advance Information f e j BENCHM ARQ . 512Kx8 NV Pseudo SRAM Features General Description >- Data retention in the absence of power The CMOS bq4115 is a nonvolatile pseudo static RAM organized as
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137flfln
0GG1575
bq4115
512Kx8
bq4115
512Kx
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Untitled
Abstract: No abstract text available
Text: _ bq4115Y 512Kx8 NV Pseudo SRAM Features General Description > D ata retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery source provide reliable nonvolatility
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bq4115Y
512Kx8
000242b
bq4115
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Untitled
Abstract: No abstract text available
Text: Advance Information BENCHMARQ bq4115 512Kx8 NV Pseudo SRAM Features General Description > D ata retention in the absence of power The CMOS bq4115 is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery
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bq4115
512Kx8
bq4115
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Untitled
Abstract: No abstract text available
Text: BENCHMARQ_ b q 4 1 15 Y 512Kx8 NV Pseudo SRAM Features General Description >• D ata retention in th e absence of power The CMOS bq4115Y is a nonvolatile p seu d o sta tic RAM o rg a n iz e d as 512K words by 8 bits. T he integral control circuitry and backup b atte ry
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512Kx8
bq4115Y
bq4115
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CE 65 M
Abstract: No abstract text available
Text: B E N C H M A R Q _ b q 4 1 1 5 Y 512Kx8 NV Pseudo SRAM Features General Description >• Data retention in the absence of power The CMOS bq4115Y is a nonvolatile pseudo static RAM organized as 512K words by 8 bits. The integral
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512Kx8
bq4115Y
bq4115
512Kx
QQQ37n
CE 65 M
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Untitled
Abstract: No abstract text available
Text: bq4115Y BENCHMARQ 512Kx8 NV Pseudo SRAM Features General Description >- D ata retention in th e absence of power The CMOS bq4115Y is a nonvolatile pseudo sta tic RAM organized as 512K words by 8 bits. The integral control circuitry and backup battery source provide reliable nonvolatility
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bq4115Y
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bq4115
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charger NiMh 4 ch
Abstract: clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note bq4013 BQ4025
Text: Nonvolatile SRAM s Benchmarq’s nonvolatile static random-access memories NVSRAMs integrate—in a single-DIP package—extremely low standby power SRAM, nonvolatile control circuitry, and a long-life lithium cell. The NVSRAMs combine secure nonvolatility (more than 10 years in the
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bq40l0
bq40lI
bq4013
bq40I4
bq4024
bq4015
bq4025
bq4115
bq40l6
bq4017
charger NiMh 4 ch
clock ic dip pack
bq20xx
soic 28
lead acid battery charger module
gas gauge
"lead acid"
BQ2002* NiMH charger application note
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