27S12
Abstract: 27128 memory nsc600
Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and
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0112b
27C64
536-Bit
28-pin
32-pin
2-26A
39M131931
27S12
27128 memory
nsc600
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93C86L
Abstract: SC86A
Text: S e m i c o n d u c t o r September 1995 NM93C86LZ/C86ALZ 16,384-Bit Serial Interface, Low Voltage, Zero Power CMOS EEPROM MICROWIRE Synchronous Bus General Description Features The NM93C86LZ/C86ALZ is 16,384 bits of CMOS non-vol atile, electrically erasable memory available in either 1024
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NM93C86LZ/C86ALZ
384-Bit
16-bit
NM93C86LZ)
NM93C86ALZ)
bS0112ti
93C86L
SC86A
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Untitled
Abstract: No abstract text available
Text: 57E D bSOllEb GGbb431 351 H N S C 3 NATL SEtllCOND MEMORY " F lS -A S -O S DS78C120/DS88C120 Dual CMOS Compatible Differential Line Receiver General Description Features The DS78C120 and DS88C120 are high performance, dual differential, CMOS compatible line receivers for both bal
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GGbb431
DS78C120/DS88C120
RS232-C,
RS422
RS423,
MIL188-114
DS78C120
DS88C120
RS-423
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dp8304
Abstract: B794 DP8307A DP8307AN generator speed control circuit 24v input dp7304b
Text: DP83Û7A 33 National ÆÆ Semiconductor DP8307A 8-Bit TRI-STATE Bidirectional Transceiver Inverting General Description Features The DP8307A is a high speed Schottky 8-bit TRI-STATE bidirectional transceiver designed to provide bidirectional drive for bus oriented microprocessor and digital communi
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DP8307A
DP6303A
bS0112ti
0070b43
dp8304
B794
DP8307AN
generator speed control circuit 24v input
dp7304b
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