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    Transistors 13005 D

    Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
    Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use


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    PDF tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K

    TRIMMER cap no-2222 809 07015

    Abstract: BD433 BLW77
    Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­


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    PDF BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77

    BFY51

    Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
    Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A


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    PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100

    BD204

    Abstract: BD202 BDX78 BD201 80204 BD203 BDX77 IEC134
    Text: BD202 BD204 BDX78 -/V . SILICON EPITAXIAL-BASE POWER TRANSISTORS PNP transistors in a plastic envelope. With their npn complements BD201, BD203, and BDX77,they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 4 Î Ï or


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    PDF BD202 BD204 BDX78 BD201, BD203, BDX77 BD202 BD204 O-220. BDX78 BD201 80204 BD203 IEC134

    philips v10-20

    Abstract: OM2061
    Text: N AMER PH ILIP S/ D IS C R ET E ^53=131 5SE D G Q 1Ô 477 =1 I OM2061 T -'W ~ 0 ° l-0 \ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-fiim substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV systems, and as generalpurpose amplifier for v.h.f. and u.h.f. applications.


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    PDF OM2061 7ZB3782 7Z83781 OM2Q61 fahS3131 T-74-09-01 7ZS2899 7Z82898 100-MHz; philips v10-20 OM2061

    Untitled

    Abstract: No abstract text available
    Text: DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice, bbS3T31 0020343 7 • | CNG40 N AflER PHILIPS/DISCRETE 2SE D _ GaAIAs, RESISTOR-DARLINGTON, HIGH VOLTAGE OPTOCOUPLER The CNG40 is an optocoupler in a dual-in-line DIL 6-pin plastic SOT231 envelope. It consists o f a


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    PDF bbS3T31 CNG40 CNG40 OT231 Q050A47 T-41-85

    BDT42CF

    Abstract: BDT41BF BDT41F BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt
    Text: ^ 5 3 1 3 1 N AMER PHILIPS/DISCRETE H 5 E D 0 0 1 1 7 2 1 I I T BDT41F;41AF; BDT41BF;41CF r-3 ^ -0 ? SILICON EPITAXIAL POWER TRANSISTORS w in a «ÏOT186 e n v e lo p e with an electrically insulated NPN silicon epitaxial power transistors, each m a SOT186 enve p


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    PDF BDT41F BDT41BF enT186 OT186 BDT42AF, BDT42BF, BDT42CF. BDT42F, BDT42CF BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt