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    BSI BS62LV4001SC-70

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    BS62LV4001SC Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS62LV4001SC Brilliance Semiconductor Low Power/Voltage CMOS SRAM 512K x 8 bit Original PDF
    BS62LV4001SC-100 Brilliance Semiconductor Low Power/Voltage CMOS SRAM 512K x 8 bit Original PDF
    BS62LV4001SC-70 Brilliance Semiconductor Low Power/Voltage CMOS SRAM 512K x 8 bit Original PDF

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    BS62LV4001

    Abstract: BS62LV4001EC BS62LV4001EI BS62LV4001PC BS62LV4001PI BS62LV4001SC BS62LV4001SI BS62LV4001STC BS62LV4001TC BS62LV4001TI
    Text: BSI Low Power/Voltage CMOS SRAM 512K X 8 bit „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Low power consumption Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 45mA (Max.) operation current


    Original     		PDF 100ns BS62LV4001 BS62LV4001 R0201-BS62LV4001 BS62LV4001EC BS62LV4001EI BS62LV4001PC BS62LV4001PI BS62LV4001SC BS62LV4001SI BS62LV4001STC BS62LV4001TC BS62LV4001TI

    BS62LV4001

    Abstract: BS62LV4001EC BS62LV4001PC BS62LV4001RC BS62LV4001SC BS62LV4001STC BS62LV4001STI BS62LV4001TC BS62LV4001TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 8 bit • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options „ FEATURES • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very Low power consumption Vcc = 3.0V C-grade: 20mA Max. operating current


    Original     		PDF 100ns BS62LV4001 -40oC R0201-BS62LV4001 BS62LV4001 BS62LV4001EC BS62LV4001PC BS62LV4001RC BS62LV4001SC BS62LV4001STC BS62LV4001STI BS62LV4001TC BS62LV4001TI