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    C 20N50 Search Results

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    C 20N50 Price and Stock

    TTM Technologies C20N50Z4

    RF ATTENUATOR 50OHM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C20N50Z4 Reel 1,000 1,000
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    • 1000 $2.0125
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    C20N50Z4 Digi-Reel 1,000 1
    • 1 $4.88
    • 10 $3.726
    • 100 $2.9572
    • 1000 $2.58934
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    C20N50Z4 Cut Tape 1,000 1
    • 1 $4.88
    • 10 $3.726
    • 100 $2.9572
    • 1000 $2.58934
    • 10000 $2.58934
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    Richardson RFPD C20N50Z4 1,000
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    • 1000 $2.12
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    TTM Technologies C20N50Z4B

    SMD TERM 20W 50 OHM 6GHZ 1210
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    DigiKey C20N50Z4B Cut Tape 245 1
    • 1 $5.31
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    • 100 $3.2242
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    C20N50Z4B Digi-Reel 245 1
    • 1 $5.31
    • 10 $4.055
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    C20N50Z4B Reel 1,000
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    Richardson RFPD C20N50Z4B 306 1,000
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    C20N50Z4B 1,000
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    Vishay Intertechnologies IRFC20N50AB

    MOSFET N-CHANNEL 500V - Bulk (Alt: IRFC20N50AB)
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    Avnet Americas IRFC20N50AB Bulk 1,080
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    Anaren Microwave C20N50Z4

    High Frequency/RF Resistors DC-2.3GHz 50 ohms 20 Watts -50C +200C
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    Mouser Electronics C20N50Z4 1,000
    • 1 $4.52
    • 10 $3.73
    • 100 $2.9
    • 1000 $2.01
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    Amphenol Positronic MC120N-50

    D-Sub Contacts
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    Mouser Electronics MC120N-50 5
    • 1 $5.19
    • 10 $4.72
    • 100 $4.16
    • 1000 $3.01
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    Find more C 20N50 price and stock on Findchips.com

    C 20N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C20N50Z4 Anaren RF/IF and RFID - Attenuators - RF ATTENUATOR 50OHM Original PDF

    C 20N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N50E

    Abstract: MOSFET 20n50e MP20N
    Text: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		PDF MS5F6837 FMP20N50E H04-004-05 H04-004-03 20N50E MOSFET 20n50e MP20N

    fma20n50e

    Abstract: 20N50E
    Text: DATE DRAWN Mar.-29-'07 CHECKED Mar.-29-'07 CHECKED Mar.-29-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		PDF MS5F6838 FMA20N50E H04-004-05 H04-004-03 fma20n50e 20N50E

    20N50D

    Abstract: 20n50
    Text: High Voltage MOSFET N-Channel, Depletion Mode VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D IXTT 20N50D Preliminary Data Sheet TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS


    Original     		PDF 20N50D O-247 O-268 20N50D 20n50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information VDSS = 500 V = 20 A ID25 RDS on = 0.33 Ω IXTH 20N50D High Voltage MOSFET N-Channel, Depletion Mode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 20N50D O-247 flam00

    20n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 20N50 Preliminary Power MOSFET 20A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The C 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current,


    Original     		PDF 20N50 20N50 20N50L-T3P-T 20N50G-T3P-T QW-R502-895

    lm 12100 A 12v

    Abstract: IC LM 393 N equivalent transistor K 3634 UC3842 MOTOROLA MC34262P EE-25 transformer transformer 400V litz wire 45 awg lm 293 iz 5 similar
    Text: MC34262 MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup


    Original     		PDF MC34262/MC33262 lm 12100 A 12v IC LM 393 N equivalent transistor K 3634 UC3842 MOTOROLA MC34262P EE-25 transformer transformer 400V litz wire 45 awg lm 293 iz 5 similar

    bpl color tv Circuit Diagram schematics

    Abstract: Solar Garden Light YX 805 4 pin 7-level cascaded H-bridge inverter hardware design TL494 car charger schematic diagram LG color tv Circuit Diagram schematics atx power supply UC3842 diagram sfe10.7mhy uln2803 spice model UVC3101 schematic LG TV lcd backlight inverter
    Text: Volumes II I Alphanumeric Index and Cross References 1 I Amplifiers and Comparators 2 I Power Supply Circuits 3 I Power/Motor Control Circuits 4 II Voltage References 5 II Data Conversion 6 II Interface Circuits 7 II Communication Circuits 8 II Consumer Electronic Circuits


    Original     		PDF LM2575 MC78BC00 MC78FC00 MC78LC00 MC33154 MC33264 DL128/D* DL128/D bpl color tv Circuit Diagram schematics Solar Garden Light YX 805 4 pin 7-level cascaded H-bridge inverter hardware design TL494 car charger schematic diagram LG color tv Circuit Diagram schematics atx power supply UC3842 diagram sfe10.7mhy uln2803 spice model UVC3101 schematic LG TV lcd backlight inverter

    intel 845 MOTHERBOARD pcb CIRCUIT diagram

    Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
    Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL128/D Mar-2002 r14525 DL128 intel 845 MOTHERBOARD pcb CIRCUIT diagram 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a

    20n50

    Abstract: No abstract text available
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMP20N50ES MS5F7229 H04-004-05 H04-004-03 20n50

    20N50ES

    Abstract: 20n50 20n50e FMV20N50ES electric tf 216 10a 250v
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMV20N50ES MS5F7230 H04-004-05 H04-004-03 20N50ES 20n50 20n50e FMV20N50ES electric tf 216 10a 250v

    20n50e

    Abstract: 20N50ES
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMH20N50ES MS5F7232 H04-004-05 H04-004-03 20n50e 20N50ES

    20n50e

    Abstract: 20N50ES 20n50 FMB20N50ES marking code SJ transistors FMI20N50E
    Text: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMI20N50ES FMC20N50ES FMB20N50ES MS5F7231 H04-004-03 20n50e 20N50ES 20n50 FMB20N50ES marking code SJ transistors FMI20N50E

    MC34262D

    Abstract: of ic uc3842 SOIC-8 MC34262 MC33262 TDA4817 EE-42 MC33262 datasheet MC33262P MUR130 SG3561
    Text: MC34262, MC33262 Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off−line power converter applications. These integrated circuits feature an internal startup timer for stand−alone applications,


    Original     		PDF MC34262, MC33262 MC34262/MC33262 MC34262/D MC34262D of ic uc3842 SOIC-8 MC34262 MC33262 TDA4817 EE-42 MC33262 datasheet MC33262P MUR130 SG3561

    20n50

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • TO-3P L o w e r R d s o n Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e


    OCR Scan     		PDF SSH20N45/20N50 SSH20N45 SSH20N45 SSH20N50 SSM20N45/20N50 20n50

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Text: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


    OCR Scan     		PDF 0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A

    20N50

    Abstract: ssh20n50 c 20n50 SSH20N45 20N50 MOSFET SSH20N45/20N50
    Text: N-CHANNEL POWER MOSFETS SSH20N45/20N50 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH20N45/20N50 SSH20N45 SSM20N45/20N50 20N50 ssh20n50 c 20n50 20N50 MOSFET SSH20N45/20N50

    ssh20n50

    Abstract: ssm20n45 20N45 2on50 20n50
    Text: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50


    OCR Scan     		PDF SSM20N45/20N50 SSH20N45/20N50 000S3 SSM20N45 SSM20N50 SSM20N50 00GS435 ssh20n50 20N45 2on50 20n50

    PJ 986

    Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD
    Text: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs


    OCR Scan     		PDF IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD IGTH20N40D, IGTH20N50AD PJ 986 pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    10N50A

    Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
    Text: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode


    OCR Scan     		PDF IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD IGTH10N50AD 2CS-42 10N50A 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D

    20n50

    Abstract: MGP20N50 20N45 motorola v3e
    Text: MOTOROLA MGM20N45 MGM20N50 MGP20N45 MGP20N50 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s l a t : i S h e d 20 AM PERE N-CHANNEL TMOS GEMFET N-CHANNEL ENHANCEMENT-MODE SILICON GATE, INSULATED GATE BIPOLAR TRANSISTOR rC E on) = 0-27 O h m 4 5 0 a n d 5 0 0 V o lts


    OCR Scan     		PDF MGM20N45 MGM20N50 MGP20N45 MGP20N50 20n50 MGP20N50 20N45 motorola v3e

    20n50

    Abstract: 20N50A IXGH20N50 c 20n50
    Text: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s


    OCR Scan     		PDF IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20n50 20N50A c 20n50

    20N50A

    Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
    Text: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc


    OCR Scan     		PDF IXGH20N50, IXGM20N50, IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 20N50, 20N50A, 20N50A. 20N50A 20n50 f sss 20n60 sss 20n60

    MOSFET 20n50e

    Abstract: 20N50E motorola 20n50e gs 431 transistor
    Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS


    OCR Scan     		PDF MTW20N50E/D MTW20N50E 340K-01 MOSFET 20n50e 20N50E motorola 20n50e gs 431 transistor