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    003A

    Abstract: 2SC4603 2SC4603R
    Text: X SPECI F 1CAT 1ON DEVICE NAME : TYPE NAME : SPEC. No. : BIPOLAR TRANSISTOR 2 S C 4 6 0 3 R DATE Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DA TE DRAW N NAME APPROVED Fuji Electric CoJLtd CHECKED Y 0257-R-004a Ratings


    OCR Scan     		0257-R-004a 2SC4603F* 025T-R-003a 2SC4603R 0257-R-003a 003A 2SC4603 2SC4603R PDF

    D00373

    Abstract: GDG3737 A138
    Text: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi­ taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN


    OCR Scan     		05DM33Ã GDG3737 T-91-01 D00373 A138 PDF

    transistor 15c

    Abstract: No abstract text available
    Text: KSC2334 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED SWITCHING INDUSTRIAL USE T O -220 • Complement to KSA1010 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 1 50 1 00 7 7 15 3 .5 40 1.5 1 50 —5 5 ~ 1 50 V V V A A A W W °C “C Symbol Collector-Base Voltage


    OCR Scan     		KSC2334 KSA1010 C0LLEC70 transistor 15c PDF