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    C10A SCR Search Results

    C10A SCR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    29C10AJC Rochester Electronics LLC Replacement for AMD part number AM29C10AJC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    29C10ADM Rochester Electronics LLC AM29C10A - Microprogram Controller Visit Rochester Electronics LLC Buy
    29C10A-1JC Rochester Electronics LLC Replacement for AMD part number AM29C10A-1JC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    74LVC10A-000 Renesas Electronics Corporation TRIPLE 3INPUT POS NAND GA Visit Renesas Electronics Corporation

    C10A SCR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1602

    Abstract: C220D c220e 2N1604 c220b 2N1601 scr 106 C 2N1842-50 SCR C220D 25600
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information home | help | email Phase Control SCR's 7.4 - 25 Amp Military Product Products Quality Quote Request Value Added E-mail High Reliability *2N1771A-2N1778A and 2N2619A are available in Jan and Jantx Spec Sheet


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    PDF 2N1771A-2N1778A 2N2619A C220-2 2N1770-1778 2N1600A2N1604A 2N1842-50 2N1770A- 2N1846 2N1775A 2N1775 2N1602 C220D c220e 2N1604 c220b 2N1601 scr 106 C 2N1842-50 SCR C220D 25600

    S10BB

    Abstract: 5 kv
    Text: IRC series S10 Socket for Interface relay Type S10 1-pole, 1 connection level Logic wiring Integrated retaining clip and labelling space Coil bridge bar for A2, 11 Rated current 10 A Specifications Rated load Insulation – All terminals/DIN rail Contact terminals


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    PDF C10-A, C10-T, S10-BB E-28923 S10BB 5 kv

    B20G

    Abstract: RELECO C10A C10G
    Text: IRC series S10-M Socket for Interface relay Type S10-M I/O socket for IRC relays, 16A Logic connection , 2 x A2 Rated current 16 A Specifications Rated load Insulation – All terminals/DIN rail Contact / Coil terminals Cross-section of connecting wire – Single-wire


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    PDF S10-M V10-G, V10-E V10-R V10-A B20-G, B20-R B20-A E-28923 B20G RELECO C10A C10G

    zd1 1014

    Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
    Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky


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    PDF 110VAC ZPD40-512 zd1 1014 217F C10A C12A capacitor ceramic optocupler transistor MTBF

    1606-XLE120E

    Abstract: 1606-xle80e fuse t6.3a 1606-XLE240EP 1606-XLE240E 1606-XLE 1606-XL CONDENSADORES T6.3A AL system donner
    Text: 1 2 3 4 5 EN DE FR ES IT Instruction Manual Bedienungsanleitung Manual d'instructions Manual de instrucciones Manuale di Istruzione DC Power Supply DC Stromversorgung DC Alimentation d'Énergie DC Fuente De Alimentación DC Gruppo di alimentazione 6 PT Manual de Instruções


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    PDF 1606-XLE 1606-XLE80E, 1606-XLE120xx PN-22659 PU-360 38-10B 1606-XLE240xx 1606-XLE80E 1606-XLE120xx, 1606-XLE120E 1606-xle80e fuse t6.3a 1606-XLE240EP 1606-XLE240E 1606-XLE 1606-XL CONDENSADORES T6.3A AL system donner

    IEC60068-2-30

    Abstract: CS10 PU-360
    Text: 1 2 3 4 5 6 EN DE FR ES IT PT Instruction Manual Bedienungsanleitung Manual d'instructions Manual de instrucciones Manuale di Istruzione Manual de Instruções DC Power Supply DC Stromversorgung DC Alimentation d'Énergie DC Fuente De Alimentación DC Gruppo di alimentazione


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    PDF PU-360 0-10A 241-S1 IEC60068-2-30 CS10

    j1430

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field−Effect Transistor MRF372 MRF372R5 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372/D MRF372 MRF372R5 j1430

    MRF372

    Abstract: MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372/D MRF372 MRF372 MRF372D C14A 473 coilcraft d variable resistor 0224 25 ohm c7a series vishay capacitor RO3010

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372/D MRF372 MRF372/D

    balun 75 ohm

    Abstract: C14A RO3010 MRF372 c9ab
    Text: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372/D MRF372 balun 75 ohm C14A RO3010 MRF372 c9ab

    marking c14a

    Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


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    PDF MRF372 MRF372R3 MRF372R5 MRF372 marking c14a RO3010 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001

    part marking information vishay HD 1

    Abstract: l1a marking MRF372R5
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372 MRF372R3 MRF372R5 MRF372 part marking information vishay HD 1 l1a marking MRF372R5

    R10B

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372 MRF372R5 R10B

    R4A marking

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this


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    PDF MRF372 MRF372R5 R4A marking

    marking c14a

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of


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    PDF MRF372 MRF372R3 MRF372R5 MRF372R3 marking c14a

    R16A3

    Abstract: R18A2 r9a3 R18A1 R18A3 C38A r17a R16A1 thermaflo yageo RC0603FR-0710KL
    Text: IRDC3622D USER GUIDE FOR DUAL OUTPUT IRDC3622D EVALUATION BOARD USING IRF6622 AND IRF6629 DIRECTFET MOSFETS Table of Contents Page 1 Description www.irf.com Board Features 1 Connections & Operating Instructions 2 Layout 5 Schematic 10 Bill of Materials 11


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    PDF IRDC3622D IRDC3622D IRF6622 IRF6629 RD-0621 IR3622 R16A3 R18A2 r9a3 R18A1 R18A3 C38A r17a R16A1 thermaflo yageo RC0603FR-0710KL

    C10A series

    Abstract: GFM 15A 2N1777A solid state c10a RECTIFIER
    Text: SCR CIO SERIES 2N1770A-2N1777A CIO Series 2N1770A-2N1777A Silicon Controlled Rectifier is a reverse blocking triode thyristor semiconductor for use in low power switching and phase control applications requiring blocking voltages up to 400 volts, and RMS load


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    PDF 2N1770A-2N1777A 2N1770A-2N1777A) 2N1770A) C10A series GFM 15A 2N1777A solid state c10a RECTIFIER

    2n2619

    Abstract: No abstract text available
    Text: jG/nitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JE D E C 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N1770-78 2N2619 2N1600A2N1604A - - 2N1842-50 - 25-400 25-600 25-600


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    PDF C220-2 2N1770-78 2N2619 2N1600A2N1604A 2N1842-50 2N1770A 2N1846 2N1847 2N1603 C126C 2n2619

    SCR C220D

    Abstract: scr C10 C220B C220D C126M C15U C123 SCR 2n1602 c220f C220E
    Text: jemitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont’d PHASE CONTROL SCR’s TYPE JEOEC 7.4 TO 25 AMPERES C10 C11 C15 C220-2 C126 C36 C37 2N1770A 77A 2N 1770-78 2N2619 2N 1600A2N1604A - - 2N 1842-50 - 25*400 25-600 25-600


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    PDF 2N1770A 2N2619 1600A2N1604A C220-2 1N1770 2N1771 2N1772 2N1773 2N1774 2N1775 SCR C220D scr C10 C220B C220D C126M C15U C123 SCR 2n1602 c220f C220E

    SCR GE C20F

    Abstract: scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B
    Text: PHASE CONTROL SCR’s MEDIUM CURRENT 7.5 TO 25 AMPERES CIO GE TYPE CM 2N1770A-77A* 2N1770-78 JED EC C36 C31 -33 C l 22 — — — 2N1842-50 — — — C20-22 C3Q-32 C37 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE 25-400 25-600 25-600


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    PDF C20-22 C30-32 C31-33 2N1770A-77A* 2N1770-78 2N1842-50 2n1847 2N1776A 2N1776 2n1848 SCR GE C20F scr C20F scr c20d ge c30b GE C20F GE C20B GE scr C20f GE SCR c20b GE C1220 scr GE C33B

    SCR Applications Handbook

    Abstract: SCR Handbook 2N1770A-2N1777A 2N1777A 2N1771A 2N1772A 2N1773A C10A scr 2N1770A C10A
    Text: POWEREX INC B'ÎE I> • THTMbBl D0DS310 b H P R X cío r -*s -iz 2 N 17 7 0 A -2 N 1 7 7 7 A Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 P flS S B


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    PDF 2N1770A-2N1777A BP107 Amperes/25-400 GS31S 2N1770A-2N1777A SCR Applications Handbook SCR Handbook 2N1777A 2N1771A 2N1772A 2N1773A C10A scr 2N1770A C10A

    TY 1016 scr

    Abstract: thyristor prxt
    Text: POWEREX INC B'ÎE I> • THTMbBl D0DS310 b H P R X c í o r - * s - i z 2 N 17 7 0 A -2 N 1 7 7 7 A Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14


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    PDF D0DS310 BP107 Amperes/25-400 MAX/10 TY 1016 scr thyristor prxt

    SCR GE C20F

    Abstract: scr c20d GE C20B GE C1220 scr GE scr C20f GE C33B C20D C32H GE SCR c20b scr C20F
    Text: PH ASE C O N T R O L SCR’ s M EDIUM C U R R E N T 7.5 TO 25 A M P E R E S CIO G E T YPE CM 2N1770A-77A* 2N1770-78 JED EC C3Q-32 C37 Cl 22 — — — 2N1842-50 — — — C20-22 C36 C31 -33 C15 E L E C T R IC A L S P E C IF IC A T IO N S V O LTA G E RANGE


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    PDF C20-22 C30-32 C31-33 2N1770A-77A* 2N1770-78 2N1842-50 Z4XL12 Z4XL14 Z4XL16 Z4XL18 SCR GE C20F scr c20d GE C20B GE C1220 scr GE scr C20f GE C33B C20D C32H GE SCR c20b scr C20F

    diode t25 4 L8

    Abstract: diode t25 4 HO
    Text: MITSUBISHI TRANSISTOR M O D U LES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE • Ic • Vcex Collector current.15A Coliector-emitter voltage.1000V • hFE DC current gain . 75 • Insulated Type


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    PDF QM15TB-2H E80276 E80271 diode t25 4 L8 diode t25 4 HO