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MSC81111 Abstract: S010 Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010	Original	PDF	MSC81111 MSC81111 S010
MSC81111 Abstract: S010 v5052 Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010	Original	PDF	MSC81111 MSC81111 S010 v5052
MSC81005 Abstract: No abstract text available Text: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC  PACKAGE P OUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016	Original	PDF	MSC81005 MSC81005
MSC81005 Abstract: No abstract text available Text: MSC81005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .230 2L STUD S016	Original	PDF	MSC81005 MSC81005
MSC81111 Abstract: S010 C127318A Text: MSC81111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC PACKAGE POUT = 5.0 W MIN. WITH 10 dB GAIN @ 1 GHz .250 2LFL S010	Original	PDF	MSC81111 MSC81111 S010 C127318A