ATC-C3000-380
Abstract: No abstract text available
Text: Лазерные диоды модели ATC-C3000-380 Отличительные особенности Области применения • • • • • • • • • • • Выходная мощность 3 Вт в непрерывном режиме
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ATC-C3000-380
ATC-C3000-380
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ATC-C3000-380
Abstract: microlens 808 nm 1000 mw laser crystal UR Series 808 nm 1000 mw laser diode
Text: 3,0 W CW Laser Diode Model ATC-C3000-380 Key features Applications 1. 3.0 W CW output power 2. 380 mm emitting aperture 3. High efficiency MOCVD InAlGaAs quantum well design 4. High reliability 5. Open heat sink, c-mount and ATC packages 1. 2. 3. 4. 5. 6.
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ATC-C3000-380
ATC-C3000-380
microlens
808 nm 1000 mw
laser crystal
UR Series
808 nm 1000 mw laser diode
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2 Wavelength Laser Diode
Abstract: ATC-C3000-380 laser diode for free space communication POWER3
Text: 3,0 W CW Laser Diode Model ATC-C3000-380 Key features Applications • • • • • • • • • • • 3.0 W CW output power 380 µm emitting aperture High efficiency MOCVD InAlGaAs quantum well design High reliability C-mount and ATC packages Solid-state laser pumping
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ATC-C3000-380
2 Wavelength Laser Diode
ATC-C3000-380
laser diode for free space communication
POWER3
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Untitled
Abstract: No abstract text available
Text: BATTERY SPECIFICATIONS HYMP-C3000N Specifications Nominal voltage Diameter Height Weight Internal impedance at 1000Hz. Standard Charge Quick Max. Trickle Min. Ambient temperature Standard Charge Quick Discharge Storage 0.5 Nominal Typical 0.2C 1C 3000 2700
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HYMP-C3000N
1000Hz.
646oz)
300mA
15hrs.
3000mA
150mA
100mA
122oF
113oF
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C3000
Abstract: 1e61 C3316 C3326
Text: OTHER SMC C3000 CARBON CHIP TRIMMER POTENTIOMETER SPEER ELECTRONICS, INC. FEATURES - Environmental Characteristics are Improved With Special Carbon Paste - Miniature Size 3.2mm X 3.6mm DIMENSIONS mm ● C3316 Top Side Adjustable Type 3.2 RECOMMENDED PAD
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C3000
C3316
C3316
C3326
20mN/m
C3000
1e61
C3326
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HYMS-C3000N
Abstract: No abstract text available
Text: BATTERY SPECIFICATIONS HYMS-C3000N Specifications Nominal voltage Diameter Height Weight Internal impedance at 1000Hz. Standard Charge Quick Max. Trickle Min. Ambient temperature Standard Charge Quick Discharge Storage 0.5 Nominal Typical 0.2C 1C 3000 2700
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HYMS-C3000N
1000Hz.
646oz)
300mA
15hrs.
3000mA
150mA
100mA
122oF
113oF
HYMS-C3000N
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Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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Am29LV2562M
S29GL512N
S29GL512N
SA452
SA336
SA424
120R
SA487
EE8000
a78000a7ffff
c58000c5ffff
SA4871
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29W128FH
M29W128FL
Words/16
TSOP56
32-Word
64-Bytes)
M29W128FL
Memory Protection Devices
M29W128FH
JESD97
M29W128F
TSOP56
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transistor C9012
Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Text: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 QuvyvÃTr vpqp
The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.
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GTV1000
AN98051
GTV1000
TDA884X
C9029
220uF
C6004
transistor C9012
transistor c9018
dc05 7 segments
TDA7075AQ
UV1315
tda8842 circuit diagram
transistor c9014
c9015 transistor
c9018 transistor
transistor C9015
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FL128P
Abstract: SPANSION FL128P
Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S25FL128P
104-MHz
S25FL128P
FL128P
SPANSION FL128P
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samsung electronics ba41
Abstract: BA175
Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8C56
256Mb
A0-A23
000000FH
000001FH
000002FH
0000000H
samsung electronics ba41
BA175
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MC789P
Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series
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C300/M
1000/M
MC660
C500/M
C2100/M
C2000
C3000
930/M
C200/M
C900/M
MC789P
MC946F/MC789P
l9945
mc2100 els
MC1110G
mc787p
MC879P
SG4002
MC779P
MC892P
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DG242V-5
Abstract: DG242V-10
Text: A DEGSON ¡a . « t e . * - Sa Mi ^ 3 DEGSON ELECTRONICS CO., LTD. «• m cW»s C€ a % n « K#? t f M # «síH.tets PA66. UL94V-0 «SSR * * * ^ % n 1 ï IË 300V 15A 20m Q 5000M Q /DC 1000V A C3000V/1 Min 2 8 -1 2AW G 2 .5 m m 2 s ä fe s S tó p p a D G 242V -5.0
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DG242V-5
DG242V-7
DG242V-10
UL94V-0
5000M
AC3000V/1
28-12AWG
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D1111
Abstract: D879 c3792 d734 c3779 B1229 A1246 C3069 B1395 C3068
Text: SAf/YO N P \ VCB0 1 0 1 2 15 16 2 0 2 5 4 0 T ype T r a n s i s to r s 5 0 6 0 ♦¡Darlington 8 0 100 1 2 0 1 6 0 1 8 0 3 00 4 0 0 ‘c V mA 10 K1961 K222 30 K223 C3000 C3777 50 A1016 A1016K A1437 C2362K C2857 A1689 C4449 C2362 C3495 70 C5230 C3778 C3776
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K1961
C3000
C3777
A1016
A1437
C2362
C3495
A1016K
C2362K
C2857
D1111
D879
c3792
d734
c3779
B1229
A1246
C3069
B1395
C3068
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RH1034-1.2
Abstract: 301215
Text: use LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS u s c J -X SERIES 85°C Miniaturized, Snap-in Terminal Type ♦¡t# FEATURES & • 85°C3000B# Pslnp o Load Life : 85°C 3000 hours. • ix & iftr o U S R v ' S ' J 7 ” VU' to Smaller size with higher ripple current endurance than USR series.
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C3000B#
-----h85
120Hz)
/120H
250WV
RH1034-1.2
301215
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Z55 - A45
Abstract: code A55 ift 22x
Text: MXY LARGE CAN T Y P E A L U M IN U M E L E C T R O L Y T IC C APAC ITO RS M X Y > 'J - x SERIES Low Profile with Horizontal Mounting • i# Jl FEATURES • 105°C3000fl#ra. Load Life : 105°C 3000 hours with horizontal mounting. • JFi^bI— D 55i o Suitable for flat equipment design.
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C3000fl
120Hz)
2000hours.
18Ap-p/10~
100kHz
Z55 - A45
code A55
ift 22x
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Xilinx XC3090A
Abstract: crystal KDS 4m his 3020a
Text: C3000 Series Field Programmable Gate Arrays C3000A/L, XC31OOA/L O lL IN X Novem ber 9, 1998 (Version 3.1) Product Description Features • • • • • • • • C om plete line of four related Field Program m able Gate A rray product fam ilies
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XC3000
XC3000A/L,
XC31OOA/L)
XC3000A,
XC3000L,
XC3100A,
XC3100L
XC3142L
XC3190L
XC3020A
Xilinx XC3090A
crystal KDS 4m
his 3020a
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Untitled
Abstract: No abstract text available
Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer
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MB62XXXX
MB60XXXX
FPT-160PM01)
40-LEAD
DIP-40P-M01)
54JTYP
40006S-1C
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A81DC
Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF
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ANE408/D
DSP56000/1
ANE408
ANE008)
DSP56000/1
300-3400hz
A81DC
a21dc
a51dc
SG 2368
FE8800
ED8000
E78000
FA6400
0110FFFF
e7040
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