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    CA3127 Search Results

    CA3127 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    CA3127MZ Rochester Electronics CA3127 - Transistor Array Visit Rochester Electronics Buy
    SF Impression Pixel

    CA3127 Price and Stock

    Fairview Microwave Inc FMCA3127-36

    COAX CBL N-TYPE TO N-TYPE
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    DigiKey FMCA3127-36 Bag 1
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    Newark FMCA3127-36 Bulk 3 1
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    L-com Inc LCCA31277-FT3

    COAX CBL SMA TO MCX
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    L-com Inc LCCA31277-FT2

    COAX CBL SMA TO MCX
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    L-com Inc LCCA31271-FT2

    COAX CBL MCX TO MCX
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    DigiKey LCCA31271-FT2 Bulk 1
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    L-com Inc LCCA31278-FT5

    COAX CBL SMA TO MCX
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    CA3127 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CA3127 Harris Semiconductor Original PDF
    CA3127 Harris Semiconductor Original PDF
    CA3127 Intersil High Frequency NPN Transistor Array Original PDF
    CA3127 RCA Solid State Linear Integrated Circuits 1970s Scan PDF
    CA3127E Harris Semiconductor High Frequency NPN Transistor Array Original PDF
    CA3127E Intersil High Frequency NPN Transistor Array Original PDF
    CA3127E Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-PDIP Original PDF
    CA3127E General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
    CA3127E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    CA3127E Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    CA3127E RCA Solid State Linear Integrated Circuits 1970s Scan PDF
    CA3127EX Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    CA3127F General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
    CA3127H General Electric High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. Scan PDF
    CA3127M Intersil High Frequency NPN Transistor Array Original PDF
    CA3127M Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original PDF
    CA3127M Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    CA3127M96 Intersil High Frequency NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC Original PDF
    CA3127M96 Intersil High Frequency NPN Transistor Array Original PDF
    CA3127M96 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    CA3127 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CA3046 bjt

    Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CA3086 100mV CA3046 bjt CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 Harris CA3086 CA3046 NPN 0138E

    z144

    Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
    Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. z144 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22

    CA3127

    Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
    Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		PDF CA3227 A3127 CA3127, CA3227 FN1345 CA3127 CA3227M CA3227M96 TB379 610E 800E

    z144

    Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
    Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127 500MHz. 200MHz z144 zener Diode B22 1021-P1 cascode transistor array CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22

    HP-343A

    Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
    Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    Original     		PDF CA3127 CA3127* CA3127 500MHz. 100MHz 1021-P1 100MHz HP343A HP-343A HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127F

    ccb transistor

    Abstract: TRANSISTOR 100MHz
    Text: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a


    Original     		PDF CA3127 FN662 CA3127 500MHz. 30dBtersil ccb transistor TRANSISTOR 100MHz

    z144

    Abstract: HP342A CA3127 CA3127M CA3127MZ
    Text: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a


    Original     		PDF CA3127 FN662 CA3127 500MHz. z144 HP342A CA3127M CA3127MZ

    CA3046 bjt

    Abstract: CA3086 CA3046 spice CA3086 spice CA3046 Pspice ca3086 CA3046 NPN 333E CA3127 MM9701
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models TM Application Note tle 97 30 08 12 anr y E - June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CH-1009 CA3046 bjt CA3086 CA3046 spice CA3086 spice CA3046 Pspice ca3086 CA3046 NPN 333E MM9701

    CA3127EX

    Abstract: No abstract text available
    Text: CA3127EX Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF CA3127EX

    Untitled

    Abstract: No abstract text available
    Text: CA3127E Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF CA3127E

    Untitled

    Abstract: No abstract text available
    Text: CA3127M Transistors Independent Transistor Array Military/High-RelN Number of Devices5 Type NPN/PNP V(BR)CEO (V)15 V(BR)CBO (V) I(C) Max. (A)20m P(D) Max. (W)425m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF CA3127M

    CA3046 bjt

    Abstract: CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E CA3127 npn tr array CA3086 APPLICATION NOTE
    Text: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.


    Original     		PDF CA3046, CA3086, CA3127 MM9701 CA3046 bjt CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E npn tr array CA3086 APPLICATION NOTE

    Harris CA3046

    Abstract: CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice CA3086 Application of the CA3086 CA3127 MM9701
    Text: Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 Transistor Array SPICE Models Author: Rob Adams Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,


    Original     		PDF MM9701 CA3046, CA3086, CA3127 CA3127 CA3086 100mV Harris CA3046 CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice Application of the CA3086 MM9701

    chip die npn transistor

    Abstract: quad hf npn transistors
    Text: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


    Original     		PDF A3127 CA3127, CA3227 FN1345 CA3227 PUB95 MO-220 chip die npn transistor quad hf npn transistors

    transistor 3609

    Abstract: SL3127 CA3127 DS3628 SL3227 plessey SL3127 IC GEC SL322
    Text: DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fT of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127


    Original     		PDF DS3628 SL3227 SL3227 CA3127 SL3127. transistor 3609 SL3127 CA3127 plessey SL3127 IC GEC SL322

    RCA-CA3127

    Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
    Text: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz


    OCR Scan     		PDF DQ14t43 CA3127 RCA-CA3127* CA3127 100-MHz RCA-CA3127 rca 0190 transistor iY22 rca 0190 6 "transistor arrays" ic currentmirror

    Untitled

    Abstract: No abstract text available
    Text: Arrays ffl H A R R IS S E M I C O N D U C T O R RCA GE CA3127 INTERSIL May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s : A pplications: G am -b an d w id th p ro d u c t f j > 1 GHz


    OCR Scan     		PDF CA3127 100-MHz

    CA3127

    Abstract: TRANSISTOR 100MHz zener y21 CA3127E
    Text: d ì CÌLJ CA3127 h -L A J R F R IS S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN


    OCR Scan     		PDF CA3127 CA3127 500MHz. TRANSISTOR 100MHz zener y21 CA3127E

    Untitled

    Abstract: No abstract text available
    Text: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


    OCR Scan     		PDF CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz

    CA3127E

    Abstract: No abstract text available
    Text: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    OCR Scan     		PDF CA3127 CA3127 500MHz. CA3127E

    Untitled

    Abstract: No abstract text available
    Text: £} HARRIS C A 3 1 2 7 High-Frequency N-P-N Transistor Array August 1991 F e a tu re s D e s c rip tio n • G a in -B a n d w id th P ro d u ct f y . > 1 G H z The CA3127* consists of five general-purpose silicon n -p -n transistors on a common monolithic substrate. Each


    OCR Scan     		PDF CA3127* CA3127 500MHz. CA3127 100-M

    100MHZ NPN TRANSISTORS

    Abstract: transistor 6623 CA3127 M16.15 Package low noise transistors rf 3127
    Text: FHH A R R IS \CA3127 SEMICONDUCTOR 4 ', l i \ A tV. High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT .>1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the


    OCR Scan     		PDF \CA3127 CA3127 500MHz. CA3127E CA3127M CA3127M96 CA3127 100MHZ NPN TRANSISTORS transistor 6623 M16.15 Package low noise transistors rf 3127

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:


    OCR Scan     		PDF 0014b43 CA3127 CA-CA3127* CA3127 100-MHz

    SL3127C

    Abstract: plessey SL3127 SL3127
    Text: GEC PLESSEY S EMI CONDS 43E D Bi 37bflS22 0G1347D 1 MPLSB GEC PLESSEY [ S E M I C O N D U C T O rT ] SL3127 HIGH FREQUENCY NPN TRANSISTOR ARRAY The SL3127C is a monolithic array of five high frequency low current NPN transistors in a 16 lead DIL package. The


    OCR Scan     		PDF 37bflS22 0G1347D SL3127 SL3127C CA3127 plessey SL3127 SL3127