100 watt transistor
Abstract: Bt 35 transistor CASE OUTLINE 55 BT- Style 1 Transistor 2301
Text: 2301 1.5 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The
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CASE OUTLINE 55 BT- Style 1
Abstract: 2 watt rf transistor 2302 transistor
Text: 2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor
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CASE OUTLINE 55 BT- Style 1
Abstract: No abstract text available
Text: 2307 7.0 Watts - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE 55 BT- Style 1 The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor
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HC49-3L
Abstract: HC49
Text: HC49 CRYSTALS Outline mm - HC49 & HC49-3L ISSUE 13; 1 NOVEMBER 2008 - RoHS 2002/95/EC Holder Style 10.2 10.2 ▪▪ Holder HC49-T has a truncated height of 11.1mm max ▪▪ Load Capacitance (CL): 10pF to 75pF or Series ▪▪ Drive Level: 1mW max. ▪▪ Static Capacitance (C0): 7pF max.
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HC49-3L
2002/95/EC
HC49-T
100ppm
50ppm
HC49-3L
HC49
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Untitled
Abstract: No abstract text available
Text: MASW-009276-000DIE Bumped GaAs SP3T Switch for WLAN 1.0 - 4.0 GHz Features M/A-COM Products Rev. V1 Die Bump Pad Layout bump side up • 802.11b/g and Bluetooth Applications • Low Insertion Loss: 0.5 dB 2.4 GHz to 2.5 GHz band • High Isolation: 32 dB Typical on RX
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MASW-009276-000DIE
11b/g
MASW-009276-000DIE
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Untitled
Abstract: No abstract text available
Text: MASW-009276-001DIE Bumped GaAs SP3T Switch for WLAN 1.0 - 4.0 GHz Features Rev. V2 Die Bump Pad Layout bump side up • 802.11b/g and Bluetooth Applications • Low Insertion Loss: 0.5 dB 2.4 GHz to 2.5 GHz band • High Isolation: 32 dB Typical on RX • Low Harmonics: <-70 dBc @ 20 dBm
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MASW-009276-001DIE
11b/g
MASW-009276-001DIE
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26N50Q
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q-Class VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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O-247
O-268
26N50Q
26N50Q
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HC49 Crystals
Abstract: No abstract text available
Text: HC49 Crystals ISSUE 9; 7 SEPTEMBER 1999 Outline in mm - HC49 & HC49-3L 10.2 Delivery Options • Common frequencies maybe available from stock ■ Express Manufacturing Service available, subject to piece part stock availability 13.46 max Holder Style ■
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HC49-3L
100ppm
10ppm
HC49 Crystals
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HC49 Crystals
Abstract: No abstract text available
Text: HC49 Crystals ISSUE 10; 10 APRIL 2002 Outline in mm - HC49 & HC49-3L 1 0 .2 Delivery Options • Common frequencies maybe available from stock ■ Express Manufacturing Service available, subject to piece part stock availability 1 3 .4 6 m a x Holder Style
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HC49-3L
100ppm
10ppm
HC49 Crystals
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32n50
Abstract: 30N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings VDSS VDGR TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30
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30N50
32N50
O-247
O-268
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Untitled
Abstract: No abstract text available
Text: HC49/4H CRYSTALS 4.0 max Holder Style ▪▪ Resistance welded, hermetically sealed in an inert atmosphere with glass to metal seals securing the lead wires ▪▪ Load Capacitance CL : 10pF to 75pF or Series ▪▪ Drive Level: 500µW max. ▪▪ Static Capacitance (C0): 7pF max.
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HC49/4H
10ppm,
20ppm,
30ppm,
50ppm,
120ppm
25ppm
50ppm
100ppm
70ppm
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS on Q-Class = 800 V = 15 A = 0.60 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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15N80Q
15N80Q
O-268
O-247
Figure10.
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100PPM
Abstract: No abstract text available
Text: HC49/4H Crystals Outline in mm - HC49/4H & HC49/4H-3L ISSUE 9; 18 OCTOBER 1999 Delivery Options Common frequencies maybe available from stock • Lower height holders available please contact sales office 12.7 min ∅0.45 Holder Style ■ 12.7 min ∅0.45
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HC49/4H
HC49/4H
HC49/4H-3L
50ppm
50ppm
100ppm
100PPM
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Untitled
Abstract: No abstract text available
Text: MASW-008902-000DIE Bumped GaAs SP3T Switch for WLAN 2.4 - 2.5 GHz M/A-COM Products Rev. V2 Die Bumping Pad Layout bump side up Features • 802.11b/g and Bluetooth Applications • Insertion Loss: 0.60 dB typical • Isolation: 31.5 dB typical (RX Path)
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MASW-008902-000DIE
11b/g
MASW-008902-000DIE
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Untitled
Abstract: No abstract text available
Text: HC49/4H Crystals Outline in mm - HC49/4H & HC49/4H-3L ISSUE 10; 10 APRIL 2002 Delivery Options Common frequencies maybe available from stock • Lower height holders available please contact sales office 1 2 .7 m in Æ 0 .4 5 = = 4 .8 8 HC49/4H crystals are resistance welded, hermetically
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HC49/4H
HC49/4H
HC49/4H-3L
50ppm
50ppm
100ppm
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CW1311
Abstract: 431a 012 4 CONDUCTOR 3.5mm jack heat staking audio jack 3.5mm surface mounted idc 14 pin out 3,5 mm jack socket 6 pins B431A TELEPHONE SOCKET CONNECTION DIAGRAM BT 631A
Text: Issued November 1995 020-616 Data Pack A Data Sheet Many other products are also available approved to BABT in the Telecommunications Section. The comprehensive range of RS connectors and accessories is suitable for the connection of flexible cordage to a wide
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D2902,
D2931
CW1311.
CW1311
431a 012
4 CONDUCTOR 3.5mm jack
heat staking
audio jack 3.5mm surface mounted
idc 14 pin out
3,5 mm jack socket 6 pins
B431A
TELEPHONE SOCKET CONNECTION DIAGRAM
BT 631A
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Untitled
Abstract: No abstract text available
Text: HC49/4H Crystals Outline in mm - HC49/4H & HC49/4H-3L ISSUE 10; 10 APRIL 2002 Delivery Options Common frequencies maybe available from stock • Lower height holders available please contact sales office 1 2 .7 m in Æ 0 .4 5 = = 4 .8 8 HC49/4H crystals are resistance welded, hermetically
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HC49/4H
HC49/4H
HC49/4H-3L
100ppm
10ppm
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CW1311
Abstract: 4701-28 4 CONDUCTOR 3.5mm PLUG Secondary protection for DSL lines audio jack 3.5mm surface mounted telephone handset cords 3,5 mm jack socket 6 pins B431A 631A 470128
Text: Issued March 1997 232-5610 Data Pack A Data Sheet Many other products are also available approved to BABT in the Telecommunications Section. The comprehensive range of RS connectors and accessories is suitable for the connection of flexible cordage to a wide
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D2902,
D2931
CW1311.
CW1311
4701-28
4 CONDUCTOR 3.5mm PLUG
Secondary protection for DSL lines
audio jack 3.5mm surface mounted
telephone handset cords
3,5 mm jack socket 6 pins
B431A
631A
470128
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Intel reflow soldering profile BGA
Abstract: A5832 JEDEC bga 63 tray Intel BGA cte table epoxy substrate BGA PROFILING A4470-01 Lead Free reflow soldering profile BGA land pattern BGA 196 a5764
Text: Ball Grid Array BGA Packaging 14.1 14 Introduction The plastic ball grid array (PBGA) has become one of the most popular packaging alternatives for high I/O devices in the industry. Its advantages over other high leadcount (greater than ~208 leads) packages are many. Having no leads to bend, the PBGA has greatly reduced coplanarity problems
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Untitled
Abstract: No abstract text available
Text: MASW-008902-000DIE Bumped GaAs SP3T Switch for WLAN 2.4 - 2.5 GHz M/A-COM Products Rev. V3 Die Bump Pad Layout bump side up Features • 802.11b/g and Bluetooth Applications • Insertion Loss: 0.60 dB typical • Isolation: 31 dB typical (RX Path) 22 dB typical (TX / BT paths)
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MASW-008902-000DIE
11b/g
MASW-008902-000DIE
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CASE OUTLINE 55 BT- Style 1
Abstract: No abstract text available
Text: 2304 4.0 Watts - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION CASE OUTLINE The 2304 is a COMMON BASE transistor capable of providing 4 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor
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Equator BSP-15
Abstract: itu 656 converter DRGB 001 A Equator Technologies stingray bsp15300 BSP-15 PAL to ITU-R BT.601/656 Decoder sad transistor A11b equator VLIW architecture
Text: Datasheet BSP-15 Processor Datasheet Equator Technologies, Inc. Revision E April 17, 2002 Document Number: HWR.BSP15.DS.REV.E Datasheet BSP-15 Processor Datasheet Revision E April 17, 2002 Copyright 2002 Equator Technologies, Inc. All rights reserved. Equator makes no warranty for the use of its products, assumes no responsibility for any errors
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BSP-15
BSP15
128-bit
Equator BSP-15
itu 656 converter
DRGB 001 A
Equator Technologies
stingray
bsp15300
PAL to ITU-R BT.601/656 Decoder
sad transistor A11b
equator VLIW architecture
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86CNQ200
Abstract: No abstract text available
Text: bSE 1> INTERNATIONAL RECTIFIER 4Ö5545B QGl?bT 3?b PD-2.348 International e !Rectifier 86CNQ200 SCHOTTKY RECTIFIER 80 Amp Major Ratings and Characteristics Characteristics Description/Features 86CNQ200 Units The 86CNQ200, center tap Schottky rectifier module has
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5545B
86CNQ200
86CNQ200,
D-6380
86CNQ200
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Aerovox RBPS
Abstract: Aerovox energy discharge
Text: IGBT Snubber Capacitors for Power Electronics from AOfOVOX Group an ISO 9002 Company • Low inductance to 12 nanoHenries •HighDV/DT • Low ESR • Low loss polypropylene dielectric • UL 94 V -0 flame retardant case and resin • Terminals Direct mount to IGBT
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