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    CAY SMD MARKING CODE Search Results

    CAY SMD MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    CAY SMD MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hyb39s16

    Abstract: marking smd wmf CAY smd marking code
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 hyb39s16 marking smd wmf CAY smd marking code

    P-TSOPII-44

    Abstract: CAZ MARKING AZ2 marking
    Text: HYB39S16400/800/160BT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM Advanced Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 13.3 ns tAC2 6 8 ns • Fully Synchronous to Positive Clock Edge •


    Original     		PDF HYB39S16400/800/160BT-8/-10 16MBit P-TSOPI-44 400mil PC100 P-TSOPII-44 CAZ MARKING AZ2 marking

    smd CA-Y

    Abstract: P-TSOPII-54 smd CAY
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S128400/800/160CT 128-MBit SPT03933 smd CA-Y P-TSOPII-54 smd CAY

    Untitled

    Abstract: No abstract text available
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit P-TSOPII-54 400mil PC133 PC100 SPT03933

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3

    CAY smd marking code

    Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
    Text: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		PDF 39S256400/800/160T cycles/64 P-TSOPII-54 400mil SPT03933 CAY smd marking code smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 PC100-222-620 PC100-323-620

    39S16802AT-10

    Abstract: Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit 39S16802AT-10 Q67100-Q1279 marking t8 smd CAY Q67100-Q1323 Q67100-Q1327 Q67100-Q1333 Q67100-Q1335 P-TSOPII-44 BX-4T

    cbx smd code

    Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit BanT14 SPT03933 HYB39S64400/800/160CT 64MBit cbx smd code SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22

    39S256160T

    Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		PDF 39S256400/800/160T 256-MBit SPT03933 39S256160T PC100-322-620 MARKING AX5 SMD MARKING T20

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09

    P-TSOPII-54

    Abstract: Q67100-Q1838 Q67100-Q2781
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 P-TSOPII-54 Q67100-Q1838 Q67100-Q2781

    39S64160BT-8

    Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 39S64160BT-8 SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		PDF 39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15

    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


    Original     		PDF 39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design

    marking code EY SMD

    Abstract: PC100-222-620 P-TSOPII-54
    Text: HYB39L256160AC/T 256MBit 3.3V Mobile-RAM 256 MBit Synchronous Low-Power DRAM Data Sheet Revision Dec. 2002 • Automatic and Controlled Precharge Command Features -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page tCK3,MIN


    Original     		PDF HYB39L256160AC/T 256MBit 16Mbit P-TFBGA-54, PC133 SPT03919-3 marking code EY SMD PC100-222-620 P-TSOPII-54

    smd marking T22

    Abstract: smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design 128-MBIT
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: -7 -7.5 -8 Units • Automatic and Controlled Precharge Command fCK 143 133 125 MHz • Data Mask for Read/Write Control (x4, x8)


    Original     		PDF 39S128400/800/160CT 128-MBit smd marking T22 smd transistor marking ba 128M-BIT P-TSOPII-54 P-TSOP-54 PC133 registered reference design

    SMD marking code ax2

    Abstract: HYB 39S64800AT-8 P-TSOPII-54 39S64800AT-8 39S64160AT-8
    Text: HYB39S6440x/80x/16xAT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -10 Units fCK max. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns • Single Pulsed RAS Interface • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S6440x/80x/16xAT 64MBit P-TSOPII-54 400mil SMD marking code ax2 HYB 39S64800AT-8 39S64800AT-8 39S64160AT-8

    smd marking code bs

    Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
    Text: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160BT 64MBit P-TSOPII-54 400mil PC133 PC100 smd marking code bs TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6

    P-TSOPII-54

    Abstract: 39s64160at-8
    Text: HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160AT 64MBit P-TSOPII-54 400mil PC100 39s64160at-8

    A86 SMD

    Abstract: PC133-333-522 128M-BIT PC100-222-620 128-MBIT
    Text: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 2003-02 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original     		PDF 39L128160AC/T 128-MBit 54-FBGA SPT03933 A86 SMD PC133-333-522 128M-BIT PC100-222-620

    cbx smd code

    Abstract: No abstract text available
    Text: HYB 39L256160AC/T 256-MBit 3.3V Mobile-RAM 256-MBit Synchronous Low-Power DRAM Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original     		PDF 39L256160AC/T 256-MBit 16Mbit SPT03933 cbx smd code

    ISO 2768-mk

    Abstract: PC100-222-620 HYB 39L128160AC-7.5
    Text: HYB 39L128160AC/T 128-MBit 3.3V Mobile-RAM 128-MBit Synchronous Low-Power DRAM Datasheet Rev. 12/01 • Automatic and Controlled Precharge Command High Performance: -7.5 -8 Units fCK,MAX 133 125 MHz • Programmable Burst Length: 1, 2, 4, 8 and full page


    Original     		PDF 39L128160AC/T 128-MBit 54-FBGA SPT03933 ISO 2768-mk PC100-222-620 HYB 39L128160AC-7.5

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB 39S128400/800/160CT L 128-MBit Synchronous DRAM 128-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single Write Operation -7 -7.5 -8 Units fCK 143 133 125 MHz • Automatic and Controlled Precharge Command tCK3 7 7.5 8 ns • Data Mask for Read/Write Control (x4, x8)


    Original     		PDF 39S128400/800/160CT 128-MBit P-TSOPII-54 PC133 registered reference design