Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CB55000 Search Results

    SF Impression Pixel

    CB55000 Price and Stock

    Seiko Epson Corporation SG-8101CB-5.5000M-TBGPA0

    SG-8101CB 5.5000M-TBGPA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-5.5000M-TBGPA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.9228
    • 10000 $1.9228
    Buy Now

    Seiko Epson Corporation SG-8101CB-5.5000M-TCHPA0

    SG-8101CB 5.5000M-TCHPA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-5.5000M-TCHPA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.87456
    • 10000 $1.87456
    Buy Now

    Seiko Epson Corporation SG-8018CB-5.5000M-TJHSA0

    XTAL OSC XO 5.5000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8018CB-5.5000M-TJHSA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.6363
    • 10000 $0.6363
    Buy Now

    Seiko Epson Corporation SG-8101CB-5.5000M-TBGSA0

    SG-8101CB 5.5000M-TBGSA0: OSC MH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8101CB-5.5000M-TBGSA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.87456
    • 10000 $1.87456
    Buy Now

    Seiko Epson Corporation SG-8018CB-5.5000M-TJHPA0

    XTAL OSC XO 5.5000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8018CB-5.5000M-TJHPA0 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.6363
    • 10000 $0.6363
    Buy Now

    CB55000 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CB55000 STMicroelectronics HCMOS7 STANDARD CELLS Original PDF
    CB55000 STMicroelectronics HCMOS7 STANDARD CELLS Original PDF
    CB55000-PLCC28 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PLCC44 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP100 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP128 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP144 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP160 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP64 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-PQFP80 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP100 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP144 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP176 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP44 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP48 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP64 STMicroelectronics HCMOS7 Standard Cell Original PDF
    CB55000-TQFP80 STMicroelectronics HCMOS7 Standard Cell Original PDF

    CB55000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8mm pitch BGA 256 pin 14x14

    Abstract: CB45000 CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10
    Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV


    Original
    CB55000 8mm pitch BGA 256 pin 14x14 CB45000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics of BGA Staggered pins bga 10x10 PDF

    0.25-um CMOS standard cell library inverter

    Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
    Text: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided


    Original
    CB55000 0.25-um CMOS standard cell library inverter CMOS GATE ARRAY stmicroelectronics OLIVETTI PDF

    b55qs

    Abstract: CB45000 ultra fine pitch BGA CB55Q CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics
    Text: CB55000 Series HCMOS7 Standard Cells FEATURE • 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV


    Original
    CB55000 b55qs CB45000 ultra fine pitch BGA CB55Q D950 ST10 ST100 ST20 CMOS GATE ARRAY BGA stmicroelectronics PDF

    0.18-um CMOS technology characteristics

    Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original
    CB65000 85K/mm 30nanoWatt/Gate/MHz/ 0.18-um CMOS technology characteristics CB55000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V PDF

    ST100

    Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
    Text: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.


    Original
    CB65000 85K/mm2, 30nanoWatt/Gate/MHz/Stdload. ST100 CB55000 D950 ST10 ST20 tristate nand gate PDF

    CB55000

    Abstract: CB65000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST
    Text: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low


    Original
    CB65000 85K/mm 30nanoWatt/Gate/MHz/ CB55000 D950 ST10 ST100 ST20 12v na 19.5v 0.18-um CMOS technology characteristics horizontal output section 0.18Um Standard cell ST PDF