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    Untitled

    Abstract: No abstract text available
    Text: Mounting Inserts M3*0.5 Through 4pl. E R I E Typical Derating Curve for CEB75-48S3V3 4 INPUT SPECIFICATIONS: 5 20 Input Voltage – 75V6 1.40 3 35.56 Under voltage lockout …….….


    Original     		PDF CEB75-48S3V3 12Vout. CEB75-48S1V8 CEB75-48S12 1902mA CEB75

    Untitled

    Abstract: No abstract text available
    Text: CEB75 SERIES 62 TO 84 WATT 1/8 BRICK DC-DC CONVERTERS FEATURES * 62 - 84W Isolated Output * Eighth Brick Package * Regulated Outputs * Efficiency up to 92% * 1500VDC Isolation * Input Under Voltage Protection * Over Current Protection * Over Temperature Protection


    Original     		PDF CEB75 1500VDC UL60950-1 CEB75-48S2V5 1463mA CEB75-48S3V3 1528mA CEB75-48S05 1736mA CEB75-48S12

    Untitled

    Abstract: No abstract text available
    Text: 5 DC DC Part Num CEB75 SERIES 30-84 WATT 1/8 BRICK DC-DC CONVERTERS Features: • 30-84W Isolated Output • Eighth Brick Package • Regulated Outputs • Ef ciency to 92% • 1500VDC Isolation • Input Under Voltage Protection • Over Current Protection


    Original     		PDF CEB75 0-84W 1500VDC

    CEP75N06

    Abstract: CEB75N06 260uH
    Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		PDF CEP75N06/CEB75N06 O-220 O-263 CEP75N06 CEB75N06 260uH

    CEP75N06

    Abstract: 4V12 CEB75N06
    Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP75N06/CEB75N06 O-220 O-263 CEP75N06 4V12 CEB75N06

    S3310

    Abstract: CEP75N10 S 3310
    Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP75N10/CEB75N10 O-220 O-263 S3310 CEP75N10 S 3310

    CEP75A3

    Abstract: No abstract text available
    Text: CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP75A3/CEB75A3 O-263 O-220 O-263 O-220 CEP75A3

    5V200

    Abstract: No abstract text available
    Text: RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 [email protected] www.rsg-electronic.de • ■ ■ ■ CEB75 ELECTRONIC COMPONENTS S E Mounting Inserts M3*0.5 Through 4pl. Änderungen vorbehalten / subject to change without notice


    Original     		PDF D-63069 CEB75 CEB75-48S3V3 24ircuit CEB75-48S1V8 CEB75-48S12 1902mA 5V200