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    S3310

    Abstract: CEP75N10 S 3310
    Text: CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS ON = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP75N10/CEB75N10 O-220 O-263 S3310 CEP75N10 S 3310