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    CED02N6G

    Abstract: No abstract text available
    Text: CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.9A, RDS ON = 5.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.


    Original     		CED02N6G/CEU02N6G O-251 O-252 O-251 100ms CED02N6G PDF

    CED02N6G

    Abstract: No abstract text available
    Text: CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS ON = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.


    Original     		CED02N6G/CEU02N6G O-251 O-252 O-251 CED02N6G PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF