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    CED540N

    Abstract: No abstract text available
    Text: CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.


    Original     		CED540N/CEU540N O-251 O-252 O-251 CED540N PDF