CEP01N6
Abstract: No abstract text available
Text: CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP01N6 650V 15Ω 1A 10V CEB01N6 650V 15Ω 1A 10V CEI01N6 650V 15Ω 1A 10V CEF01N6 650V 15Ω 1A e 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
PDF
|
CEP01N6/CEB01N6
CEI01N6/CEF01N6
CEP01N6
CEB01N6
CEI01N6
CEF01N6
O-220
O-263
O-262
O-220F
CEP01N6
|
CEP01N6
Abstract: No abstract text available
Text: CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP01N6 650V 15Ω 1A 10V CEB01N6 650V 15Ω 1A 10V CEI01N6 650V 15Ω 1A 10V CEF01N6 650V 15Ω 1A e 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
PDF
|
CEP01N6/CEB01N6
CEI01N6/CEF01N6
CEP01N6
CEB01N6
CEI01N6
CEF01N6
O-220
O-263
O-262
O-220F
CEP01N6
|
Untitled
Abstract: No abstract text available
Text: CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP01N6G 600V 9.3Ω 1A 10V CEB01N6G 600V 9.3Ω 1A 10V CEF01N6G 600V 9.3Ω 1A d 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
PDF
|
CEP01N6G/CEB01N6G
CEF01N6G
CEP01N6G
CEB01N6G
O-263
O-220
O-220F
O-220/263
100ms
|
ceF01N65
Abstract: 650VVGS
Text: CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON CEP01N65 650V 10.5Ω 1.3A ID @VGS 10V CEB01N65 650V 10.5Ω 1.3A 10V CEF01N65 650V 10.5Ω 1.3A d 10V D Super high dense cell design for extremely low RDS(ON).
|
Original
|
PDF
|
CEP01N65/CEB01N65
CEF01N65
CEP01N65
CEB01N65
O-263
O-220
O-220F
O-220/263
100ms
ceF01N65
650VVGS
|