cep540n
Abstract: No abstract text available
Text: CEP540N/CEB540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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Original
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CEP540N/CEB540N
O-220
O-263
cep540n
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PDF
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CEP540N
Abstract: TF510 cep540
Text: CEP540N/CEB540N CEF540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS ON = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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Original
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CEP540N/CEB540N
CEF540N
O-220
O-263
O-220F
CEP540N
TF510
cep540
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PDF
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